Abstract: A method for depositing a CdTe layer on a substrate in a vacuum chamber by means of physical gas phase deposition is provided. The substrate is heated to a coating temperature before the deposition process and then guided past a vessel in which CdTe is converted into a vapour state, a gaseous component with an increased pressure (compared to the vacuum in the vacuum chamber) flowing through at least one inlet, against the substrate surface to be coated, such that the gaseous component is adsorbed on the substrate surface to be coated before the substrate is guided past the at least one vessel.

Abstract: A method for depositing a CdTe layer on a substrate in a vacuum chamber by means of physical gas phase deposition is provided. The substrate is heated to a coating temperature before the deposition process and then guided past a vessel in which CdTe is converted into a vapour state, a gaseous component with an increased pressure (compared to the vacuum in the vacuum chamber) flowing through at least one inlet, against the substrate surface to be coated, such that the gaseous component is adsorbed on the substrate surface to be coated before the substrate is guided past the at least one vessel.

Abstract: A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.

Abstract: A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.

Abstract: An apparatus for generating a hollow cathode arc discharge plasma, including two plasma sources, each including a hollow cathode and an electrode which is associated with the hollow cathode and which has an opening that extends through the electrode, wherein the hollow cathodes of the two plasma sources are connected to a pulse generator which generates a bipolar, medium-frequency pulsed voltage between the two hollow cathodes. Here, in each of the two plasma sources, the hollow cathode is connected in an electrically conducting manner, directly or with interconnection of at least one current direction limiting component, to the associated electrode.

Abstract: A method for depositing a LiPON coating on a substrate is provided, wherein the vaporization material, which is located in a vessel and which includes at least the chemical elements lithium, phosphorus and oxygen, is vaporized within a vacuum chamber. Here the vaporization material is heated by means of a thermal vaporization apparatus, and simultaneously either a nitrogen-containing component is introduced into the vacuum chamber or a nitrogen-containing material is co-vaporized, and wherein the vapor particle mist rising from the vessel is permeated by a plasma before the deposition on the substrate.

Abstract: An apparatus for generating a hollow cathode arc discharge plasma, including two plasma sources, each including a hollow cathode and an electrode which is associated with the hollow cathode and which has an opening that extends through the electrode, wherein the hollow cathodes of the two plasma sources are connected to a pulse generator which generates a bipolar, medium-frequency pulsed voltage between the two hollow cathodes. Here, in each of the two plasma sources, the hollow cathode is connected in an electrically conducting manner, directly or with interconnection of at least one current direction limiting component, to the associated electrode.

Abstract: A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.

Abstract: Plasma deposition apparatus (1) and method that allows metal or nonmetal vapor (6) to be generated by electron-beam evaporation, guides that vapor using a noble gas stream (containing reactive gases in cases of reactive evaporation), ionizes the dense directed gas and vapor stream at working pressures above about 0.0001 mbar using a hollow cathode plasma arc discharge (11), and conveys the ionized vapor and/or gas stream towards the substrate (4) for impact on the surface at energies varying from thermal levels (as low as about 0.05 eV) up to about 300 eV.

Abstract: Plasma deposition apparatus (1) and method that allows metal or nonmetal vapor (6) to be generated by electron-beam evaporation, guides that vapor using a noble gas stream (containing reactive gases in cases of reactive evaporation), ionizes the dense directed gas and vapor stream at working pressures above about 0.0001 mbar using a hollow cathode plasma arc discharge (11), and conveys the ionized vapor and/or gas stream towards the substrate (4) for impact on the surface at energies varying from thermal levels (as low as about 0.05 eV) up to about 300 eV.

Abstract: Method for producing at least one organically-modified oxide, oxinitride or nitride layer by vacuum coating on a substrate through plasma-enhanced evaporation of evaporation material comprising nitride-forming evaporation material and one of oxide and suboxide evaporation material, wherein the at least one layer is deposited through plasma-enhanced, reactive high-rate evaporation of the evaporation material with use of gaseous monomers and a reactive gas including at least one of oxygen and nitrogen, and wherein the evaporation material, gaseous monomers, and reactive gas pass through a high-density plasma zone immediately in front of the substrate.

Abstract: A process an device for ion-supported vacuum coating.The process and the affiliated device is intended to permit the high-rate ating of large-surfaced, electrically conductive and electrically insulating substrates with electrically insulating and electrically conductive coatings with relatively low expenditure. The substrates are predominantly band-shaped, in particular plastic sheets with widths of over a meter.According to the invention, in an intrinsically known device for vacuum coating, alternating negative and positive voltage pulses are applied to the electrically conductive substrate or in electrically insulating substrates, to an electrode disposed directly behind them, e.g. the cooling roller, relative to the plasma or to an electrode that is disposed almost at plasma potential. The form, the voltage, and the duration of the pulses are adapted to the coating task and the material.The process is used particularly for depositing abrasion protection, corrosion protection, and barrier coatings.

Abstract: It is known that improved coating properties can be obtained by plasma action in vacuum deposition, especially by vaporization. Substantially higher coating rates can be attained in vapor deposition, but, with high plasma densities, they result in excessive scattering of the electron beam and reduce the power density. According to the invention, a plasma source, preferably a hollow cathode are source, is arranged in the immediate vicinity of the substrate. Between the evaporator and the substrate there is a device for generating a magnetic field so that the region of high plasma density is separated from the evaporator and the electron beam by the magnetic field. The boundary field lines of this magnetic field run along an arc curving with respect to the substrate.

Abstract: An electron beam line evaporator for coating heat-sensitive strips or substrates includes a magnetic trap overlying an evaporation crucible to prevent unpermissible heating and static electrification by back-scattered electrons, complemented with means to influence the injection angle of a dynamically deflected electron beam in such a manner that the beam enters the horizontal magnetic field of the trap at the same angle in each deflection phase independent of stray fields. Such means are arranged inside a gap of a pole shoe necessary for the horizontal magnetic field used by the trap and are operative to generate a vertical magnetic field variable in time and locally alongside the pole shoe.

Abstract: Electron-beam (EB) coating of broad strips with improved film quality, and without undue scattering and deflection of the electron beam at long beam paths is accomplished with a shielding mantle, placed between the EB gun and the evaporation crucible, providing vacuum-tight shielding of the beam path from the coating chamber.

Abstract: The present invention is a coating apparatus for temperature-sensitive broad strips or similar substrates. To obtain a high quality of coating, it is necessary to minimize the path of the electron beam (EB) through the vapor cloud, and to keep away backscattered electrons from the evaporating material. According to the invention, this problem is solved by assembling a sector field with a vertical field direction at the deflection system connected with the EB gun, which is followed by a deflection field with a horizontal field direction. The divergent electron beam is guided in lines to the evaporating material by the geometry of the fields.