Abstract: A thin film capacitor for use in semiconductor integrated circuit devices such as analog circuits, rf circuits, and dynamic random access memories (DRAMs), and a method for its fabrication, is disclosed. The capacitor has a dielectric thickness less than about 50 nm, a capacitance density of at least about 15 fF/.mu.m.sup.2, and a breakdown field of at least about 1 MV/cm. The dielectric material is a metal oxide of either titanium, niobium, or tantalum. The metal oxide can also contain silicon or nitrogen. The dielectric material is formed over a first electrode by depositing the metal onto the substrate or onto a first electrode formed on the substrate. The metal is then anodically oxidized to form the dielectric material of the desired thickness. A top electrode is then formed over the dielectric layer. The top electrode is a metal that does not degrade the electrical characteristics (e.g. the leakage current or the breakdown voltage) of the dielectric layer.

Abstract: An improved apparatus and method for the manufacture of integrated circuits is disclosed. At least three protrusions extend from the wafer support susceptor. The protrusions slightly electrically decouple the wafer from the susceptor during plasma processing. The protrusions prevent gradual debris build-up on the susceptor from causing variation from lot-to-lot in plasma processing results.

Abstract: A fluid (12), such as dichlorosilane, is stored in a pressure vessel (17) located at a site remote from a processing facility within the confines of a building (14). At such remote site the pressure vessel (17) is subject to climatic temperature variations over a range at the lower temperatures of which a vapor pressure of the fluid may be insufficient to generate a pressure within the pressure vessel to drive the fluid through a duct (36) toward the processing facility. A supply of an inert gas (34) is applied at a first predetermined pressure to the pressure vessel (17) to urge the fluid under such predetermined pressure through the duct (36) toward an evaporator vessel (38) located at the processing facility. The evaporator vessel (38) is maintained at a first predetermined elevated temperature at which the fluid at such first predetermined pressure is in a gaseous state.

Abstract: Workpieces (11), such as semiconductor wafers, are treated in a plasma reaction apparatus (10). The wafers are loaded onto a workholder (18), where they become seated in contact with facing surfaces of a plurality of spaced, parallel plates (19, 21). Plasma is generated in each of the spaces (23) between two adjacent ones of the plates by coupling such adjacent plates to opposite terminals (31, 32) of an R-F generator (29). Each of the plates is comprised of a base structure (41) of a thermally stable, conductive material, such as graphite. The base structure is covered with a first layer (43) of a hard material, such as silicon carbide to impart wear resistance to the graphite. The layer (43), in turn, is covered by an outer, conductive layer (44) which, in the described embodiment is a layer of aluminum.

Abstract: A method of electrolessly plating a substrate having a rubber-modified epoxy surface includes the steps of preheating the substrate and while still warm, sputter etching at least 50A. from its surface. The substrate is then vacuum metalized with an adhesion promoting metal film, coated with a catalytic layer and a metal is electrolessly deposited thereover.