Patents by Inventor Her S. Chen

Her S. Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrates for the growth of 3C-silicon carbide
    Patent number: 5492752
    Abstract: A substrate for the growth of monocrystalline .beta.-SiC is formed by providing a body of monocrystalline hexagonal material having a planar surface with a lattice parameter that is within .+-.5% of the lattice parameter of 6H.alpha.-SiC in the basal plane and growing a body of monocrystalline cubic material on the surface to provide a planar cubic material surface that is without grain boundaries, subgrain boundaries, double positioning boundaries, and pits. The cubic material, for example TiC, ZrC, HfC, or TiN, has a rock salt structure and a lattice parameter within .+-.5% of the lattice parameter of .beta.-SiC. Monocrystalline .beta.-SiC can be nucleated and grown on the surface of the cubic material.
    Type: Grant
    Filed: June 25, 1993
    Date of Patent: February 20, 1996
    Assignee: Oregon Graduate Institute of Science and Technology
    Inventors: James D. Parsons, Ajay K. Chaddha, Her S. Chen, Jin Wu