Abstract: Apparatus and method for providing a velocity flow profile near a reference surface. A measuring device utilizes a plurality of thermojunction pairs to provide the velocity flow profile in accordance with behavior of a gas relative to a constant thickness strut which stands vertically from the reference surface such that the span is normal to the surface, and the chord is parallel to the surface along the initial flow direction. Each thermojunction is carried on either side of a heater formed on a measuring surface in a constant thickness portion of a strut. Additionally, each thermojunction of a given pair is located at a predetermined height from the reference surface. Gas velocity data obtained from temperature differentials from one side of the heater to the other at each successive height is utilized to generate the velocity and turbulence level profiles.

Abstract: Sections are cut from a SiC platelet such that the sections have a-faces parallel to the c-axis of the SiC platelet. The sections serve as substrates for the growth of SiC layers by attaching the substrates to a body which is then placed in a chamber and the chamber evacuated. Hydrogen is then admitted, and the body on which the substrates are mounted is heated to produce a temperature profile such that the subsequent admission of a carbon containing chlorosilane gas or a mixture of a chlorosilane gas and a hydrocarbon gas will cause free silicon to be deposited at one end of the body while SiC crystals grow on the substrates which are in a preferred temperature range. Dopant gases, either p-type or n-type, can be admitted with the chlorosilane or hydrocarbon gas to produce the desired type of semiconductor.