Abstract: An improved ultra-fast cooling system is disclosed for cryopreservation of biomaterials. The ultra-fast cooling system is designed to uniformly vitrify or partially vitrify biomaterials, including but not limited to, human biomaterials, proteins, peptides, cells, stem cells, antibodies, neurons, human tissue, organs, cornea, skin, retina, eggs, sperm, embryos, body fluids, blood, serum, lymph fluid, animal tissue, plant biomaterials, plant tissue, germ plasma, pollen, plant sap, and bioengineered tissue, without cryoprotectants or with a low concentration of cryoprotectants. Cooling rates are sufficient to uniformly cryopreserve biomaterials, and can be used in diagnostic cytology and biological cryofixation applications. Other materials also can be cooled uniformly, such as inorganic materials for processing.

Abstract: An improved ultra-fast cooling system is disclosed for cryopreservation of biomaterials. The ultra-fast cooling system is designed to uniformly vitrify or partially vitrify biomaterials, including but not limited to, human biomaterials, proteins, peptides, cells, stem cells, antibodies, neurons, human tissue, organs, cornea, skin, retina, eggs, sperm, embryos, body fluids, blood, serum, lymph fluid, animal tissue, plant biomaterials, plant tissue, germ plasma, pollen, plant sap, and bioengineered tissue, without cryoprotectants or with a low concentration of cryoprotectants. Cooling rates are sufficient to uniformly cryopreserve biomaterials, and can be used in diagnostic cytology and biological cryofixation applications. Other materials also can be cooled uniformly, such as inorganic materials for processing.

Abstract: An improved optical fluorescence optical imaging system is disclosed having an excitation radiation source and an emission imaging camera. The imaging system is designed for capturing video fluorescence emission images of live animal tissue in blood containing fluorescent dye. The excitation radiation source unit can easily be adapted for use with different excitation wavelengths as can the imaging camera. Hence, the system is amenable for use with a variety of different fluorescent dyes, including those with exciting wavelengths in the ultraviolet, visible, and infrared spectral regions. The small size of both the optical excitation radiation source and emission imaging camera make the entire system relatively unobtrusive to surgeons and other health care personnel in a surgical suite.

Abstract: A layered heterostructure field effect transistor (HFET) comprises a substrate, a first semiconductor oxide layer grown on the substrate, and a second semiconductor oxide layer grown on the first layer semiconductor layer and having an energy band gap different from that of the first semiconductor layer, and the second layer also having a gate region and a drain region and a source region with electrical contacts to gate, drain and source regions sufficient to form a HFET. The substrate may be a material, including a single crystal material, and may contain a buffer layer material on which the first semiconductor layer is grown. The conductivity type of the first and second semiconductor layers and the composition of the semiconductor oxide layers can be selected to improve performance for desired operational features of the HFET. This layered structure can be applied for the improvement in the function and high frequency and high power performance of semiconductor HFET devices.

Abstract: An example embodiment of a method for making gold nanoparticles includes steps of reacting a gold salt with a phosphino amino acid. Example phosphino amino acids include trimers, with a particular example being a trimeric amino acid conjugate containing one phosphino group. In an example method of the invention, the gold nanoparticles may be produced in timer periods of less than about 3 minutes, and at temperatures of less than about 30° C. Other methods of the invention are directed to methods for stabilizing gold nanoparticles, and to methods for making gold nanochains.

Abstract: Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide semiconductor light emitting devices and other metal oxide semiconductor devices, such as ZnO based semiconductor devices.

Abstract: Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide semiconductor light emitting devices and other metal oxide semiconductor devices, such as ZnO based semiconductor devices.

Abstract: A layered heterostructure light emitting device comprises at least a substrate, an n-type gallium nitride-based semi-conductor cladding layer region, a p-type gallium nitride-based semiconductor cladding layer region, a p-type zinc oxide-based hole injection layer region, and an ohmic contact layer region. Alternatively, the device may also comprise a capping layer region, or may also comprise a reflective layer region and a protective capping layer region. The device may also comprise one or more buried insertion layers adjacent to the ohmic contact layer region. The ohmic contact layer region may be comprised of materials such as indium tin oxide, gallium tin oxide, or indium tin oxide material. An n-electrode pad is formed that is in electrical contact with the n-type gallium nitride based cladding layer region. A p-type pad is formed that is in electrical contact with the p-type region.

Abstract: A hybrid beam deposition (HBD) system and methods according to the present invention utilizes a unique combination of pulsed laser deposition (PLD) technique and equipment with equipment and techniques that provide a radical oxygen rf-plasma stream to effectively increase the flux density of available reactive oxygen at a deposition substrate for the effective synthesis of metal oxide thin films. The HBD system and methods of the present invention further integrate molecular beam epitaxy (MBE) and/or chemical vapor deposition (CVD) techniques and equipment in combination with the PLD equipment and technique and the radical oxygen rf-plasma stream to provide elemental source materials for the synthesis of undoped and/or doped metal oxide thin films as well as the synthesis of undoped and/or doped metal-based oxide alloy thin films.

Abstract: Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn1-xBexO, can be varied to increase the energy band gap of ZnO to values larger than that of ZnO. The atomic fraction y of Cd and the atomic fraction z of Se in the ZnCdOSe alloy system, namely, Zn1-yCdyO1-zSez, can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped, or p-type or n-type doped; by use of selected dopant elements.

Abstract: An epitaxially layered structure with gate voltage bias supply circuit element for improvement in performance for semiconductor field effect transistor (FET) devices utilizes a structure comprised of a substrate, a first layer semiconductor film of either an n-type or a p-type grown epitaxially on the substrate, with the possibility of a buffer layer between the substrate and first layer film, an active semiconductor layer grown epitaxially on the first semiconductor layer with the conductivity type of the active layer being opposite that of the first semiconductor layer, with the active layer having a gate region and a drain region and a source region with electrical contacts to gate, drain and source regions sufficient to form a FET, an electrical contact on either the substrate or the first semiconductor layer, and a gate voltage bias supply circuit element electrically connected to gate contact and to substrate or first semiconductor layer with voltage polarity and magnitude sufficient to increase device

Abstract: A process for preparing p-n or n-p junctions having a p-type oxide film is disclosed. In one embodiment, a p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3.

Abstract: A process for preparing p-n or n-p junctions having a p-type oxide film is disclosed. In one embodiment, a p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3.

Abstract: A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.

Abstract: A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.

Abstract: A p-type zinc oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.

Abstract: A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.

Abstract: A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.

Abstract: A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.

Abstract: A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.