Patents by Inventor Heon Bok LEE
Heon Bok LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240063276Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.Type: ApplicationFiled: October 17, 2023Publication date: February 22, 2024Inventors: Heon Bok LEE, Dae Yong KIM, Wan Don KIM, Jeong Hyuk YIM, Won Keun CHUNG, Hyo Seok CHOI, Sang Jin HYUN
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Patent number: 11799004Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.Type: GrantFiled: March 15, 2022Date of Patent: October 24, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Heon Bok Lee, Dae Yong Kim, Wan Don Kim, Jeong Hyuk Yim, Won Keun Chung, Hyo Seok Choi, Sang Jin Hyun
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Publication number: 20220199790Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.Type: ApplicationFiled: March 15, 2022Publication date: June 23, 2022Inventors: Heon Bok LEE, Dae Yong KIM, Wan Don Kim, Jeong Hyuk YIM, Won Keun CHUNG, Hyo Seok CHOI, Sang Jin HYUN
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Patent number: 11296196Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.Type: GrantFiled: November 26, 2019Date of Patent: April 5, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Heon Bok Lee, Dae Yong Kim, Wan Don Kim, Jeong Hyuk Yim, Won Keun Chung, Hyo Seok Choi, Sang Jin Hyun
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Patent number: 10998412Abstract: A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.Type: GrantFiled: June 30, 2020Date of Patent: May 4, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Heon Bok Lee, Chul Sung Kim, Sang Jin Hyun
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Publication number: 20200343350Abstract: A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.Type: ApplicationFiled: June 30, 2020Publication date: October 29, 2020Inventors: Heon Bok Lee, Chul Sung Kim, Sang Jin Hyun
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Patent number: 10714579Abstract: A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.Type: GrantFiled: August 20, 2018Date of Patent: July 14, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Heon Bok Lee, Chul Sung Kim, Sang Jin Hyun
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Publication number: 20200176575Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.Type: ApplicationFiled: November 26, 2019Publication date: June 4, 2020Inventors: Heon Bok Lee, Dae Yong Kim, Wan Don Kim, Jeong Hyuk Yim, Won Keun Chung, Hyo Seok Choi, Sang Jin Hyun
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Patent number: 10557198Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate chuck, a shower head structure over the substrate chuck, and a gas distribution apparatus connected to the shower head structure. The gas distribution apparatus includes a dispersion container including a first dispersion space and a gas inlet section on the dispersion container. The gas inlet section includes a first inlet pipe including a first inlet path fluidly connected to the first dispersion space and a second inlet pipe including a second inlet path fluidly connected to the first dispersion space. The second inlet pipe surrounds at least a portion of a sidewall of the first inlet pipe.Type: GrantFiled: November 14, 2018Date of Patent: February 11, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Heon Bok Lee, Dae Yong Kim, Dong Woo Kim, Jun Ki Park, Sang Yub Ie, Sang Jin Hyun
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Publication number: 20190292664Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate chuck, a shower head structure over the substrate chuck, and a gas distribution apparatus connected to the shower head structure. The gas distribution apparatus includes a dispersion container including a first dispersion space and a gas inlet section on the dispersion container. The gas inlet section includes a first inlet pipe including a first inlet path fluidly connected to the first dispersion space and a second inlet pipe including a second inlet path fluidly connected to the first dispersion space. The second inlet pipe surrounds at least a portion of a sidewall of the first inlet pipe.Type: ApplicationFiled: November 14, 2018Publication date: September 26, 2019Inventors: Heon Bok Lee, Dae Yong Kim, Dong Woo Kim, Jun Ki Park, Sang Yub Ie, Sang Jin Hyun
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Publication number: 20190074362Abstract: A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.Type: ApplicationFiled: August 20, 2018Publication date: March 7, 2019Inventors: Heon Bok Lee, Chul Sung Kim, Sang Jin Hyun
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Patent number: 9324859Abstract: A split gate trench field effect transistor includes a gate electrode formed in a trench. A shield gate is formed in a trench below the gate electrode and surrounded by an insulating structure to float the shield electrode.Type: GrantFiled: October 16, 2014Date of Patent: April 26, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Heon-Bok Lee, In-Ho Yeo, Sae-Choon Oh, Suk-Kyun Lee, Jung-Ho Lee
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Publication number: 20150295080Abstract: A split gate trench field effect transistor includes a gate electrode formed in a trench. A shield gate is formed in a trench below the gate electrode and surrounded by an insulating structure to float the shield electrode.Type: ApplicationFiled: October 16, 2014Publication date: October 15, 2015Inventors: Heon-Bok Lee, In-Ho Yeo, Sae-Choon Oh, Suk-Kyun Lee, Jung-Ho Lee
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Publication number: 20150091084Abstract: A semiconductor device can include first and second vertical channel power MOSFET transistors that are arranged in a split-gate configuration in a semiconductor substrate. A groove can be in an active region between the first and second vertical channel power MOSFET transistors and a conductive pattern can be in the groove on the active region, where the conductive pattern can include a source contact for the first and second vertical channel power MOSFET transistors. A vertical Schottky semiconductor region can be embedded in the groove beneath the conductive pattern between the vertical channels.Type: ApplicationFiled: July 3, 2014Publication date: April 2, 2015Inventors: Heon-Bok Lee, In-ho Yeo, Sae-Choon Oh, Suk-Kyun Lee, Jung-ho Lee
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Patent number: 8629455Abstract: A power semiconductor device is provided. The power semiconductor device includes a source electrode disposed on a device activation region and widened in a direction toward a first side, a drain electrode arranged alternately with the source electrode on the device activation region and widened in a direction toward a second side facing the first side, an insulating layer disposed on the source electrode and the drain electrode and configured to include a plurality of via contacts contacting the source electrode and the drain electrode, a source electrode pad disposed in a first region on the insulating layer to be brought into contact with the source electrode, and a drain electrode pad disposed in a second region separated from the first region on the insulating layer and brought into contact with the plurality of via contacts contacting the drain electrode.Type: GrantFiled: July 27, 2012Date of Patent: January 14, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Seung Bae Hur, Heon Bok Lee, Ki Se Kim
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Publication number: 20130026485Abstract: A power semiconductor device is provided. The power semiconductor device includes a source electrode disposed on a device activation region and widened in a direction toward a first side, a drain electrode arranged alternately with the source electrode on the device activation region and widened in a direction toward a second side facing the first side, an insulating layer disposed on the source electrode and the drain electrode and configured to include a plurality of via contacts contacting the source electrode and the drain electrode, a source electrode pad disposed in a first region on the insulating layer to be brought into contact with the source electrode, and a drain electrode pad disposed in a second region separated from the first region on the insulating layer and brought into contact with the plurality of via contacts contacting the drain electrode.Type: ApplicationFiled: July 27, 2012Publication date: January 31, 2013Inventors: Seung Bae HUR, Heon Bok LEE, Ki Se KIM