Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic layer. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic layer at a location vertically below the at least one clamp electrode such that a region of the ceramic layer between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the primary RF power delivery electrode at its respective location.

Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. A clamp electrode assembly is positioned within an upper region of the ceramic layer. The clamp electrode assembly serves to clamp the substrate to the top surface of the ceramic layer and functions as a primary radiofrequency (RF) power delivery electrode. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the clamp electrode assembly at its respective location.

Abstract: A baseplate for a temperature controlled substrate support assembly in a vacuum chamber includes a single cavity in an upper surface of the base plate. A cylindrical wall extends upward around an outer perimeter of the base plate to define the cavity. A cover plate arranged on the base plate above the cavity is in thermal contact with the cylindrical wall of the base plate. A plurality of thermoelectric modules is arranged within the cavity in the upper surface of the base plate in thermal contact with the cover plate and the base plate and is sealed from the vacuum chamber and maintained at atmospheric pressure. A plurality of fluid channels is arranged within the base plate below the cavity. A plurality of heat transfer pipes extends downward toward the fluid channels from an upper surface of the base plate within the cavity.

Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic layer. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic layer at a location vertically below the at least one clamp electrode such that a region of the ceramic layer between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the primary RF power delivery electrode at its respective location.

Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic layer. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic layer at a location vertically below the at least one clamp electrode such that a region of the ceramic layer between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the primary RF power delivery electrode at its respective location.

Abstract: A ceramic assembly is attached to a lower support structure having a bowl shape. The ceramic assembly has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic assembly. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic assembly at a location vertically below the at least one clamp electrode such that a region of the ceramic assembly between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic assembly. Each of the RF power delivery connection modules is configured to form an electrical connection from the lower support structure to the primary RF power delivery electrode at its respective location.

Abstract: A ceramic assembly is attached to a lower support structure having a bowl shape. The ceramic assembly has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic assembly. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic assembly at a location vertically below the at least one clamp electrode such that a region of the ceramic assembly between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic assembly. Each of the RF power delivery connection modules is configured to form an electrical connection from the lower support structure to the primary RF power delivery electrode at its respective location.

Abstract: A ceramic assembly is attached to a lower support structure having a bowl shape. The ceramic assembly has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic assembly. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic assembly at a location vertically below the at least one clamp electrode such that a region of the ceramic assembly between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic assembly. Each of the RF power delivery connection modules is configured to form an electrical connection from the lower support structure to the primary RF power delivery electrode at its respective location.

Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic layer. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic layer at a location vertically below the at least one clamp electrode such that a region of the ceramic layer between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the primary RF power delivery electrode at its respective location.

Abstract: A ceramic assembly is attached to a lower support structure having a bowl shape. The ceramic assembly has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic assembly. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic assembly at a location vertically below the at least one clamp electrode such that a region of the ceramic assembly between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic assembly. Each of the RF power delivery connection modules is configured to form an electrical connection from the lower support structure to the primary RF power delivery electrode at its respective location.

Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. A clamp electrode assembly is positioned within an upper region of the ceramic layer. The clamp electrode assembly serves to clamp the substrate to the top surface of the ceramic layer and functions as a primary radiofrequency (RF) power delivery electrode. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the clamp electrode assembly at its respective location.

Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic layer. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic layer at a location vertically below the at least one clamp electrode such that a region of the ceramic layer between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the primary RF power delivery electrode at its respective location.

Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic layer. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic layer at a location vertically below the at least one clamp electrode such that a region of the ceramic layer between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the primary RF power delivery electrode at its respective location.

Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic layer. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic layer at a location vertically below the at least one clamp electrode such that a region of the ceramic layer between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the primary RF power delivery electrode at its respective location.

Abstract: Systems and methods for determining an RF transmission line model for an RF transmission system includes generating a baseline RF transmission line model characterizing the RF transmission system. A plasma RF voltage, RF current, RF power and/or a corresponding RF induced DC bias voltage is calculated from the baseline RF transmission line model. An end module including the electrostatic chuck, a plasma and an RF return path is added to the baseline RF transmission line model to create one or more revised RF transmission line models. A revised plasma RF voltage, a revised plasma RF current, a revised plasma RF power and/or a corresponding revised RF induced DC bias voltage is calculated from each of the revised baseline RF transmission line models. The revised RF transmission line models are scored to identify a best fitting revised RF transmission line model as a complete RF transmission line model.

Abstract: A baseplate for a temperature controlled substrate support assembly in a vacuum chamber includes a single cavity in an upper surface of the base plate. A cylindrical wall extends upward around an outer perimeter of the base plate to define the cavity. A cover plate arranged on the base plate above the cavity is in thermal contact with the cylindrical wall of the base plate. A plurality of thermoelectric modules is arranged within the cavity in the upper surface of the base plate in thermal contact with the cover plate and the base plate and is sealed from the vacuum chamber and maintained at atmospheric pressure. A plurality of fluid channels is arranged within the base plate below the cavity. A plurality of heat transfer pipes extends downward toward the fluid channels from an upper surface of the base plate within the cavity.

Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic layer. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic layer at a location vertically below the at least one clamp electrode such that a region of the ceramic layer between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the primary RF power delivery electrode at its respective location.

Abstract: Plasma processing systems and methods including a plasma processing chamber and an RF transmission path. The plasma processing chamber including an electrostatic chuck. The RF transmission path including one or more RF generators, a match circuit coupled the RF generator and an RF feed coupling the match circuit to the electrostatic chuck. The system also includes an RF return path coupled between the plasma processing chamber and the RF generator. A plasma processing system controller is coupled to the plasma processing chamber and the RF transmission path. The controller includes recipe logic for at least one plasma processing recipe including multiple plasma processing settings and an RF power compensation logic for adjusting at least one of the plasma processing settings.

Abstract: A method includes receiving a voltage and current measured at an output of an RF generator of a first plasma system and calculating a first model etch rate based on the voltage and current, and a power. The method further includes receiving a voltage and current measured at an output of the RF generator of a second plasma system, determining a second model etch rate based on the voltage and current at the output of the RF generator of the second plasma system, and comparing the second model etch rate with the first model etch rate. The method includes adjusting a power at the output of the RF generator of the second plasma system to achieve the first model etch rate associated with the first plasma system upon determining that the second model etch rate does not match the first model etch rate. The method is executed by a processor.

Abstract: Plasma processing systems and methods including a plasma processing chamber and an RF transmission path. The plasma processing chamber including an electrostatic chuck. The RF transmission path including one or more RF generators, a match circuit coupled the RF generator and an RF feed coupling the match circuit to the electrostatic chuck. The system also includes an RF return path coupled between the plasma processing chamber and the RF generator. A plasma processing system controller is coupled to the plasma processing chamber and the RF transmission path. The controller includes recipe logic for at least one plasma processing recipe including multiple plasma processing settings and an RF power compensation logic for adjusting at least one of the plasma processing settings.