Abstract: The present invention provides a display with touch control function. The display includes a touch panel module, a display module and a FPC hoard. The touch panel module includes a touch panel controller and a touch panel. The display module includes a display driver and a display panel. The touch panel is joined with the display panel. The FPC board couples with the display panel. The touch panel controller and the display driver are disposed on the FPC board.

Abstract: A semiconductor device including a substrate, a metal layer, an insulating layer, a semiconductor layer, a drain and a source is provided. The substrate has a surface and a first cavity. The metal layer is disposed on the substrate and covers the surface and inner-wall of the first cavity to define a second cavity corresponding to the first cavity. The insulating layer covers the metal layer and inner-wall of the second cavity to define a third cavity corresponding to the second cavity. The semiconductor layer exposes a portion of the insulating layer and covers the inner-wall of the third cavity to define a fourth cavity corresponding to the third cavity. The drain and source are disposed on the semiconductor layer and covers a portion of the semiconductor layer and a portion of the insulating layer, in which the drain and source expose the fourth cavity.

Abstract: A transistor structure disposed on a substrate includes a gate electrode, an organic semiconductor layer, a gate insulation layer and a patterned metal layer. The gate insulation layer is disposed between the gate and the organic semiconductor layer. The patterned metal layer has a conductive oxidation surface and is divided into a source electrode and a drain electrode. A portion of the organic semiconductor layer is exposed between the source electrode and the drain electrode. The conductive oxidation surface directly contacts with the organic semiconductor layer.

Abstract: A tapering jig for a woodworking apparatus that includes a top and bottom plate that pivot relative to one another to set a cutting angle of a work piece. The jig further includes at least one scale of one or more markings that represent a cutting angle and/or a “rise and run” measurement. In addition, a dial is positioned relative to the at least one scale to identify and set the cutting angle and/or “rise/run” measurement. The dial includes a plurality of pointers and a plurality of pins and each pin is associated with a respective pointer. Consecutive pins are offset incrementally from the respective pointers so that each pointer can be inserted in the same recess adjacent to the scale to incrementally adjust the cut angle and/or “rise/run” measurement.

Abstract: Disclosed herein is an electrostatic discharge protection structure which includes a signal line, a thin-film transistor and a shunt wire. The thin-film transistor includes a gate electrode, a metal-oxide semiconductor layer, a source electrode and a drain electrode. The first metal-oxide semiconductor layer is disposed above the first gate electrode. The metal-oxide semiconductor layer has a channel region characterized in having a width/length ratio of less than 1. The source electrode is equipotentially connected to the gate electrode. The shunt wire is electrically connected to the drain electrode. When the signal line receives a voltage surge of greater than a predetermined magnitude, the voltage surge is shunted through the thin-film transistor to the shunt wire.

Abstract: A three-dimension circuit structure includes a substrate, a first conductive layer, a filled material and a second conductive layer. The substrate has an upper surface and a cavity located at the upper surface. The first conductive layer covers the inside walls of the cavity and protrudes out the upper surface. The filled material fills the cavity and covers the first conductive layer. The second conductive layer covers the filled material and a portion of the first conductive layer, and the first conductive layer and the second conductive layer encapsulate the filled material. The material of the filled material is different from that of the first conductive layer and the second conductive layer.

Abstract: A thin film transistor (TFT) is provided, which includes a gate, a semiconductor layer, an insulation layer, a source and a drain. The semiconductor layer has a first end and a second end opposite to the first end. The insulation layer is disposed between the gate and the semiconductor layer. The source clamps the first end of the semiconductor layer and the drain clamps the second end of the semiconductor layer.

Abstract: A light sensing device is disclosed. The light sensing device includes a first light sensor and a second light sensor. The first light sensor formed on a substrate includes a first metal oxide semiconductor layer for absorbing a first light having a first waveband. The second light sensor formed on the substrate includes a second metal oxide semiconductor layer and an organic light-sensitive layer on the second metal oxide semiconductor layer for absorbing a second light having a second waveband.

Abstract: A push block for a woodworking tool comprises at least heel member at an end of the push block and the heel member is passively actuatable to an extended position to engage a trailing end surface of a work piece to advance the work piece by a working element. The push block also includes a wall member along a first side of the push block to serve as a barrier between a cutting element and an operator's hand. In addition, the push block includes a handle that is disposed obliquely relative to first and second sides and a longitudinal axis of the push block.

Abstract: A push block for a woodworking tool comprises at least heel member at an end of the push block and the heel member is passively actuatable to an extended position to engage a trailing end surface of a work piece to advance the work piece by a working element. The push block also includes a wall member along a first side of the push block to serve as a barrier between a cutting element and an operator's hand. In addition, the push block includes a handle that is disposed obliquely relative to first and second sides and a longitudinal axis of the push block.

Abstract: A push block for a woodworking tool comprises at least heel member at an end of the push block and the heel member is passively actuatable to an extended position to engage a trailing end surface of a work piece to advance the work piece by a working element. The push block also includes a wall member along a first side of the push block to serve as a barrier between a cutting element and an operator's hand. In addition, the push block includes a handle that is disposed obliquely relative to first and second sides and a longitudinal axis of the push block.

Abstract: A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector.

Abstract: A thin film transistor (TFT) includes a gate, a semiconductor layer, an insulating layer, a source, a drain, and a current reduction layer. The insulating layer is disposed between the gate and the semiconductor layer. The source is connected to the semiconductor layer. The drain is connected to the semiconductor layer, and the source and the drain are separated from each other. The current reduction layer has a first part and a second part. The first part is disposed between the semiconductor layer and at least a part of the source, and the second part is disposed between the semiconductor layer and at least a part of the drain.

Abstract: A color electrophoretic display includes a substrate, a segment electrode circuit layer, a transparent electrode layer, an electrophoretic display medium layer, and a colored polymer film. The segment electrode circuit layer is disposed on the substrate and is configured to display a letter and/or a pattern. The transparent electrode layer is disposed opposing the segment electrode circuit layer, and the electrophoretic display medium layer is disposed between the segment electrode circuit layer and the transparent electrode layer. The electrophoretic display medium layer is controlled by an electric field that is produced and varied by the segment electrode circuit layer and the transparent electrode layer to change brightness. The color polymer film is disposed on the transparent electrode layer to produce color. The colored polymer film includes a polymer layer and pigment particles distributed in the polymer layer.

Abstract: A tapering jig for a woodworking apparatus that includes a top and bottom plate that pivot relative to one another to set a cutting angle of a work piece. The jig further includes at least one scale of one or more markings that represent a cutting angle and/or a “rise and run” measurement. In addition, a dial is positioned relative to the at least one scale to identify and set the cutting angle and/or “rise/run” measurement. The dial includes a plurality of pointers and a plurality of pins and each pin is associated with a respective pointer. Consecutive pins are offset incrementally from the respective pointers so that each pointer can be inserted in the same recess adjacent to the scale to incrementally adjust the cut angle and/or “rise/run” measurement.

Abstract: A method for manufacturing oxide thin film transistors includes steps of: forming a gate, a drain electrode, a source electrode, and an oxide semiconductor layer respectively. The oxide semiconductor layer is formed on the gate electrode; the drain electrode and the source electrode are formed at two opposite sides of the oxide semiconductor layer. The method further includes a step of depositing a dielectric layer of silicon oxide, and a reacting gas for depositing the silicon oxide includes silane and nitrous oxide. A flow rate of nitrous oxide is in a range from 10 to 200 standard cubic centimeters per minute (SCCM). Oxide thin film transistors manufactured by above method has advantages of low leakage, high mobility, and other integrated circuit member can be directly formed on the thin film transistor array substrate of a display device.

Abstract: A method for manufacturing a color display provides a bottom substrate, injects a liquid display media onto the bottom substrate, and disposes a sealing substrate on the liquid display media, such that the liquid display media is contained between the sealing substrate and the bottom substrate. The method also aligns an image device corresponding to the bottom substrate and transfers a color coating onto the sealing substrate by a laser device through a laser thermal transfer process to form a color filter layer on the sealing substrate.

Abstract: A display device including a thin film transistor array substrate, transparent electrode substrate and a display medium layer disposed therebetween is provided. The thin film transistor array substrate includes a plurality of thin film transistors with an oxide semiconductor layer respectively. In each thin film transistor, a gate electrode and a gate insulating layer are disposed on a substrate sequentially and the gate electrode is covered by the gate insulating layer. The oxide semiconductor layer is conformably covering on the gate insulating layer and has a channel region located above the gate electrode. A source electrode and a drain electrode of each thin film transistor are disposed on the oxide semiconductor layer and at one side of the channel region respectively. Since the oxide semiconductor layer is made of transparent material, the patterning process of the oxide semiconductor layer can be omitted during the manufacturing process of the reflective display device.

Abstract: An approach to supplying a data stream, for e.g., an internet-based video conference, to multiple client devices in a network, including attempting, at a first client device, to join an Internet Protocol (IP) multicast session in a network in which the first client device is operating and, if unsuccessful to attempt to join a unicast transmission of the data stream from a network node other than the meeting server and that is in a same subnet as the first client device, and if the unicast join within the same subnet is unsuccessful, registering the first client device with the meeting server to obtain at least one candidate node from which to receive the data stream.

Abstract: A thin film transistor (TFT) including a gate, a dielectric layer, a metal-oxide semiconductor channel, a source, and a drain is provided. The gate and the metal-oxide semiconductor channel are overlapped. The gate, the source, and the drain are separated by the dielectric layer. Besides, the source and the drain are respectively located on two opposite sides of the metal-oxide semiconductor channel. The metal-oxide semiconductor channel includes a metal-oxide semiconductor layer and a plurality of nano micro structures disposed in the metal-oxide semiconductor layer and separated from one another. In another aspect, a display panel including the TFT and a method of fabricating the TFT are also provided.