Abstract: A semiconductor device includes a substrate, first and second active patterns extending in a first horizontal direction on the substrate, first and second gate electrodes extending in a second horizontal direction on the first and second active patterns, respectively, a first trench extending in the second horizontal direction between the first and second gate electrodes and separating the first and second active patterns, at least part of the first trench is in the substrate, an active cut extending along sidewalls and a bottom surface of the first trench and contacting each of the first and second active patterns, a second trench on the active cut in the first trench, and a flowable material layer in at least part of the second trench, the flowable material layer including a flowable insulating material and not being in contact with each of the substrate and the first and second active patterns.

Abstract: A solar cell is provided that increases a rate of sunlight absorbed into a photoelectric conversion layer by forming a transparent conductive layer into a plurality of layers having different oxygen contents and different light absorption coefficients, and a manufacturing method thereof. The solar cell includes a substrate, a transparent conductive layer, and a photoelectric conversion layer. The transparent conductive layer includes a first layer having a first light absorption coefficient, and a second layer formed on the first layer and having a second light absorption coefficient higher than the first light absorption coefficient.

Abstract: A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.

Abstract: A thin-film solar cell having a first solar cell layer with a plurality of unit cells including a photoelectric conversion layer that are connected in series; a second solar cell layer with a plurality of unit cells including a photoelectric conversion layer that are connected in series, and that has band gap energy different from the first solar cell layer and a threshold voltage coincident with the first solar cell layer; and an electrode connector, that connects the first solar cell layer with the second solar cell layer in parallel.

Abstract: The present invention relates to a photovoltaic device through a lateral crystallization process and a fabrication method thereof, and in particular to a high efficiency solar cell module and a fabrication method thereof. The present invention comprises a first solar cell having an amorphous silicon layer formed on a first substrate, a second solar cell having a microcrystalline silicon semiconductor layer formed on a second substrate, and a junction layer junctioning the first solar cell and the second solar cell, making it possible to obtain a solar cell with high efficiency, low fabricating costs, high product characteristic, and high reliability.

Abstract: The present invention relates to a high efficiency solar cell and a manufacturing method thereof. The high efficiency solar cell of the present invention comprises a lower solar cell layer comprising a single crystalline silicon-based pn thin film; an upper solar cell layer stacked on the upper portion of the lower solar cell layer and comprising an amorphous silicon-based pin thin film; and a glass substrate formed on the upper portion of the upper solar cell layer to receive sunlight. According to the present invention, it has an effect that a low-cost high efficiency solar cell can be manufactured.

Abstract: A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.

Abstract: Disclosed are a method for manufacturing a thin-film type solar cell and a thin-film type solar cell obtained thereby that uses a direct printing method and reduces the frequency of a cutting process.

Abstract: A thin-film type solar cell module having a reflective media layer capable of optionally transmitting light through intervals formed on the reflective media layer and a method of fabricating the same are described.

Abstract: A photovoltaic device module and a fabrication method thereof are disclosed. There are provided a solar cell module structure effective to prevent the performance of the overall module from being degraded when photoelectric conversion efficiency of a specific portion cell is degraded in a solar cell module in which solar cells are integrated, and a fabrication method thereof. More particularly, there are provided a module structure having two terminal wirings, in which one of them is formed by selecting and connecting at least two unit cells from a plurality of unit cells electrically connected and the other is formed by selecting and connecting at least two unit cells differentiated from the said selected unit cells., and a fabrication method thereof.

Abstract: The present invention relates to a thin-film solar cell and a fabrication method thereof, the solar cell having a structure that a glass substrate, a transparent conductive oxide, a multi-junction solar cell layer and an electrode layer are stacked, wherein a first solar cell layer and a second solar cell layer, which are in a multi-junction, are electrically connected with each other in parallel, and one or more unit cells connected in parallel are grouped to be electrically connected with each other in series. According to the present invention, a thin-film solar cell having a unit cell in a structure that two solar cell layers having different characteristics are connected with each other in parallel, and having a structure that several unit cells are connected with each other in series, can achieve higher output and efficiency than a thin-film solar cell having a structure that several solar cell layers are connected in series.

Abstract: The present invention relates to a photovoltaic conversion apparatus including a by-pass diode and a manufacturing method thereof. The photovoltaic conversion apparatus of the present invention comprises at least one unit solar cell module configured of at least one unit solar cell; and a by-pass solar cell module including at least one solar cell electrically connected to the unit solar cell to by-pass current. According to the present invention, a photovoltaic conversion apparatus having high photoelectric conversion efficiency can be manufactured. Also, the photovoltaic conversion apparatus will contribute to earths environmental conservation as the next clean energy source and can be directly applied to private facilities, public facilities, military facilities, etc., to create enormous economic value.

Abstract: The present invention provides a solar cell that increases a rate of sunlight absorbed into a photoelectric conversion layer by forming a transparent conductive layer into a plurality of layers having different oxygen contents and different light absorbing coefficients and a manufacturing method thereof. The solar cell of the present invention includes a substrate, a transparent conductive layer, and a photoelectric conversion layer, wherein the transparent conductive layer comprises a first layer having a first light absorbing coefficient; and a second layer that is formed on the first layer and has a second light absorbing coefficient higher than the first light absorbing coefficient.

Abstract: The present invention discloses a thin-film type solar cell including another upper transparent conductive layer between a silicon semiconductor layer and an upper transparent conductive layer, and a manufacturing method thereof. At this time, the silicon based semiconductor layer used may be formed of at least one amorphous silicon based (p/i/n) thin film or may be formed as a tandem type silicon based semiconductor layer formed of the amorphous silicon based (p/i/n) thin film, an intermediate transparent conductive layer, and a microcrystalline silicon based thin film.

Abstract: A thin-film solar cell of the present invention comprises a first solar cell layer that a plurality of unit cells including a photoelectric conversion layer are connected in series; a second solar cell layer that a plurality of unit cells including a photoelectric conversion layer are connected in series, which has band gap energy being different from the first solar cell layer and a threshold voltage being coincident with the first solar cell layer; and an electrode connector, which connects the first solar cell layer with the second solar cell layer in parallel. The thin-film solar cell of the present invention provides a solar cell structure and a method of manufacturing the same, which is capable of increasing the efficiency by increasing the maximum output of the thin film solar cell formed of both the solar cell layers having the different characteristics.

Abstract: A photoelectric conversion device includes at least one p-type semiconductor layer made of amorphous like hydrogenated carbon film or diamond like carbon (DLC) film doped with acceptor impurities such as boron (B). In a solar cell having a photoelectric conversion region, hydrogenated carbon is used as substances forming a p-type semiconductor layer, making it possible to provide a solar cell with high photoelectric conversion efficiency.

Abstract: A thin film bulk acoustic resonator device is provided for minimizing phase noise by controlling resonance frequency. The thin film bulk acoustic resonator device comprises: a fixed body having a first electrode; a driving body having a second electrode installed to be adjacent to the fixed body and moved toward the fixed body due to voltage applied to the first and second electrodes; and a thin film bulk acoustic resonator for controlling the resonance frequency according to change of stress generated due to the movement of the driving body.

Abstract: Provided are a thin film bulk acoustic resonator consisting of a single chip for minimizing phase noise by controlling resonance frequency and a voltage controlled oscillator using the same. The thin film bulk acoustic resonator comprises: a fixed body having a first electrode; a driving body having a second electrode installed to be adjacent to the fixed body and moved toward the fixed body due to voltage applied to the first and second electrodes; and a thin film bulk acoustic resonator for controlling the resonance frequency according to change of stress generated due to the movement of the driving body.

Abstract: A material sensing sensor using a thin film bulk acoustic resonator having a compact size and a high material measurement sensitivity is formed together with other material sensing sensors in an array form, and integrated with a signal processor on the same board, to thereby precisely sensing a plurality of materials, and a material sensing module. The material sensing sensor using a thin film bulk acoustic resonator (TFBAR) includes: a first thin film bulk acoustic resonator for generating a first resonant frequency according to the amount and/or thickness of a target material; and a reference thin film bulk acoustic resonator for generating a reference resonant frequency.

Abstract: Method for fabricating a ferroelectric capacitor, including the steps of (1) foxing an etch stopper formed of any one of TiO2 and RuO2 a lower electrode, a ferroelectric layer, an upper electrode, and an etch mask layer formed of any one of Ti, Ru and Cr in succession on a substrate, (2) patterning the etch mask layer to a required form, (3) using the etch mask layer as a mask in etching the upper electrode, the ferroelectric layer, and the lower electrode at a time, to expose the etch stopper, and (4) removing the etch stopper and the etch mask layer, whereby allowing a simple and easy fabrication of the capacitor regardless of presence of steps.