Abstract: A system includes a portable source of gaseous chlorine dioxide (CD). The source has first source and return couplings for sealingly connecting to a CD generation flow path comprising at least one gas conduit. The CD generation flow path comprises second source and return couplings for sealingly connecting the source to a device to be treated with the CD generation flow path, or a tent structure enclosing the device to be treated. A portable scrubber has third couplings for sealingly connecting to a scrubbing flow path comprising at least one gas conduit for removing the CD from the device or tent structure. The gas conduit has fourth couplings for connecting the device or tent structure to the scrubbing flow path.

Abstract: A system includes a portable source of gaseous chlorine dioxide (CD). The source has first source and return couplings for sealingly connecting to a CD generation flow path comprising at least one gas conduit. The CD generation flow path comprises second source and return couplings for sealingly connecting the source to a device to be treated with the CD generation flow path, or a tent structure enclosing the device to be treated. A portable scrubber has third couplings for sealingly connecting to a scrubbing flow path comprising at least one gas conduit for removing the CD from the device or tent structure. The gas conduit has fourth couplings for connecting the device or tent structure to the scrubbing flow path.

Abstract: A process for making a MOS device on a silicon substrate includes the step of forming a buried layer of germanium-silicon alloy in the substrate, or, alternatively, a buried layer of silicon enclosed between thin, germanium-rich layers. This buried layer is doped with boron, and tends to confine the boron during annealing and oxidation steps. The process includes a step of exposing the substrate to an oxidizing atmosphere such that an oxide layer 10 .ANG.-500 .ANG. thick is grown on the substrate.

Abstract: The invention is directed to a process for fabricating a device with a junction thereon with a depth of 0.06 microns or less. The substrate also has a silicon dioxide material thereon. A dopant source is applied over a junction on the substrate. The substrate is then rapid thermal annealed to drive the dopant source into the substrate. The dopant source is then removed from the substrate using an etchant that does not contain a significant amount of HF.

Abstract: A process is described for making semiconductor devices with highly controlled doping profiles. The process involves minimizing or eliminating segregation effects caused by surface electric fields created by Fermi-level pinning. These electric fields act on dopant ions and cause migration from the original deposition site of the doplant ions. Dopant ions are effectively shielded from the surface electric fields by illumination of the growth surfaces and by background doping. Also, certain crystallographic directions in certain semiconductors do not show Fermi-level pinning and lower growth temperatures retard or eliminate segregation effects. Devices are described which exhibit enhanced characteristics with highly accurate and other very narrow doping profiles.