Patents by Inventor Henryk Turski

Henryk Turski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Platforms enabled by buried tunnel junction for integrated photonic and electronic systems
    Patent number: 11476383
    Abstract: A device that includes a metal(III)-polar III-nitride substrate having a first surface opposite a second surface, a tunnel junction formed on one of the first surface or a buffer layer disposed on the first surface, a p-type III-nitride layer formed directly on the tunnel junction, and a number of material layers; a first material layer formed on the p-type III-nitride layer, each subsequent layer disposed on a preceding layer, where one layer from the number of material layers is patterned into a structure, that one layer being a III-nitride layer. Methods for forming the device are also disclosed.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: October 18, 2022
    Assignee: Cornell University
    Inventors: Henryk Turski, Debdeep Jena, Huili Grace Xing, Shyam Bharadwaj, Alexander Austin Chaney, Kazuki Nomoto
  • MONOLITHICALLY INVERTED III-V LASER DIODE REALIZED USING BURIED TUNNEL JUNCTION
    Publication number: 20220294189
    Abstract: Tunnel junctions (TJs) are used to invert a relative arrangement of the built-in polarization and current flow direction for metal (Ill)-polar grown Ill-nitride laser diodes (LDs). The resulting devices has subsequent TJ, p-type layers, active region and n-type layers. This arrangement ensures a band alignment which provides an injection efficiency of 100% without the need of close proximity of an electron blocking layer.
    Type: Application
    Filed: April 1, 2020
    Publication date: September 15, 2022
    Inventors: Henryk Turski, Grzegorz MUZIOL, Marcin SIEKACZ, Czeslaw SKIERBISZEWSKI, Debdeep Jena, Huili Grace Xing
  • PLATFORMS ENABLED BY BURIED TUNNEL JUNCTION FOR INTEGRATED PHOTONIC AND ELECTRONIC SYSTEMS
    Publication number: 20210043795
    Abstract: A device that includes a metal(III)-polar III-nitride substrate having a first surface opposite a second surface, a tunnel junction formed on one of the first surface or a buffer layer disposed on the first surface, a p-type III-nitride layer formed directly on the tunnel junction, and a number of material layers; a first material layer formed on the p-type III-nitride layer, each subsequent layer disposed on a preceding layer, where one layer from the number of material layers is patterned into a structure, that one layer being a III-nitride layer. Methods for forming the device are also disclosed.
    Type: Application
    Filed: January 31, 2019
    Publication date: February 11, 2021
    Applicant: Cornell University
    Inventors: Henryk Turski, Debdeep Jena, Huili Grace Xing, Shyam Bharadwaj, Alexander Austin Chaney, Kazuki Nomoto