Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.

Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.

Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.

Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.

Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.

Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.

Abstract: The present invention provides a thin film type solar cell and a method of manufacturing the same, the thin film type solar cell including: a substrate; a first transparent electrode provided on the substrate, a first separation part being formed in the first transparent electrode; a semiconductor layer formed on the first separation part and the first transparent electrode; a contact part formed to pass through the first transparent electrode and the semiconductor layer; a second transparent electrode formed in the contact part and on the semiconductor layer; and a second separation part formed to pass the semiconductor layer and the second transparent electrode, wherein a size of a grain of the contact part is smaller than a size of a grain of the first transparent electrode.

Abstract: A structure using a thin film type solar cell is disclosed, which comprises an external plate exposed to solar rays; a first adhesive layer provided on an opposite surface of a surface of the external plate, which is exposed to the solar rays; a thin film type solar cell provided on the first adhesive layer; a second adhesive layer provided on the thin film type solar cell; and a protection layer provided on the second adhesive layer, wherein the second adhesive layer is made of a colored adhesive material.

Abstract: A method of manufacturing copper wiring in a semiconductor device by forming a diffusion prevention film on a damascene pattern, forming a first copper film by a PVD method, forming a second copper film by a spin-on coating method, and forming a third copper film by a PVD or electrochemical deposition method. The method provides a good coverage characteristic and can prevent generation of voids etc., thus improving reliability of the device.

Abstract: The present invention is related to a copper wiring in a semiconductor device. Also, the invention describes a method of a copper wiring in a semiconductor device that can not only realize repeatability of a copper deposition process, but produce a thin copper film of superior film quality because the present invention can induce perfect surface absorption reaction in copper depositing by setting optimum deposition process conditions of a copper deposition equipment and establishing a MOCVD process technology using 1,1,1,5,5,5-hexafluoro-2,4-pentadionato(vinyltrimethoxysilane)-copper(I) compound as a copper precursor.

Abstract: A method of manufacturing copper wiring in a semiconductor device by forming a diffusion prevention film on a damascene pattern, forming a first copper film by a PVD method, forming a second copper film by a spin-on coating method, and forming a third copper film by a PVD or electrochemical deposition method. The method provides a good coverage characteristic and can prevent generation of voids etc., thus improving reliability of the device.

Abstract: A method for forming a metal wire using a titanium film in semiconductor device having contact holes according to the present invention provides excellent step coverage of a contact hole and a reliability and yield are improved. The method for forming titanium film comprises the steps of depositing a first titanium film on a wafer on conditions of a plasma density of less than 1010/cm3, applying a bias to the wafer and depositing a second titanium film on the first titanium film on conditions of a plasma density of more than 1011/cm3.

Abstract: A method for forming metal lines of a semiconductor device, which is capable of eliminating a problem in the planarization caused by the chemical vapor deposition method, namely, the formation of a thin film having a rough surface, an increase in the impurity concentration and an influence on an under layer. The method includes the steps of depositing an anti-diffusion metal layer over a structure formed with a metal contact, depositing a metal layer such as a copper film or aluminum film over the anti-diffusion metal layer in accordance with a physical vapor deposition method, annealing the resulting structure in a chamber maintained at a high temperature and high vacuum without losing the vacuum, thereby planarizing the structure.

Abstract: A method for forming a metal wiring of a semiconductor device, which is capable of requiring no additional thermal process, so that the number of processing steps is reduced, thereby reducing the manufacturing costs and improving the productivity of the semiconductor device. The method includes the steps of providing a semiconductor substrate, forming an interlayer insulating film provided with a contact hole on the semiconductor substrate, forming a first titanium film over the resulting structure obtained after the formation of the interlayer insulating film, forming a multilayer, which consists of a first titanium nitride film, a titanium oxide film and a second nitride film, over the first titanium film, forming a second titanium film over the second titanium nitride film, and forming a metal wiring on the second titanium film.