Abstract: A method and apparatus for the production of r-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage.

Abstract: The present invention provides for a method and articles produced from this method for eutectically bonding together single crystal elements, such as sapphire, to form a strong bond therebetween which can withstand high temperatures and chemical attack. The eutectic bonding mixture of the present invention can include a Group IIIA compound, such as yttria.

Abstract: An electrostatic wafer-holding chuck includes first and second dielectric plates formed of single crystal aluminum oxide and at least one electrode disposed within a recess formed in the first dielectric plate. The second dielectric plate has a top wafer-supporting surface that has a fluid distribution network formed therein. The fluid distribution network channels a heat transfer medium to the backside of the wafer. When the first and second dielectric plates are assembled, the first dielectric plate is disposed contiguous to the second dielectric plate and then are diffusively joined together to form a monolithic, hermetically-sealed electrostatic chuck.

Abstract: The edge-defined, film-fed growth technique process is modified to produce a thin ribbon of bi-crystalline sapphire wherein the grain boundary is an essentially straight boundary and the angle is predetermined by selective cutting of the two seeds which are placed closely together during growth. The angle selection is optimized based on the superconducting material to be deposited and the application intended. After the ribbon is pulled, the ribbon is processed by cutting an appropriate section therefrom with the grain boundary. The substrate is polished and the high Tc superconducting material is deposited thereon to produce devices which rely on weak link Josephson junctions.

Abstract: In a low angle silicon sheet growth process, a puller mechanism advances a seed crystal and solidified ribbon from a cooled growth zone in a melt at a low angle with respect to the horizontal. The ribbon is supported on a ramp adjacent the puller mechanism. Variations in the vertical position of the ribbon with respect to the ramp are isolated from the growth end of the ribbon by (1) growing the ribbon so that it is extremely thin, preferably less than 0.7 mm, (2) maintaining a large growth zone, preferably one whose length is at least 5.0 cm, and (3) spacing the ramp from the growth zone by at least 15 cm.

Abstract: An improved method of growing ribbon-shaped crystalline bodies is disclosed. The method comprises the step of pulling the body from a melt pool through a very narrow gap as the body cools through a range of temperatures at which significant plastic deformation can occur so as to reduce the amount of buckling the body otherwise experienced due to transverse residual stress. The method in its preferred form utilizes an improved guidance mechanism for use with apparatus for growing ribbon-shaped bodies. The mechanism comprises a pair of heat-conductive plates rigidly positioned with respect to the melt pool.