Abstract: A film bulk acoustic resonator and fabrication method are provided. The film bulk acoustic resonator includes a carrier substrate, a support layer bonded to the carrier substrate and enclosing a cavity exposing a portion of the carrier substrate, a piezoelectric stacked-layer structure located above the support layer to cover the cavity and including a first electrode, a piezoelectric layer, and a second electrode stacked in sequence from bottom to top, and first and second bumps disposed at a boundary of an effective resonance region where the first electrode, the piezoelectric layer, and the second electrode above the cavity overlap each other in a direction perpendicular to a surface of the piezoelectric layer. The first and second bumps are disposed at sides of the first and second electrodes, respectively. At least one of projections of the first and second bumps on a plane where the piezoelectric layer is located includes a ring shape that includes an unclosed or closed ring.

Abstract: A microelectromechanical systems (MEMS) device includes: a surface acoustic wave (SAW) filter including an interdigital transducer; a first structural layer disposed over the SAW filter; and a bulk acoustic wave (BAW) filter disposed over the first structural layer. The BAW filter includes a supporting substrate, an acoustic reflective structure disposed over the supporting substrate, and a piezoelectric stack structure disposed over the acoustic reflective structure. The piezoelectric stack structure includes a first electrode, a piezoelectric layer, and a second electrode. The first structural layer includes a first cavity covered by an effective resonance region of the piezoelectric stack structure and the interdigital transducer of the SAW filter.

Abstract: A fabrication method of a MEMS device includes providing a logic circuit chip including a substrate and a CMOS circuit disposed on the substrate, forming a first structural layer on the logic circuit chip, and forming a first isolation groove on the first structural layer; providing a BAW filter including a supporting substrate, a support layer formed on the supporting substrate, and a piezoelectric stack structure, the piezoelectric stack structure forming a second cavity with the supporting substrate and the support layer, and piezoelectric stack structure including a second electrode, a piezoelectric layer, and a first electrode that are sequentially stacked; and bonding the BAW filter to the first structural layer on the logic circuit chip, such that the first isolation groove is disposed between the logic circuit chip and the BAW filter to form a first cavity where an effective resonance region of the piezoelectric stack structure is located.

Abstract: Thin-film bulk acoustic resonator, forming method and filter are provided. The thin-film bulk acoustic resonator includes: a first substrate, an upper surface of the first substrate being provided with a first cavity; a piezoelectric stack structure, disposed on the upper surface of the first substrate and covering the first cavity, the piezoelectric stack structure including a second electrode, a piezoelectric layer and a first electrode which are sequentially stack from bottom to top; a groove, including a first groove and/or a second groove, the first groove penetrating through the first electrode and extending into or penetrating through the piezoelectric layer, the second groove penetrating the second electrode and extending into or penetrating through the piezoelectric layer; and a reinforcement layer, disposed on at least one side of the first electrode or the second electrode at a bottom of the groove.

Abstract: A thin-film bulk acoustic resonator (FBAR) apparatus includes a lower dielectric layer including a first cavity; an upper dielectric layer including a second cavity, wherein the upper dielectric layer is on the lower dielectric layer; and an acoustic resonance film that is positioned between and separating the first and the second cavities. The acoustic resonance film includes a lower electrode layer, an upper electrode layer, and a piezoelectric film that is sandwiched between the lower and upper electrode layers. A plan view of the first and the second cavities overlap to form an overlapped region having a polygonal shape without parallel sides.

Abstract: A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing method are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film of this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

Abstract: The present disclosure provides a film piezoelectric acoustic resonator. The resonator includes an upper electrode, a piezoelectric layer and a lower electrode which are stacked sequentially from a top to a bottom. A projection of the effective resonance region along a direction of the piezoelectric layer is a hexagon. The hexagon has a first side with a longest length, a second side opposite to the first side, a third side with a shortest length, and a fourth side opposite to the third side. A portion of the upper electrode extending out of the effective resonance region through a first boundary of the effective resonance region is defined as an upper electrode led-out portion; a portion of the lower electrode extending out of the effective resonance region through a second boundary of the effective resonance region is defined as a lower electrode led-out portion.

Abstract: The present disclosure provides a film bulk acoustic resonator and a method for fabricating the film bulk acoustic resonator. The resonator includes a carrier substrate; a support layer bonded on the carrier substrate, where the support layer encloses a first cavity exposing the carrier substrate; a piezoelectric stacked structure covering the first cavity, where the piezoelectric stacked structure includes a first electrode, a piezoelectric layer, and a second electrode which are stacked sequentially from a bottom to a top; and protrusions disposed at a boundary of an effective resonance region, where the protrusions are disposed on an upper surface or a lower surface of the piezoelectric stacked structure; or a part of the protrusions is disposed on the upper surface of the piezoelectric stacked structure, and another part of the protrusions is disposed on the lower surface of the piezoelectric stacked structure.

Abstract: A composite substrate, a surface acoustic wave resonator and their fabricating method are provided. The fabricating method of the composite substrate includes: providing a first substrate; forming a liner layer including at least a polycrystalline material layer on the first substrate; depositing a piezoelectric sensing film for generating acoustic resonance on the polycrystalline material layer by a physical or chemical deposition method; and performing recrystallization annealing treatment on the piezoelectric sensing film, to make the piezoelectric sensing film reach a polycrystalline state. The recrystallization annealing treatment includes a heating process and a cooling process, and the heating process includes heating the piezoelectric sensing film to make the piezoelectric sensing film reach a molten state.

Abstract: A thin film piezoelectric acoustic wave resonator and a manufacturing method therefor, and a filter. The film piezoelectric acoustic wave resonator includes: a first base, a first electrode, a piezoelectric plate body, a second electrode and an isolation cavity, wherein the first electrode, the piezoelectric plate body and the second electrode are arranged on a first surface of the first base and are stacked sequentially from top to bottom; the first electrode, the piezoelectric plate body and the second electrode are provided with an overlapping region in a direction perpendicular to the surface of the piezoelectric plate body; in the overlapping region, a gap is formed between the piezoelectric plate body and the first electrode; the isolation cavity surrounds the periphery of the piezoelectric plate body; and the gap communicates with the isolation cavity.

Abstract: In this invention, an imaging module and a method for fabricating it are provided. By designing first and second electrodes, a movable part of the second electrode is connected to the flexible part. Upon a voltage being applied to the first and second electrodes, the second electrode moves toward the first electrode, resulting in a stretch and hence a shape change of a flexible part. As a result, the imaging module undergoes a change in terms of focal length, amount of admitted light and/or admissible range of angle of incident light. In particular, a motion controller incorporating the first and second electrodes can be easily fabricated by semiconductor processes to a very small size, making the imaging module very suitable for use in electronic terminals such as mobile phones with confined enclosure spaces.

Abstract: A thin film piezoelectric acoustic wave resonator and a manufacturing method therefor, and a filter. The thin film piezoelectric acoustic wave resonator includes: a first base, an upper electrode, a piezoelectric plate body, a lower electrode and an isolation cavity. The upper electrode, the piezoelectric plate body and the lower electrode are arranged on an upper surface of the first base and are stacked sequentially from top to bottom. The upper electrode, the piezoelectric plate body and the lower electrode have an overlapping region in a direction perpendicular to the surface of the piezoelectric plate body, in which a first gap is formed between the piezoelectric plate body and the upper electrode, and a second gap is formed between the piezoelectric plate body and the lower electrode. The isolation cavity surrounds the periphery of the piezoelectric plate body and connects the first and second gaps together. At least one connecting bridge is arranged between the piezoelectric plate body and the base.

Abstract: The present invention discloses a composite substrate for manufacturing an acoustic wave resonator and a Surface Acoustic Wave (SAW) resonator, and a manufacturing method thereof.

Abstract: A semiconductor device includes a first substrate having a first surface and a second surface opposite to the first surface, a shallow trench isolation in the first substrate, the shallow trench isolation having a first depth, the first depth being a distance from a bottom of the shallow trench isolation to the first surface of the first substrate, a transistor on the first surface of the first substrate, a first dielectric cap layer covering the first surface of the first substrate, a first interconnect structure on the first dielectric cap layer, a carrier substrate bonded to the first substrate through the first dielectric cap layer, a second dielectric cap layer on the second surface of the first substrate; and a through silicon via extending through the second dielectric cap layer, the shallow trench isolation, and the first dielectric cap layer, and connected to the first interconnect structure.

Abstract: A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing method are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film of this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

Abstract: A thin-film bulk acoustic resonator (FBAR) apparatus includes a lower dielectric layer including a first cavity; an upper dielectric layer including a second cavity, wherein the upper dielectric layer is on the lower dielectric layer; and an acoustic resonance film that is positioned between and separating the first and the second cavities. The acoustic resonance film includes a lower electrode layer, an upper electrode layer, and a piezoelectric film that is sandwiched between the lower and upper electrode layers. A plan view of the first and the second cavities overlap to form an overlapped region having a polygonal shape without parallel sides.

Abstract: A resonator may include a first dielectric member, a second dielectric member, and a composite member. The first dielectric member may have a first cavity. The composite member may include a piezoelectric layer and may overlap at least one of the first dielectric member and the second dielectric member. At least one of the second dielectric member and the composite member may have a second cavity. The piezoelectric layer may be positioned between the first cavity and the second cavity. A projection of the first cavity in a direction perpendicular to a flat side of the first dielectric member and a projection of the second cavity in the direction may intersect each other to form a polygon. No two edges of the polygon may be parallel to each other.

Abstract: A method for manufacturing a semiconductor apparatus includes: on a base substrate, forming an isolation trench layer, a first dielectric layer, a lower electrode layer and a second dielectric layer; forming a piezoelectric film and an upper electrode layer in an opening in the second dielectric layer; forming a third dielectric layer; forming a first cavity in the third dielectric layer to expose at least part of the upper electrode layer; bonding a first assistant substrate to seal the first cavity; removing a part of the base substrate to expose the isolation trench layer; forming a fourth dielectric layer on a side of the isolation trench; and etching through the fourth dielectric layer, the isolation trench layer, the first dielectric layer to form a second cavity beneath the lower electrode layer, plan views of the first and second cavities providing an overlapped region having a polygon shape without parallel sides.

Abstract: A method for manufacturing a semiconductor apparatus includes: on a base substrate, forming an isolation trench layer, a first dielectric layer, a first metal connecting layer, a piezoelectric film, and an upper electrode layer; forming an acoustic resonance film by patternizing the piezoelectric film, the upper electrode layer, and the first metal connecting layer; above the base substrate, forming a second dielectric layer and a third dielectric layer; forming a first cavity through the third and second dielectric layers, and the protection layer; removing a part of the base substrate to expose the isolation trench layer; forming a fourth dielectric layer under the isolation trench layer; and forming a second cavity through the fourth dielectric layer, the isolation trench layer, and the first dielectric layer, plan views of the first and second cavities forming an overlapped region having a polygon shape without parallel sides.

Abstract: A resonator may include a first dielectric member, a second dielectric member, a composite member, a first sealer, and a second sealer. The first dielectric member may have a first cavity. The second dielectric member may have a second cavity. The composite member may include a piezoelectric layer and may be positioned between the first cavity and the second cavity. The first sealer may be positioned between two portions of the first dielectric member. The first cavity may be positioned between the first sealer and the composite member. The second sealer may be positioned between two portions of the second dielectric member. The second cavity may be positioned between the second sealer and the composite member.