Abstract: Described are techniques for generating a supply voltage for an SRAM array using power switching logic. The power switching logic can generate the supply voltage using a first supply rail (supplying a higher voltage) during an active state and using a second supply rail (supplying a lower voltage) during a deep retention state. In some examples, a sensing and recovery (SR) unit is provided to sense a decrease in the second voltage, for instance, during the deep retention state. The SR unit can generate an additional voltage that modifies the supply voltage to be higher than the decreased second voltage, thereby reducing droop and/or noise in the second supply rail. The power switching logic, SR unit, and SRAM array can be co-located or distributed across a computer system. For instance, the power switching logic, SR unit, and SRAM array can be embedded within a System on Chip integrated circuit.

Abstract: In some embodiments, a system comprises a static random access memory (SRAM) device and a controller. The SRAM device comprises a bit cell array comprising a plurality of bit cells arranged in a plurality of rows and a plurality of columns, each column operatively coupled to a pair of bit lines, wherein the plurality of columns is arranged as a plurality of column groups each comprising a plurality of local columns. The SRAM device further comprises a plurality of column decoders, each associated with a column group of the plurality of column groups. In some embodiments, the controller may be configured to read the local columns included in the column group by, for a given local column, sensing a voltage difference on a corresponding pair of bit lines, in a rearranged sequential order that is different from a physical sequential order of the plurality of local columns.

Abstract: System on a Chip (SoC) integrated circuits are configured to reduce Static Random-Access Memory (SRAM) power leakage. For example, SoCs configured to reduce SRAM power leakage may form part of an artificial reality system including at least one head mounted display. Power switching logic on the SoC includes a first power gating transistor that supplies a first, higher voltage to an SRAM array when the SRAM array is in an active state, and a third power gating transistor that isolates a second power gating transistor from the first, higher voltage when the SRAM array is in the active state. The second power gating transistor further supplies a second, lower voltage to the SRAM array when the SRAM array is in a deep retention state, such that SRAM power leakage is reduced in the deep retention state.

Abstract: A micro-light emitting diode (micro-LED) display backplane includes a plurality of macro-pixels. Each macro-pixel includes: a contiguous two-dimensional (2-D) array of bitcells storing display data bits for driving a set of micro-LEDs of a 2-D array of micro-LEDs; and drive circuits configured to generate, based on the display data bits stored in the contiguous 2-D array of bitcells, pulse-width modulated (PWM) drive signals for driving the set of micro-LEDs of the 2-D array of micro-LEDs. In one example, the plurality of macro-pixels is grouped into a plurality of sub-arrays, where each sub-array of the plurality of sub-arrays includes a set of macro-pixels and a local periphery circuit next to the set of macro-pixels. The local periphery circuit includes, for example, a buffer, a repeater, a clock gating circuit for gating an input clock signal to the sub-array, and/or a sub-array decoder for selecting the sub-array.

Abstract: An SRAM controller for performing sequential accesses using internal ports that operate concurrently on different rows. Each internal port includes a row address strobe (RAS) timer that generates clock signals controlling the timing of operations during a RAS phase in which word line decoding is performed once for a group of bit cells being accessed. The RAS phase can involve additional conditioning operations, such as precharging of local bits lines associated with the group of bit cells. The RAS phase is followed by an input/output (IO) phase in which individual bit cells are accessed in sequential address order using a column select signal generated by an IO timer. The RAS phase of a first internal port can be at least partially overlapped by the IO phase of a second internal port to hide the RAS latency of the first internal port. The IO timer can be shared among internal ports.

Abstract: In some embodiments, a system comprises a static random access memory (SRAM) device and a controller. The SRAM device comprises a bit cell array comprising a plurality of bit cells arranged in a plurality of rows and a plurality of columns, each column operatively coupled to a pair of bit lines, wherein the plurality of columns is arranged as a plurality of column groups each comprising a plurality of local columns. The SRAM device further comprises a plurality of column decoders, each associated with a column group of the plurality of column groups. In some embodiments, the controller may be configured to read the local columns included in the column group by, for a given local column, sensing a voltage difference on a corresponding pair of bit lines, in a rearranged sequential order that is different from a physical sequential order of the plurality of local columns.

Abstract: In some embodiments, an apparatus comprises: a static random access memory (SRAM) device. The SRAM device may have a bit cell array comprising a plurality of bit cells, the plurality of bit cells arranged in a plurality of rows and a plurality of columns, each column of the plurality of columns operatively coupled to a pair of bit lines. The apparatus may comprise a controller configured to: assert a word line associated with a row; perform a sequence of write operations while the word line remains asserted, each write operation corresponding to a bit cell associated with a different column of the plurality of columns and the row, wherein the word line has an elevated voltage relative to a non-elevated voltage during at least a portion of the sequence of write operations; and de-assert the word line after the sequence of write operations are performed.

Abstract: A display device includes a silicon wafer including digital circuits, a micro-light emitting diode (micro-LED) wafer including an array of micro-LEDs, and an indium-gallium-zinc-oxide (IGZO) layer between the silicon wafer and the micro-LED wafer and including analog circuits. The digital circuits are characterized by a first operating supply voltage and are configured to generate digital control signals based on digital display data of an image frame. The analog circuits are characterized by a second operating supply voltage higher than the first operating supply voltage. The analog circuits includes analog storage devices configured to storing analog signals, and transistors controlled by the digital control signals and the analog signals to generate drive currents for driving the array of micro-LEDs. The digital circuits on the silicon wafer or the analog circuits in the IGZO layer include level-shifting circuits at interfaces between the digital circuits and the analog circuits.

Abstract: A micro-light emitting diode (micro-LED) display backplane includes a plurality of macro-pixels. Each macro-pixel includes: a contiguous two-dimensional (2-D) array of bitcells storing display data bits for driving a set of micro-LEDs of a 2-D array of micro-LEDs; and drive circuits configured to generate, based on the display data bits stored in the contiguous 2-D array of bitcells, pulse-width modulated (PWM) drive signals for driving the set of micro-LEDs of the 2-D array of micro-LEDs. In one example, the plurality of macro-pixels is grouped into a plurality of sub-arrays, where each sub-array of the plurality of sub-arrays includes a set of macro-pixels and a local periphery circuit next to the set of macro-pixels. The local periphery circuit includes, for example, a buffer, a repeater, a clock gating circuit for gating an input clock signal to the sub-array, and/or a sub-array decoder for selecting the sub-array.

Abstract: System on a Chip (SoC) integrated circuits are configured to reduce Static Random-Access Memory (SRAM) power leakage. For example, SoCs configured to reduce SRAM power leakage may form part of an artificial reality system including at least one head mounted display. Power switching logic on the SoC includes a first power gating transistor that supplies a first, higher voltage to an SRAM array when the SRAM array is in an active state, and a third power gating transistor that isolates a second power gating transistor from the first, higher voltage when the SRAM array is in the active state. The second power gating transistor further supplies a second, lower voltage to the SRAM array when the SRAM array is in a deep retention state, such that SRAM power leakage is reduced in the deep retention state.

Abstract: For small, high-resolution, light-emitting diode (LED) displays, such as for a near-eye display in an artificial-reality headset, LEDs are spaced closely together. A backplane can be used to drive an array of LEDs in an LED display. A plurality of interconnects electrically couple the backplane with the array of LEDs. The backplane can have a different coefficient of thermal expansion (CTE) than the array of LEDs. During bonding of the backplane to the array of LEDs, CTE mismatch can cause misalignment of bonding sites. The higher the bonding temperature, the greater the misalignment of bonding sites. Lower temperature bonding, using materials with lower melting or bonding temperatures, can be used to mitigate misalignment during bonding so that interconnects can be more closely spaced, which can allow LEDs to be more closely spaced, to enable a higher-resolution display.

Abstract: For small, high-resolution, light-emitting diode (LED) displays, such as for a near-eye display in an artificial-reality headset, LEDs are spaced closely together. A backplane can be used to drive an array of LEDs in an LED display. A plurality of interconnects electrically couple the backplane with the array of LEDs. The backplane can have a different coefficient of thermal expansion (CTE) than the array of LEDs. During bonding of the backplane to the array of LEDs, CTE mismatch can cause misalignment of bonding sites. The higher the bonding temperature, the greater the misalignment of bonding sites. Lower temperature bonding, using materials with lower melting or bonding temperatures, can be used to mitigate misalignment during bonding so that interconnects can be more closely spaced, which can allow LEDs to be more closely spaced, to enable a higher-resolution display.

Abstract: For small, high-resolution, light-emitting diode (LED) displays, such as for a near-eye display in an artificial-reality headset, LEDs are spaced closely together. A backplane can be used to drive an array of LEDs in an LED display. A plurality of interconnects electrically couple the backplane with the array of LEDs. As spacing between LEDs becomes smaller than interconnect spacing, a thin-film circuit layer can be used to reduce a number or interconnects between the backplane and the array of LEDs, so that interconnect spacing can be larger than LED spacing. This can allow LEDs in the LED display to be more densely arranged while still allowing use of a silicon backplane with drive circuitry to control operation of the LEDs in the LED display.

Abstract: A determination is made that bit errors of a selected data chunk stored in a computer memory are unable to be completely corrected using an initial error correction scheme. A plurality of other data chunks sharing a physical layout structure element of the computer memory with the selected data chunk is analyzed to identify one or more likely bit error locations of the selected data chunk aligned with one or more corresponding bit error locations of a threshold number of the analyzed other data chunks. An attempt is made to correct the bit errors of the selected data chunk based on the identified one or more likely bit error locations of the selected data chunk.

Abstract: A micro-light emitting diode (micro-LED) display backplane includes a plurality of macro-pixels. Each macro-pixel includes: a contiguous two-dimensional (2-D) array of bitcells storing display data bits for driving a set of micro-LEDs of a 2-D array of micro-LEDs; and drive circuits configured to generate, based on the display data bits stored in the contiguous 2-D array of bitcells, pulse-width modulated (PWM) drive signals for driving the set of micro-LEDs of the 2-D array of micro-LEDs. In one example, the plurality of macro-pixels is grouped into a plurality of sub-arrays, where each sub-array of the plurality of sub-arrays includes a set of macro-pixels and a local periphery circuit next to the set of macro-pixels. The local periphery circuit includes, for example, a buffer, a repeater, a clock gating circuit for gating an input clock signal to the sub-array, and/or a sub-array decoder for selecting the sub-array.

Abstract: For small, high-resolution, light-emitting diode (LED) displays, such as for a near-eye display in an artificial-reality headset, LEDs are spaced closely together. A backplane can be used to drive an array of LEDs in an LED display. A plurality of interconnects electrically couple the backplane with the array of LEDs. As spacing between LEDs becomes smaller than interconnect spacing, a thin-film circuit layer can be used to reduce a number or interconnects between the backplane and the array of LEDs, so that interconnect spacing can be larger than LED spacing. This can allow LEDs in the LED display to be more densely arranged while still allowing use of a silicon backplane with drive circuitry to control operation of the LEDs in the LED display.

Abstract: For small, high-resolution, light-emitting diode (LED) displays, such as for a near-eye display in an artificial-reality headset, LEDs are spaced closely together. A backplane can be used to drive an array of LEDs in an LED display. A plurality of interconnects electrically couple the backplane with the array of LEDs. The backplane can have a different coefficient of thermal expansion (CTE) than the array of LEDs. During bonding of the backplane to the array of LEDs, CTE mismatch can cause misalignment of bonding sites. The higher the bonding temperature, the greater the misalignment of bonding sites. Lower temperature bonding, using materials with lower melting or bonding temperatures, can be used to mitigate misalignment during bonding so that interconnects can be more closely spaced, which can allow LEDs to be more closely spaced, to enable a higher-resolution display.

Abstract: A method for building a component for an electrical rotating machine is provided. The method includes providing a powdered magnetic material and an electrically conductive material, positioning these materials within a mold selected to produce the required dimensions in the materials after the application of a hot isostatic pressing (HIP) procedure, and applying at least one HIP procedure to the materials in the mold. Temperatures and pressures of the process are chosen to ensure that the electrically conducting and magnetic portions of the component are bonded without the materials seeping into each other. The method may be employed to build small compact motor systems using motor components formed as described to produce uniform grain structure and consistent magnetic and structural properties in the motor components that are useful in vehicle drive wheels.

Abstract: The present invention provides a method for building a component for an electrical rotating machine and comprises: providing powdered magnetic material; providing electrically conductive material; positioning the powdered magnetic material and the electrically conductive material within a mold functional to provide the materials with the required dimensions after application of a hot isostatic pressing (HIP) procedure; and applying at least one HIP procedure to the materials in the mold. Temperatures and pressures of the process are chosen to ensure that the electrically conducting and magnetic portions of the component are bonded without the materials seeping into each other. In one aspect the present invention thus provides a method for building small compact motor systems using motor components formed from pressed powder. A technical advantage of this approach is that the component has uniform grain structure and thus consistent magnetic and structural properties.

Abstract: A tampon compressed with a compression having a major component in a widthwise direction may have a plurality of creases extending along its length from its surface and penetrating no deeper than about 20% of the width of the tampon. A method for making a tampon may comprise compressing an uncompressed pledget in a compression machine and feeding the compressed pledget with a compression member into a tampon mold having a mold cavity for receiving the compressed pledget, the compressed pledget thickness being no more that about 20% different than the uncompressed pledget thickness and the tampon mold having a mold cavity thickness no more than about 10% different than the thickness of the compressed pledget. An apparatus for making a tampon is also disclosed.