Abstract: A semiconductor device includes: a lower interlayer insulating layer; first and second active patterns on the lower interlayer insulating layer; a gate electrode on the first and second active patterns; a first source region on a first side of the gate electrode; a second source region on a second side of the gate electrode; a third source region on the first side of the gate electrode; a drain region on the second side of the gate electrode; a first contact adjacent to the gate electrode, and connected to the first and third source regions; a second contact adjacent to the gate electrode, and connected to the second source region; a third contact adjacent to the gate electrode, and connected to the drain region; a lower wiring layer inside the lower interlayer insulating layer; and a through via connecting the lower wiring layer with the first contact.

Abstract: The present disclosure provides a flame retarded slabstock polyurethane foam composition for flame lamination, which does not need to add a separate flame retardant additive because the polyurethane itself has flame retardancy. The flame retarded slabstock polyurethane foam composition for flame lamination according to the present disclosure, wherein the foam itself has flame retardancy by comprising methylene diphenyl diisocyanate (MDI), polymethylene diphenyl diisocyanate (PMDI), or a mixture thereof as an isocyanate compound, thereby obtaining an epochal effect that it does not need to add a separate flame retardant and an effect of solving a problem that physical properties of the conventional flame retarded slabstock polyurethane foam composition are reduced by adding a flame retardant.