Patents by Inventor Herbert D. Hendricks

Herbert D. Hendricks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus for linewidth reduction in distributed feedback or distributed Bragg reflector semiconductor lasers using vertical emission
    Patent number: 6075805
    Abstract: The linewidth of a distributed feedback semiconductor laser or a distributed Bragg reflector laser having one or more second order gratings is reduced by using an external cavity to couple the vertical emission back into the laser. This method and device prevent disturbance of the main laser beam, provide unobstructed access to laser emission for the formation of the external cavity, and do not require a very narrow heat sink. Any distributed Bragg reflector semiconductor laser or distributed feedback semiconductor laser that can produce a vertical emission through the epitaxial material and through a window in the top metallization can be used. The external cavity can be formed with an optical fiber or with a lens and a mirror or grating.
    Type: Grant
    Filed: October 27, 1998
    Date of Patent: June 13, 2000
    Assignee: The United States of American as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Anthony L. Cook, Herbert D. Hendricks
  • Method and apparatus for linewidth reduction in distributed feedback or distributed bragg reflector semiconductor lasers using vertical emission
    Patent number: 5828688
    Abstract: The linewidth of a distributed feedback semiconductor laser or a distributed Bragg reflector laser having one or more second order gratings is reduced by using an external cavity to couple the vertical emission back into the laser. This method and device prevent disturbance of the main laser beam, provide unobstructed access to laser emission for the formation of the external cavity, and do not require a very narrow heat sink. Any distributed Bragg reflector semiconductor laser or distributed feedback semiconductor laser that can produce a vertical emission through the epitaxial material and through a window in the top metallization can be used. The external cavity can be formed with an optical fiber or with a lens and a mirror or grating.
    Type: Grant
    Filed: October 26, 1995
    Date of Patent: October 27, 1998
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Anthony L. Cook, Herbert D. Hendricks