Abstract: A high temperature aging system includes a battery cell tray stack having a structure in which battery cell trays are stacked in multiple stages therein, one or more tray racks located inside a high temperature aging chamber and each including a grid-shaped storage space in which the battery cell tray stack is located, a stacker crane configured to transport the battery cell tray to the grid-shaped storage space, a thermal imaging camera installed on the stacker crane configured to acquire thermal image temperature data on the battery cell trays loaded in the grid-shaped storage space, and a controller configured to control a temperature inside the high temperature aging chamber on the basis of the thermal image temperature data.

Abstract: A method of growing a Group-III nitride crystal includes forming a buffer layer on a silicon substrate and growing a Group-III nitride crystal on the buffer layer. The method of growing of a Group-III nitride crystal is executed through metal-organic chemical vapor deposition (MOCVD) during which a Group-III metal source and a nitrogen source gas are provided. The nitrogen source gas includes hydrogen (H2) and at least one of ammonia (NH3) and nitrogen (N2). At least a partial stage of the operation of growing the Group-III nitride crystal can be executed under conditions in which a volume fraction of hydrogen in the nitrogen source gas ranges from 20% to 40% and a temperature of the silicon substrate ranges from 950° C. to 1040° C.

Abstract: A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1?x?yN (0?x?0.1, 0.01?y?0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

Abstract: A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1?x?yN (0?x?0.1, 0.01?y?0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

Abstract: A method of growing a Group-III nitride crystal includes forming a buffer layer on a silicon substrate and growing a Group-III nitride crystal on the buffer layer. The method of growing of a Group-III nitride crystal is executed through metal-organic chemical vapor deposition (MOCVD) during which a Group-III metal source and a nitrogen source gas are provided. The nitrogen source gas includes hydrogen (H2) and at least one of ammonia (NH3) and nitrogen (N2). At least a partial stage of the operation of growing the Group-III nitride crystal can be executed under conditions in which a volume fraction of hydrogen in the nitrogen source gas ranges from 20% to 40% and a temperature of the silicon substrate ranges from 950° C. to 1040° C.

Abstract: A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids.

Abstract: A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids.

Abstract: There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

Abstract: There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

Abstract: There is provided a chemical vapor deposition apparatus, including: a reaction chamber including a support part having a wafer placed thereon and a gas supply part supplying a process gas to a reactive space formed above the support part to allow a thin film to be grown on a surface of the wafer; a heat exchanger changing a temperature of the process gas, supplied to the reactive space through the gas supply part, to allow the process gas to be maintained at a set temperature: and a controller regulating a flow rate of the process gas, and detecting a temperature difference between a temperature of the process gas and the set temperature to thereby control the heat exchanger to supply the process gas to the reactive space while the process gas is maintained at a reference temperature set according to each stage.

Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

Abstract: There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards. When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.

Abstract: There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

Abstract: There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards. When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.