Abstract: A metallization composite comprises a refractory metal, nickel, and copper. The refractory metal is preferably titanium (Ti), but other suitable refractory metals such as zirconium and hafnium can also be utilized. An additional optional layer of gold can overlie the copper. The metallization composite is used to connect a solder contact to a semiconductor substrate.

Abstract: A memory system is provided wherein extended injection-limited programming techniques attain a substantially uniform programming behavior from an ensemble of fabricated devices or cells to provide the maximum obtainable voltage threshold shift within a minimum time period. In order to produce these desired results, a floating gate of a device is charged by applying to the control gate of the device a first voltage during a portion of this time period which produces an accelerating field in a dielectric layer disposed adjacent to the floating gate and then applying to the control gate during the remaining portion of this time period a second voltage of greater magnitude than that of the first voltage prior to or when the accumulation of charge on the floating gate causes a retarding field to be established in the dielectric layer.