Patents by Inventor Herbert Guttler

Herbert Guttler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10816019
    Abstract: A hydraulic system (e.g., of an aircraft or other vehicle) includes a pump, a pressure line coupled to the pump and configured to distribute pressurized hydraulic fluid, and a return line configured to return hydraulic fluid to a reservoir. The hydraulic system also includes an auxiliary leakage valve coupled to the pressure line, to the return line, and to an actuator. The auxiliary leakage valve is configured to receive a control signal and, based on the control signal, selectively open a restricted fluid path. The restricted fluid path couples the pressure line to the return line to allow a restricted amount of the hydraulic fluid to flow from the pressure line to the return line.
    Type: Grant
    Filed: May 2, 2018
    Date of Patent: October 27, 2020
    Assignee: THE BOEING COMPANY
    Inventors: Matthew D. Uhlman, Barry D. Hance, Herbert Guttler, Robert J. Hawk, Paul Smith, Patrick Fahey, Ellen A. Pifer, Christopher P. Beamis, Ali Abdelmagid, Patrick McCormick, Mark W. Lesyna
  • Publication number: 20190338793
    Abstract: A hydraulic system (e.g., of an aircraft or other vehicle) includes a pump, a pressure line coupled to the pump and configured to distribute pressurized hydraulic fluid, and a return line configured to return hydraulic fluid to a reservoir. The hydraulic system also includes an auxiliary leakage valve coupled to the pressure line, to the return line, and to an actuator. The auxiliary leakage valve is configured to receive a control signal and, based on the control signal, selectively open a restricted fluid path. The restricted fluid path couples the pressure line to the return line to allow a restricted amount of the hydraulic fluid to flow from the pressure line to the return line.
    Type: Application
    Filed: May 2, 2018
    Publication date: November 7, 2019
    Inventors: Matthew D. Uhlman, Barry D. Hance, Herbert Guttler, Robert J. Hawk, Paul Smith, Patrick Fahey, Ellen A. Pifer, Christopher P. Beamis, Ali Abdelmagid, Patrick McCormick, Mark W. Lesyna
  • Patent number: 7056763
    Abstract: The invention relates to a composite structure for electronic microsystems and a method for producing this composite structure, with the composite structure being provided with a polycrystalline diamond layer (4) for heat withdrawal. The growth substrate (1) contains or forms a component layer (2) with the electronic microsystems, which are provided with binary or higher order component compound semiconductors. A protective layer (3), which encloses the component layer at least indirectly almost entirely, is placed between the component layer 2 and the diamond layer (4). A material is selected for the protective layer whose reactivity with the precursor materials present in the deposition of the diamond layer (4) by means of CVD, preferably by means of plasma CVD, is smaller than that of the component layer (2), and said protective layer.
    Type: Grant
    Filed: August 31, 2002
    Date of Patent: June 6, 2006
    Assignee: Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
    Inventors: Herbert Güttler, Peter Koidl, Matthias Seelmann-Eggebert
  • Publication number: 20030157746
    Abstract: The invention relates to a composite structure for electronic Microsystems and a method for producing this composite structure, with the composite structure being provided with a polycrystalline diamond layer (4) for heat withdrawal. The growth substrate (1) contains or forms a component layer (2) with the electronic Microsystems, which are provided with binary or higher order component compound semiconductors. A protective layer (3), which encloses the component layer at least indirectly almost entirely, is placed between the component layer 2 and the diamond layer (4). A material is selected for the protective layer whose reactivity with the precursor materials present in the deposition of the diamond layer (4) by means of CVD, preferably by means of plasma CVD, is smaller than that of the component layer (2), and said protective layer.
    Type: Application
    Filed: April 15, 2003
    Publication date: August 21, 2003
    Inventors: Herbert Guttler, Peter Koidl, Matthias Seelmann-Eggebert