Abstract: An electroluminescent display device is provided. The device includes a substrate on which a display area displaying an image and a non-display area surrounding the display area are defined. The device includes a thin film transistor and a light-emitting diode disposed in the display area on the substrate and electrically connected to each other. The device further includes an encapsulation part covering the thin film transistor and the light-emitting diode, a touch sensor part on the encapsulation part, and first and second crack stoppers disposed in the non-display area on the substrate. The second crack stopper is disposed between the first crack stopper and the display area. The first crack stopper includes a first pattern that is formed through a same process as an electrode layer of the touch sensor part.

Abstract: An electroluminescent display device is provided. The device includes a substrate on which a display area displaying an image and a non-display area surrounding the display area are defined. The device includes a thin film transistor and a light-emitting diode disposed in the display area on the substrate and electrically connected to each other. The device further includes an encapsulation part covering the thin film transistor and the light-emitting diode, a touch sensor part on the encapsulation part, and first and second crack stoppers disposed in the non-display area on the substrate. The second crack stopper is disposed between the first crack stopper and the display area. The first crack stopper includes a first pattern that is formed through a same process as an electrode layer of the touch sensor part.

Abstract: An array substrate includes a gate line on a substrate including a pixel region, the gate line extending in one direction; a gate electrode in the pixel region and extending from the gate line; a gate insulating layer on the gate line and the gate electrode; a data line on the gate insulating layer and crossing the gate line to define the pixel region; an oxide semiconductor layer on the gate insulating layer and having three ends, the oxide semiconductor layer corresponding to the gate electrode; an etch stopper on the oxide semiconductor layer to expose the three ends of the oxide semiconductor layer; a source electrode contacting two ends of the three ends of the oxide semiconductor layer and extending from the data line; and a drain electrode contacting one end of the three ends of the oxide semiconductor layer and spaced apart from the source electrode.