Abstract: Process for increasing silicon deposition rates from silicon halide-hydrogen reaction gases wherein electronic-grade silicon bodies are produced from the deposition of silicon upon silicon slim rods heated and introduced into and pulled through a chemical vapor deposition chamber, the increased silicon deposition rates resulting from introducing small percentages by weight of silane to the silicon halide-hydrogen reaction gases, for example, silicon tetrachloride and/or trichlorosilane.

Abstract: A process for producing electronic-grade silicon bodies is disclosed wherein continuously-pulled slim rods which can be formed in situ from the reaction of a seed crystal and a molten silicon source, are pulled into and through a chemical vapor deposition chamber, having in combination different gas curtains along the chamber inner wall, the slim rod surfaces being preheated before entry into the deposition chamber where the rods are simultaneously exposed to heating and thermally decomposable gaseous silicon compounds in order to provide suitable surface reaction conditions on the slim rods for the decomposition of the gaseous silicon compounds resulting in deposition growth upon the surfaces of the rods.

Abstract: Apparatus and process for producing electronic-grade semiconductor bodies are disclosed wherein continuously-pulled slim rod which can be formed in situ from the reaction of a seed crystal and a molten semiconductor material source, is pulled into and through a chemical vapor deposition chamber, having a gas curtain along the inner wall, the slim rod surface being preheated before entry into the deposition chamber where it is simultaneously exposed to focused heating and thermally decomposable gaseous compounds in order to provide suitable surface reaction conditions on the slim rod for the decomposition of the gaseous compounds which results in deposition growth upon the surface of the rod.

Abstract: A method is provided for point rotation sawing of crystalline rod material at off-orientation angles wherein the crystalline rod is encapsulated in a molding media forming a cylindrical geometric encapsulation containing the rod with its crystallographic axis at an angle to the cylindrical axis of encapsulation, the angle coinciding with the off-orientation requirement. The encapsulation cylinder is rotated about its axis and contacted by sawing means at one or more points tangent to the cylinder surface and perpendicular to the cylinder's axis of rotation resulting in the sawing of a thin wafer from a cylinder which is inclusive of an off-orientation crystalline material wafer.

Abstract: A twin blade mounting and tensioning apparatus is disclosed wherein twin inside diameter cutting blades for sawing crystalline rod materials are mounted with annular clamping-tensioning members which clamp the twin blades between the members with the clamped twin blades having an outer annular shim and an inner annular shim located therebetween in a spaced apart relationship defining an annular fluid expansion chamber, the annular clamping-tensioning members having recessed annular chambers in circumferential alignment with and located axially outward from said expansion chamber, the expansion chamber separated from the recessed chambers by the twin blade walls which are flexible and deformable within said recessed chambers through the action of pressurized fluid means.

Abstract: A chemical polishing process for alpha-alumina utilizing a silica colloid polishing fluid which is both a reactant and a medium for the removal of the reaction product is disclosed.