Abstract: A thin film diamond coating is formed relatively slowly with a relatively low methane concentration and is identified by its Raman spectrographic characteristics. The thin film diamond, preferably 5 to 40 microns thick, provides substantially greater corrosion and erosion resistance in a corrosive environment than other thin film diamond coatings. It is believed that such thin film diamond coating is provided with enhanced chemical resistance due to its purity and quality.

Abstract: A thin film diamond coating is formed relatively slowly with a relatively low methane concentration and is identified by its Raman spectrographic characteristics. The thin film diamond, preferably 5 to 40 microns thick, provides substantially greater corrosion and erosion resistance in a corrosive environment than other thin film diamond coatings. It is believed that such thin film diamond coating is provided with enhanced chemical resistance due to its purity and quality.

Abstract: An array of carbon-based emitters is provided having more uniform electron emission over the area of the array. This is made possible by a resistive layer that is present below each of the emission tips. Both organic and inorganic resistive layers may be grown under the emitting carbon-based material. A conductive backing layer is in contact with the resistive layer. Methods for making the improved array are provided. The methods include growth of carbon-based tips in a mold, removal of various films or portions of films by etching, and other techniques.

Abstract: A system and method for depositing a CVD diamond coating on a non-planar surface of an object is provided. The system includes a deflector having a deflecting surface which resists diamond coating by the diamond forming reagents produced by the system and which is adapted to withstand the relatively high deposition temperatures is provided. The deflector is positioned substantially axially with an axis of the distribution head of the CVD engine. The deflector is preferably generally wedge-shaped or conical and coupled to a motor which is adapted to rotate the deflector at a relatively high speed. A mandrel may be positioned about or to one side of the deflector. The deflector is oriented with respect to the distribution head and the mandrel such that a jet exiting the distribution head is deflected by the deflector onto a surface of an object positioned on the mandrel. The object surface may be non-planar.

Abstract: The method of the present invention includes placing a solid dopant in or near the nozzle of a DC arc jet. According to one embodiment of the invention, the interior surface of an arc jet nozzle is coated with a layer of copper by brushing the surface with a copper brush. According to another embodiment of the invention, the interior surface of an arc jet nozzle is coated with a layer of copper by plating it with copper. According to another embodiment of the invention, a copper cylinder is placed inside an arc jet nozzle. Apparatus according to the invention include a DC arc jet with a solid dopant placed in or near the nozzle according to one of the methods described. Diamonds according to the invention are conductive diamonds formed by a plasma jet process where a solid dopant was placed in or near the nozzle according to one of the methods described.

Abstract: An apparatus for depositing synthetic diamond on a surface of a substrate includes a deposition chamber and a cooling block having a surface in the deposition chamber that is cooled by heat exchange. The substrate is supported from the cooling block so that the bottom surface of the substrate is spaced from the cooling block surface by a gap, and a gas is provided in the deposition chamber and in the gap, the gas comprising at least 30 percent hydrogen gas. A plasma deposition system forms in the chamber a plasma containing hydrogen gas and a hydrocarbon gas for depositing synthetic diamond on the top surface of the substrate.

Abstract: Diamond film is deposited by chemical vapor deposition on the surface of a graphite mandrel which is covered with a protective coating to which the diamond film adheres. After completion of the deposition, the diamond is removed from the mandrel by sawing through the substrate to saw off a layer thereof which includes the deposition surface and the diamond film. The graphite and protective coating may be left in place for some applications or be removed either chemically or by mechanical abrasion to separate the diamond therefrom.

Abstract: A synthetic diamond film structure, comprising a generally planar free standing layered diamond structure having a surface area of at least 1000 square millimeters, having the following layers: a first layer having a first thicknesss and a relatively low intrinsic stress; and second layer having a second thickness and a relatively high intrinsic stress; the first thickness being sufficiently thick to prevent the diamond structure from bowing by more than a given distance.

Abstract: A method for depositing a substance, such as diamond, on a surface of a substrate with temperature control, which comprises the steps of providing a cooling block having a surface that is cooled by heat exchange; supporting said substrate from said cooling block so that the bottom surface of said substrate is spaced from said cooling block surface by a gap, the size of said gap being in the range of 0.01 cm to 0.30 cm; providing a gas in said gap; and depositing said substance on the top surface of said substrate, whereby heat, resulting from said depositing of said substance, flows by conduction across said gap from said substrate to said cooling block.

Abstract: A method for producing free-standing diamond film having a surface area of at least 1000 square millimeters includes the following steps: providing a substrate; depositing, on the substrate, by chemical vapor deposition, a first layer of diamond over a surface area of at least 1000 square millimeters, and to a first thickness, the first layer being deposited at a first deposition rate; depositing, on the first layer, a second layer of diamond, over a surface area of at least 1000 square millimeters, and to a second thickness, the second layer being deposited at a second deposition rate; and releasing the diamond from the substrate; the second deposition rate being as lest twice as high as the first deposition rate, and the first thickness being sufficiently thick to prevent the released diamond from bowing by more than a given distance.

Abstract: A process for forming a transparent silicon carbide film on substrates by magnetron sputtering a silicon carbide target in a partial vacuum having a partial pressure of hydrogen and argon.

Abstract: A novel dual ion beam sputtering process for depositing thin films of high density is described. One of the ion beams contains relatively heavy sputtering ions, such as argon ions, for ejecting atoms from a target. The second ion beam is also directed at the target and contains ions having energies of at least 3 electron volts and less than 20 electron volts. The products of the beams are collected on a substrate as a thin film. High density, hydrogenated amorphous semiconductor films, oxide and nitride films, and other films, may be deposited according to the process. The films have densities nearly equal those observed for bulk samples of the same materials. Hydrogenated amorphous silicon films deposited by the process exhibit enhanced photoconductivity.

Abstract: A sputtering process for efficiently preparing amorphous semiconducting films having a reduced number of localized states is disclosed. In particular, hydrogenated semiconductor films free of polyhydrides may be prepared according to the inventive process. In one application of the process, a silicon target is simultaneously bombarded by separate beams of relatively heavy sputtering ions, such as argon ions, effective in sputtering the target at relatively high rates, and by ions of a substance effective in passivating localized states in amorphous semiconducting films, such as hydrogen ions. The products of this sputtering process are collected on remotely located substrates to form a passivated amorphous semiconductor film. In another application of the process, a target composed of a semiconductor alloy is used with separate sputtering and passivating ion beams directed at the target to deposit a passivated compound semiconductor film.

Abstract: A method for tensioning a thin film on a support ring to achieve an optically flat membrane. The support ring is optically flat with a slight bevel at its outside edge where the membrane is epoxied to the support ring.

Abstract: The invention is also directed to a method of fabricating a pellicle cover assembly for use in a projection printing system for forming an image on a radiation sensitive wafer, the method comprising the steps of applying a gold film onto the surface of a wafer, applying a polymer film onto the gold film surface, curing the polymer film, adhering a support ring to the polymer film, cutting through the polymer and gold films between the ring and wafer edges to expose the wafer surface, peeling the ring off the wafer and etching off the gold film.

Abstract: The invention is directed to a method of fabricating a pellicle cover assembly for use in a projection printing system for forming an image on a radiation sensitive wafer, the method comprising the steps of applying a gold film onto the surface of a wafer, applying a polymer film onto the gold film surface, curing the polymer film, adhering a support ring to the polymer film, cutting through the polymer and gold films between the ring and wafer edges to expose the wafer surface, peeling the ring off the wafer and etching off the gold film.