Abstract: Some embodiments include a ring anode to emit radiation, and a conical monochromator to monochromatize the emitted radiation. According to some aspects, an outer diameter of the ring anode is greater than an outer diameter of a base of the monochromator.

Abstract: A method of producing well-defined polycrystalline silicon regions is described, in particular for producing electrically conducting regions, in which a substrate is provided with an insulating layer and a layer of doped amorphous silicon, electromagnetic irradiation is performed using a laser source to produce the electrically conducting regions, and a shadow mask is positioned between the laser source and the substrate having the layer for definition of the contours of the electrically conducting regions.

Abstract: Proposed is a method for manufacturing a thin-layer component, in particular a thin-layer, high-pressure sensor, as well as a thin-layer component, where a resistive layer for forming measuring elements, in particular strain gauges, is deposited on an electrically non-conductive surface of a diaphragm layer, a contact-layer system for electrically contacting the measuring elements being deposited on the measuring elements in such a manner, that regions of the measuring elements are situated between each region of the contact-layer system and the diaphragm layer. This is used to provide, in particular, a high-pressure sensor, in which the capacitances of the contacts of the contact-layer system are designed to be symmetric.

Abstract: Some embodiments include a ring anode to emit radiation, and a conical monochromator to monochromatize the emitted radiation. According to some aspects, an outer diameter of the ring anode is greater than an outer diameter of a base of the monochromator.

Abstract: A semiconductor arrangement and a method for manufacturing the semiconductor arrangement are provided, which arrangement and method allow an improvement in the current-carrying capacity for given chip dimensions. The semiconductor arrangement includes trenches introduced in the interior of the chip, which trenches reduce power loss and improve the heat dissipation of the chip, as well as reduce the forward voltage of diode.

Abstract: A method of producing well-defined polycrystalline silicon regions is described, in particular for producing electrically conducting regions, having the steps:

Abstract: Proposed is a method for manufacturing a thin-layer component, in particular a thin-layer, high-pressure sensor, as well as a thin-layer component, where a resistive layer for forming measuring elements, in particular strain gauges (30), is deposited on an electrically non-conductive surface of a diaphragm layer (10, 20), a contact-layer system (41) for electrically contacting the measuring elements being deposited on the measuring elements in such a manner, that regions of the measuring elements (30) are situated between each region of the contact-layer system and the diaphragm layer (10, 20). This is used to provide, in particular, a high-pressure sensor, in which the capacitances of the contacts of the contact-layer system are designed to be symmetric.

Abstract: A trimming resistor is manufactured by depositing a resistive layer on a substrate, with a passivation layer having windows, and a contact layer which is in contact with the resistive layer via the windows. Trimming is carried out by interrupting the contact layer at narrow spots or regions. This invention has application for the manufacture of high-pressure sensors.

Abstract: A method is proposed that functions to produce Zener diodes. The method includes a two-part film diffusion step for producing flatter and deeper doping profiles using neutral films.

Abstract: A sensor has a membrane, on which at least one resistor element is situated. The membrane has a membrane layer which is composed of a plurality of partial layers. In addition, a covering layer is provided which is composed of a plurality of partial layers. The partial layers of the membrane and the covering layer are selected so that both in the membrane and in the covering layer light tensile stresses are set, the tensile stresses preferably being roughly the same.

Abstract: An X-ray analysis apparatus having a curved paraboloid-shaped curved graded multilayer Bragg reflector (5) is characterized in that the layers of the reflector (5) are directly introduced onto a concave curved surface of a paraboloid-shaped hollow substrate and a maximum allowable shape deviation for the concave substrate surface facing the reflector is &Dgr;p={square root over (2px)} &Dgr;&thgr;R, and having a maximum allowable waviness Δ ⁢   ⁢ y Δ ⁢   ⁢ x = 1 2 ⁢ Δθ R and a maximum allowable roughness &Dgr;y=d/2&pgr;, preferentially &Dgr;y≦0.

Abstract: A sensor has a thin film element, the thin film element having a temperature-dependent electrical resistance. The thin film element includes a platinum layer, which is doped with zircon or zircon oxide. The thin film element can be arranged on a membrane to create a mass airflow sensor.

Abstract: In a semiconductor arrangement and a method for manufacturing a semiconductor arrangement, varying diffusion rates are attained by introducing crystal disorder structures into a silicon crystal. The semiconductor structure includes a semiconductor wafer which has a first layer and a second layer, which form a p-n junction. Because the diffusion rates vary, the gradient of the dopant concentration of the second layer in the edge area is greater (merely) than in the middle area. As a result, a breakdown of the p-n junction in the edge area is reached at higher voltages than in the middle area.

Abstract: A method for manufacturing a silicon wafer, in which a diffusion process takes place. During the diffusion process, a dopant foil is applied to one side, and a neutral foil to the other side. The silicon wafers are cut out by means of wire sawing out of a silicon monocrystal, since they then exhibit an optimal surface roughness for the subsequent diffusion process.

Abstract: A high-voltage breakover diode is proposed, which takes on the function of an ignition voltage distributor of an internal combustion engine having solid-state highvoltage distribution. The high-voltage breakover diode comprises a cascade of breakover diode chips, a polyimide layer having recesses in the region of the cathode connection being provided between the individual breakover diode chips produced using planar technology, in each case on the top of the breakover diode chips, and the mechanical and electrical connection of the individual breakover diode chips being effected by means of a conductive adhesive (FIG. 3).

Abstract: A rectifier arrangement for a three-phase generator having at least one power diode allocated to each half-wave of each phase and a cooling arrangement for the power diodes. The power diodes may be designed as diode chips and be arranged between two diametrically opposed heat sinks, while being oriented with respect to polarity and electrically and/or thermally conductive.

Abstract: In a method for producing a diode, a first, strongly positively doped silicon wafer is bonded in accordance with the silicon fusion method to a second, weakly negatively doped silicon wafer, and subsequently the weakly negatively doped second silicon wafer is ground down to a predetermined thickness. A chromium layer which contains a small percentage of arsenic is used for resistive contact-making on the negatively doped second silicon wafer. In this way, a diode is obtained which has a small forward voltage in conjunction with a precise breakdown voltage.

Abstract: Semiconductor arrangements, in particular diodes, have a p-layer and two n-layers that are doped to varying degrees of thickness. The p-n junction between the p-layer and the heavily doped n-layer is arranged in the chip so as to allow it to lie completely inside the chip. The p-n junction between the p-layer and the n-layer is situated in the outside areas of the chip. This arrangement does not permit any high field strengths to occur on the outside of the chip and, at the same time, it makes it possible for easily reproducible properties to be achieved. The manufacturing method can also be carried-out outside of a clean room.

Abstract: A process for manufacturing semiconductor components, especially diodes. The process entails first bonding two semiconductor wafers of different conducting types (p and n), according to a silicon-fusion bonding process (SFB), thereby forming a bonded wafer assembly with a p-n junction. The bonded wafers are then partitioned into a plurality of semiconductor elements by the cutting of grooves into the bonded wafers to a depth which extends at least to the p-n junction. Each of the plurality of semiconductor elements thus formed has an individual p-n junction with sides exposed by the grooves. The sides of the semiconductor elements are then subjected to etching and passivation. The upper and lower surfaces of the bonded wafer assembly are then metal-coated. Finally, the semiconductor elements are separated from each other by a sawing operation.

Abstract: An x-ray diffractometer is equipped with a position sensitive detector and a collimator preceding the detector. The lamellae of the collimator are radially aligned to the specimen, which is arranged in the center of a measurement circle along which the detector and collimator move during a measurement. Therefore, only the x-radiation scattered at the specimen contributes to the measured signal. An elliptically deformed multi-layer mirror is provided at the primary beam side, which deflects the source radiation in the direction of the specimen without great intensity loss and focuses it at a point lying on the measurement circle. Analysis of powdered specimens that are enclosed in glass capillaries can be undertaken. A low-background measurement of diffraction diagrams in an x-ray diffractometer given efficient use of the primary beam is achieved.