Abstract: A method and apparatus for separating glass panels that minimizes process failures and improves separation process consistency by utilizing a separation handle which applies the minimal pressure necessary to remove the edge portion from the glass panel. The glass panel is cut along the score line, which outlines the edge portions of the glass panel to be removed. The panel is placed upon the separating apparatus, which pumps nitrogen along the underside of the glass panel, causing the glass panel to float above the apparatus. Locating pins are inserted to position the panel on the stage. Once the glass panel is in place, a vacuum sucks the panel against the stage, holding the panel tightly against the stage. The separation handle is then inserted over the edge portion to be removed. A measured force is applied to the handle, with the force incrementally increased until the slow, controllable separation of the edge is achieved. This level of force is maintained until separation is complete.

Abstract: A method and apparatus for separating glass panels that minimizes process failures and improves separation process consistency by utilizing a separation handle which applies the minimal pressure necessary to remove the edge portion from the glass panel. The glass panel is cut along the score line, which outlines the edge portions of the glass panel to be removed. The panel is placed upon the separating apparatus, which pumps nitrogen along the underside of the glass panel, causing the glass panel to float above the apparatus. Locating pins are inserted to position the panel on the stage. Once the glass panel is in place, a vacuum sucks the panel against the stage, holding the panel tightly against the stage. The separation handle is then inserted over the edge portion to be removed. A measured force is applied to the handle, with the force incrementally increased until the slow, controllable separation of the edge is achieved. This level of force is maintained until separation is complete.

Abstract: A method and apparatus for separating glass panels that minimizes process failures and improves separation process consistency by utilizing a separation handle which applies the minimal pressure necessary to remove the edge portion from the glass panel. The glass panel is cut along the score line, which outlines the edge portions of the glass panel to be removed. The panel is placed upon the separating apparatus, which pumps nitrogen along the underside of the glass panel, causing the glass panel to float above the apparatus. Locating pins are inserted to position the panel on the stage. Once the glass panel is in place, a vacuum sucks the panel against the stage, holding the panel tightly against the stage. The separation handle is then inserted over the edge portion to be removed. A measured force is applied to the handle, with the force incrementally increased until the slow, controllable separation of the edge is achieved. This level of force is maintained until separation is complete.

Abstract: Metal carbide supported polycrystalline diamond (PCD) compacts having improved shear strength and impact resistance properties, and a method for making the same under high temperature/high pressure (HT/HP) processing conditions. A sintered polycrystalline cubic boron nitride (PCBN) compact interlayer is provided to be bonded at a first interface to a sintered PCD compact layer, and at a second interface to a cemented metal carbide support layer comprising particles of a metal carbide in a binder metal. The supported compact is characterized as having a substantially uniform sweep through of the binder metal from the cemented metal carbide support layer, which sweep through bonds the sintered PCD compact layer to the sintered PCBN interlayer, and the sintered PCBN interlayer to the cemented metal carbide support layer.

Abstract: Supported polycrystalline compacts having improved shear strength, impact, and fracture toughness properties, and methods for making the same under high temperature/high pressure (HT/HP) processing conditions. The method involves a HT/HP apparatus formed of a generally cylindrical reaction cell assembly having an inner chamber of predefined axial and radial extents and containing pressure transmitting medium, and a charge assembly having axial and radial surfaces and formed of at least one sub-assembly comprising a mass of crystalline particles adjacent a metal carbide support layer. The charge assembly is disposed within the chamber of the reaction cell assembly, with the pressure transmitting medium being interposed between the axial and radial surfaces of the charge assembly and the extents of the reaction cell chamber to define an axial pressure transmitting medium thickness, L.sub.h, and a radial pressure transmitting medium thickness, L.sub.r, the ratio of which, L.sub.h /L.sub.

Abstract: Metal carbide supported polycrystalline diamond (PCD) compacts having improved shear strength and impact resistance properties, and a method for making the same under high temperature/high pressure (HT/HP) processing conditions. A sintered polycrystalline cubic boron nitrite (PCBN) compact interlayer is provided to be bonded at a first interface to a sintered PCD compact layer, and at a second interface to a cemented metal carbide support layer comprising particles of a metal carbide in a binder metal. The supported compact is characterized as having a substantially uniform sweep through of the binder metal from the cemented metal carbide support layer, which sweep through bonds the sintered PCD compact layer to the sintered PCBN interlayer, and the sintered PCBN interlayer to the cemented metal carbide support layer.

Abstract: An abrasive tool insert comprises a cemented substrate and a polycrystalline diamond layer formed thereon by high pressure, high temperature processing. The interface between the substrate and the diamond layer comprises at least one angled profile wherein said profile slopes downwardly and outwardly toward the periphery of the insert.

Abstract: Disclosed is an abrasive tool insert having an abrasive particle layer having an upper surface, an outer periphery, and a lower surface integrally formed on a substrate which defines an interface therebetween. The abrasive particle layer outer periphery forms a cutting plane. The thickness of the abrasive particle layer at its outer periphery cutting plane decreases radially inwardly. Thus, the interface can have a sawtooth shape cross-sectional profile, at least one slot extending from said abrasive particle layer outer periphery radially inwardly, or other configuration based on the precepts of the present invention. Also, the angle of the outwardly sloping profile can be matched to the anticipated angle of the wear plane which will develop as the PDC wears in use.

Abstract: A method for coating cluster compacts of polycrystalline diamond and CBN particles is provided, wherein the cluster compact is not exposed to high temperatures due to selective heating of the coating/cluster compact interface with the use of laser energy. Strong coatings can be formed on thermally sensitive compacts which allow such compacts to be brazed directly to a tool holder.

Abstract: MP.sub.15, where M is an alkali metal is used in a generator of P.sub.4 gas. KP.sub.15 is preferred. The generator is heated to produce the P.sub.4 gas. The generator may be used in various deposition processes such as chemical vapor deposition, vacuum evaporation, and molecular beam deposition. It is particularly useful in high vacuum processes below 10.sup.-3 Torr, particularly below 10.sup.-4 Torr such as vacuum evaporation and molecular beam deposition, for example vapor phase epitaxy and molecular beam epitaxy.

Abstract: Polycrystalline and monocrystalline potassium polyphosphide, KP.sub.15, has been grown from the liquid phase at a temperature range of 600.degree.-700.degree. C. Massive crystallization of KP.sub.15 whiskers and platelets is observed. Crystalline KP.sub.15 films have been grown on gallium arsenide (110) and gallium phosphide (111) polished wafers, silicon (110) polished wafers, quartz, on a nickel evaporated 2000 angstrom nickel layer on quartz, and on nickel foil. Microcrystalline KP.sub.15 formed by a condensed phase process is incorporated into a sealed ampule evacuate 10.sup.-4 torr. The temperature is raised to 655.degree. C. and the furnace tilted to bring the melt in contact with the substrates. The temperature is then reduced to 640.degree. C. and the furnace is tilted back to the original position. Large KP.sub.15 whiskers several millimeters in size are grown from the melt and crystalline films of KP.sub.15 are grown topotaxially on gallium arsenide and gallium phosphide.