Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 ?m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: An optical multiplexer that adjusts the wavelength response and compensates for temperature effects by using rotatable mirror. The wavelength response of the device is adjusted by aligning the mirror at a correct angle with respect to the surface terminating the optical waveguide grating. The temperature dependence of the index of refraction of the material comprising the waveguides is compensated for by rotating a reflecting surface of the mirror, the rotation based on differential thermal expansion. Some exemplary embodiments may comprise a slab waveguide on a substrate (the slab waveguide having a first and second arcuate end surfaces) attached to a submount, a mirror assembly rigidly attached to the submount (the mirror assembly comprising a first and second materials having different coefficients of thermal expansion), and an optical waveguide grating (upon the substrate attached to the submount) optically coupled between the second arcuate surface and the mirror assembly.

Abstract: An optical multiplexer that adjusts the wavelength response and compensates for temperature effects by using rotatable mirror. The wavelength response of the device is adjusted by aligning the mirror at a correct angle with respect to the surface terminating the optical waveguide grating. The temperature dependence of the index of refraction of the material comprising the waveguides is compensated for by rotating a reflecting surface of the mirror, the rotation based on differential thermal expansion. Some exemplary embodiments may comprise a slab waveguide on a substrate (the slab waveguide having a first and second arcuate end surfaces) attached to a submount, a mirror assembly rigidly attached to the submount (the mirror assembly comprising a first and second materials having different coefficients of thermal expansion), and an optical waveguide grating (upon the substrate attached to the submount) optically coupled between the second arcuate surface and the mirror assembly.

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 ?m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 &mgr;m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4): sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: Methods of fabricating solid state optical waveguide structures comprising a doped silicon dioxide core layer sandwiched between lower and upper doped silicon dioxide cladding layers on a silicon substrate. The core and upper cladding layers are deposited using a plasma enhanced CVD process. The core layer is patterned to define one or more waveguide cores. The lower cladding layer is preferably also deposited using a plasma enhanced CVD process but alternatively may be formed by thermal oxidation.

Abstract: Methods of fabricating solid state optical waveguide structures comprising a doped silicon dioxide core layer sandwiched between lower and upper doped silicon dioxide cladding layers on a silicon substrate. The core and upper cladding layers are deposited using a plasma enhanced CVD process. The core layer is patterned to define one or more waveguide cores. The lower cladding layer is preferably also deposited using a plasma enhanced CVD process but alternatively may be formed by thermal oxidation.

Abstract: An optical waveguide mode transformer has a substrate supporting a high refractive index core layer surrounded by lower refractive index cladding. The core layer includes a wide input waveguide section to accept a multimode, including a fundamental mode, light input. The input waveguide section is coupled to a narrow output waveguide section by a tapered region having a taper length enabling adiabatic transfer of the fundamental mode of the multimode light from the wide input waveguide section to the output waveguide section while suppressing(stripping) other modes of the multimode light input. The narrow output waveguide section supports a single mode light output comprising said fundamental mode. The core layer is contoured to include a localized upstanding ridge intermediate opposite lateral sides of the core layer.

Abstract: An optical waveguide structure comprising an annealed phosphorous doped silicon dioxide core surrounded by silicon dioxide cladding layers on a silicon substrate. The refractive index of the core exceeds the refractive index of the cladding to enable waveguiding of optical signals in the core. The upper cladding layer, and in one embodiment also the lower cladding, comprises high boron and phosphorous doped silicon dioxide, suitably doped with greater than about 9% of boron and with about 2.5% to 3.5% phosphorous to obtain a thermal coefficient of expansion approximating that of the silicon substrate. In an alternative embodiment, the lower cladding layer comprises thermally grown silicon dioxide, preferably including an upstanding pedestal on which the waveguide core extends.

Abstract: An optical waveguide device comprising a free space region, suitably provided by a slab waveguide, having optical signal ports for coupling to input and output waveguide sections and an optical waveguide grating including an array of grating waveguides coupling the free space region to a reflector surface to provide a folded structure. Dielectric waveguide structures are preferred. The grating includes tapered optical waveguide sections laterally spaced and optically isolated from each other which extend from the free space region, with the grating waveguides continuing as extensions of the tapered waveguide sections. Each of the grating waveguides differs in length from a neighboring grating waveguide by a constant increment, preferably an optical path length increment.

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 &mgr;m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: An optical waveguide device comprising a free space region, suitably provided by a slab waveguide, having optical signal ports for coupling to input and output waveguide sections and an optical waveguide grating including an array of grating waveguides coupling the free space region to a reflector surface to provide a folded structure. Dielectric waveguide structures are preferred. The grating includes tapered optical waveguide sections laterally spaced and optically isolated from each other which extend from the free space region, with the grating waveguides continuing as extensions of the tapered waveguide sections. Each of the grating waveguides differs in length from a neighboring grating waveguide by a constant increment, preferably an optical path length increment.

Abstract: An optical waveguide device comprising a free space region, suitably provided by a slab waveguide, having optical signal ports for coupling to input and output waveguide sections and an optical waveguide grating including an array of grating waveguides coupling the free space region to a reflector surface to provide a folded structure. Dielectric waveguide structures are preferred. The grating includes tapered optical waveguide sections laterally spaced and optically isolated from each other which extend from the free space region, with the grating waveguides continuing as extensions of the tapered waveguide sections. Each of the grating waveguides differs in length from a neighboring grating waveguide by a constant increment, preferably an optical path length increment.

Abstract: Aluminum nitride, AlN, layers are grown on silicon substrates using molecular beam epitaxial (MBE) growth. The AlN layer is initially grown by subjecting the silicon substrate to background ammonia followed by repetitively alternating the flux of 1) Al without ammonia and 2) ammonia without Al. After the surface of the silicon structure is sufficiently covered with AlN, the wafer is further subjected to a flux of ammonia and aluminum applied simultaneously to continue the epitaxial growth process. The process minimizes the formation of amorphous silicon nitride, SiNx, compounds on the surface of the substrate which form due to background nitrogen levels in the molecular beam epitaxial growth apparatus. A surface free of amorphous silicon nitride is necessary for formation of high quality AlN. The AlN layer may be further used as a buffer layer for AlGaN/GaN growth. After the AlN layer is grown on the silicon structure, the silicon structure may be subjected to a flux of Ga and nitrogen to form a layer of GaN.

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 &mgr;m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: Expedient fabrication of fine-featured integrated circuits entails aperture pattern delineation to produce a masking layer atop a semiconductor body followed by insertion within a controlled atmosphere chamber within which device-functional layered material is epitaxially grown within apertures. Critical, device-consequential properties of epitaxial material is assured by removal of a thin surface layer of material revealed during delineation. Such removal, sufficient to eliminate meaningful contamination and/or crystalline damage introduced during delineation, is of sufficiently small quantity as to be accommodated within the chamber. Under most circumstances, the controlled atmosphere is at reduced pressure as required for e.g. MOMBE epitaxial growth.