Abstract: The method of forming a photoresist film in a semiconductor according to the present invention comprises a first step for coating a photoresist on a wafer, a second step for dispersing a nitrogen gas of high pressure on the wafer to eliminate microscopic riffle waves, pin holes, and peeling portions formed on the surface of the photoresist film, a third step for dispersing a dried nitrogen gas of high temperature to remove a solvent contained within the photoresist film and bake the photoresist film.

Abstract: A wafer conveyor system and controlling method therefor sends/receives a semiconductor wafer to/from a designated place includes a stocker for storing and delivering a package box with a plurality of wafers therein, a transferring path for connecting one stocker with another stocker, a carrier traveling along the transferring path for transporting the package box between the stockers, an automatic charging device placed to any one position of the transferring path for charging a battery loaded onto the carrier traveling along the transferring path when the battery is discharged, and a central control unit for controlling the driving of the stocker, transferring path, carrier and automatic charging device.

Abstract: The present invention discloses a plasma etching apparatus which can protect the surface of the wafer from a damage due to collisions among the etching ions and can also process a plurality of wafers only by one-time plasma generation. In the etching apparatus of the present invention, a plurality of wafers are loaded in the chamber by a plurality of wafer support members which are located vertically round the gas dispersion tube used as a cathode electrode, and magnetic field formation means are provided to form a magnetic field around each wafer.

Abstract: An ion-implanter, having variable ion-beam angle control, that includes: an ion source for decomposing a gas into a plasma gas; a magnetic analyzer for analyzing only desired ions; an accelerating tube for accelerating the analyzed ions with an energy required to implant them; a scanner for scanning the accelerated ions on the whole surface of a wafer; a Faraday box provided between the scanner and the wafer and connected to an ammeter for measuring the amount of the implanted ions; and an ion-beam angle regulator for regulating the angle of an ion beam which passes the Faraday box.