Abstract: Disclosed is a method for depositing a film onto a substrate, with a sputter deposition process wherein the sputter deposition process is a direct current sputter deposition wherein the film consists of at least 90 wt-% of an inorganic material having semiconductor properties whereby the film of the inorganic material M2 is directly deposited as crystalline structure, so that at least 50 wt-% of the deposited film has a crystalline structure wherein the source material (target) used for the sputter deposition consists of at least 80 wt-% of the inorganic material M2. wherein the inorganic material is selected from a group including binary, ternary, and quaternary compounds including sulphur, selenium, tellurium, indium, and/or germanium.

Abstract: The invention relates to a nickel mixed hydroxide with Ni as the main element and with a layer structure, comprising at least one element Ma from the group comprising Fe, Cr, Co, Ti, Zr and Cu which is present in two different oxidation states which differ by one electron in terms of the number of outer electrons; at least one element Mb from the group comprising B, Al, Ga, In and RE (rare earth metals) present in the trivalent oxidation state; optionally at least one element Mc from the group comprising Mg, Ca, Sr, Ba and Zn present in the divalent oxidation state; apart from the hydroxide, at least one additional anion from the group comprising halides, carbonate, sulfate, oxalate, acetate, borate and phosphate in a quantity sufficient to preserve the electroneutrality of the mixed hydroxide; and water of hydration in a quantity which stabilizes the relevant structure of the mixed hydroxide.