Abstract: A thickness measurement device includes: a terahertz wave emitter emitting terahertz waves toward an edge of the second layer; a terahertz wave detector detecting, with reference to a reflected location of the terahertz waves, a first terahertz wave (R1) reflected from a surface of the second layer, a second terahertz wave (R2) reflected from an exposed surface of the first layer, and a third terahertz wave (R3) reflected from an interface between the first layer and the second layer; and a calculator calculating an index of refraction of the second layer based on a detection time difference (?t1) between a detection time of the first terahertz wave (R1) and a detection time of the second terahertz wave (R2) and a detection time difference (?t2) between the detection time of the first terahertz wave (R1) and a detection time of the third terahertz wave (R3).

Abstract: A plasma process monitoring apparatus using terahertz waves is provided. A plasma process monitoring apparatus using terahertz waves may comprise: a first monitoring module disposed in a direction parallel to the width direction of a wafer on the outside of a plasma chamber in which the wafer is introduced and monitoring plasma formed inside the plasma chamber during a plasma process for forming a film on the wafer by using terahertz waves; and a second monitoring module disposed outside the plasma chamber in the thickness direction of the wafer so as to face the wafer and monitoring the wafer on which a film is formed on a surface through the plasma process by using the terahertz waves.

Abstract: A plasma process monitoring apparatus using terahertz waves is provided. A plasma process monitoring apparatus using terahertz waves may comprise: a first monitoring module disposed in a direction parallel to the width direction of a wafer on the outside of a plasma chamber in which the wafer is introduced and monitoring plasma formed inside the plasma chamber during a plasma process for forming a film on the wafer by using terahertz waves; and a second monitoring module disposed outside the plasma chamber in the thickness direction of the wafer so as to face the wafer and monitoring the wafer on which a film is formed on a surface through the plasma process by using the terahertz waves.

Abstract: A thickness measuring device of the present invention includes a supporter which supports a specimen, an emission unit which emits an electromagnetic wave in a direction toward the specimen, a chamber which surrounds the specimen, a receiving unit which receives an electromagnetic wave output in a direction in which the chamber is positioned, and a control unit which receives a signal from the receiving unit and calculates a thickness of the specimen. At least a part of the chamber transmits a part of the electromagnetic wave and reflects the remaining part of the electromagnetic wave. The receiving unit receives a first electromagnetic wave having a first peak and a second electromagnetic wave having a second peak. The first peak occurs at a first time point, the second peak occurs at a second time point, and a difference between the first time point and the second time point is a first period or more.

Abstract: A thickness measuring device of the present invention includes a supporter which supports a specimen, an emission unit which emits an electromagnetic wave in a direction toward the specimen, a chamber which surrounds the specimen, a receiving unit which receives an electromagnetic wave output in a direction in which the chamber is positioned, and a control unit which receives a signal from the receiving unit and calculates a thickness of the specimen. At least a part of the chamber transmits a part of the electromagnetic wave and reflects the remaining part of the electromagnetic wave. The receiving unit receives a first electromagnetic wave having a first peak and a second electromagnetic wave having a second peak. The first peak occurs at a first time point, the second peak occurs at a second time point, and a difference between the first time point and the second time point is a first period or more.

Abstract: According to an aspect of the invention, a thickness measuring device comprising: an emission unit emitting an electromagnetic wave toward a specimen, a reception unit receiving an electromagnetic wave output from a direction in which the specimen is positioned; and a control unit calculating a thickness of the specimen by receiving a signal from the reception unit, wherein when the specimen has a first thickness, the reception unit receives a first electromagnetic wave, and when the specimen has a second thickness, the reception unit receives a second electromagnetic wave, wherein the first electromagnetic wave has a first peak value at a first time point, and the second electromagnetic wave has a second peak value at a second time point, and wherein when the first thickness is greater than the second thickness, the first peak value is smaller than the second peak value, may be provided.

Abstract: The present invention relates to a process for preparing polyketone with improved catalytic activity and intrinsic viscosity, and specifically a process for preparing polyketone, using a mixed solvent of 40 to 60 mol % acetic acid and 40 to 60 mol % water, as a liquid medium, and the precursor of palladium chloride-1,3-bis[di(methoxyphenyl)phosphino]propane, as a catalyst component.

Abstract: The present invention relates to a process for preparing polyketone with improved catalytic activity and intrinsic viscosity, and specifically a process for preparing polyketone, using a mixed solvent of 40 to 60 mol % acetic acid and 40 to 60 mol % water, as a liquid medium, and the precursor of palladium chloride-1,3-bis[di(methoxyphenyl)phosphino]propane, as a catalyst component.

Abstract: An antistatic coating composition, a manufacturing process thereof, and an antistatic and non-glare picture display screen are disclosed. The manufacturing process for the antistatic coating composition comprises steps of forming a silicate solution by partially hydrolysing a silicate substance, forming a conductive solution containing a conductive material which is formed by doping a molecular water-containing oxide or hydroxide of a soluble inorganic compound with an inorganic second compound, the second inorganic compound and the soluble inorganic compound being different, mixing the silicate solution and the conductive solution, and subjecting the mixture to a hydrolysis and to a polycondensation. According to the present invention, the antistatic and non-glare effects are greatly promoted.