Abstract: Vertical transistor structure with an epitaxially applied layer of the second conduction type on a semiconductor substrate of the first conduction type, in which a tray is formed by insulating walls of the first conduction type extending into the semiconductor substrate. A first highly doped buried layer of the second conduction type in which a second buried layer of the first conduction type extending into the epitaxial layer of the first conduction type is embedded insulated from the semiconductor substrate. Three doped zones of which one, of the second conduction type, is provided for the base terminal and one of the first conduction type for the emitter and collector terminal, and a zone connecting the collector terminal zone and the second buried layer, of the first conduction type, where these regions form the collector. The emitter zone and the collector terminal zone are arranged above opposite end regions of the second buried layer.

Abstract: An integrated sensor for force and motion, includes a solid insulating material body, a flexible metal strip for force transmission sealed to and extending out of the body, a piezoresistive probe in the form of a silicon wafer fastened on the metal strip in the body for mechanical loading by the metal strip, conductive connections sealed to and extending out of the body for application to an electrical instrument and for voltage supply to the probe, and at least two electrical terminals connected between the silicon wafer and the conductive connections.