Abstract: A surgical implant comprises a core region and a porous surface region extending over at least part of the core region. The surface region has a predetermined pore volume fraction. A method of manufacturing a surgical implant comprises: (i) loading metallic powder having a predetermined particle size distribution around a pre-formed core in a sealable capsule; (ii) reducing pressure within the capsule to a predetermined pressure below atmospheric pressure; (iii) pressurising the capsule with a process gas to a predetermined pressure higher than the predetermined pressure of step (ii); (iv) sealing the capsule; (v) heating the pressurised sealed capsule at an elevated temperature and an elevated pressure for a predetermined time to produce an implant precursor; (vi) cooling the sealed capsule, and; (vii) heating the implant precursor for a predetermined time at an elevated temperature and a predetermined pressure below atmospheric pressure, whereby to generate porosity in the implant precursor.

Abstract: Multiple applications request data from multiple storage units over a computer network. The data is divided into segments and each segment is distributed randomly on one of several storage units, independent of the storage units on which other segments of the media data are stored. At least one additional copy of each segment also is distributed randomly over the storage units, such that each segment is stored on at least two storage units. This random distribution of multiple copies of segments of data improves both scalability and reliability. When an application requests a selected segment of data, the request is processed by the storage unit with the shortest queue of requests. Random fluctuations in the load applied by multiple applications on multiple storage units are balanced nearly equally over all of the storage units.

Abstract: A surgical implant comprises a core region and a porous surface region extending over at least a part of said core region. The porous surface region has a predetermined pore volume fraction.

Abstract: A polishing process in which haze-free semiconductor wafers can be obtained in a single-stage process in which an initial phase of the polishing operation is carried out in the usual manner in the alkaline region. This initial stage is followed by a final phase in which polishing is carried out, at a pH of 3 to 7, in the presence of additives in the polishing agent which reduce the amount of material removed by polishing. Consequently, it may be possible to dispense with polishing agent components which act mechanically. Both phases can be carried out on one and the same equipment without interrupting the polishing operation.

Abstract: A process for polishing silicon wafers includes the step of carrying out last polishing step in the polishing operation in such a way that a protective film of silicon dioxide is produced on the surface of the polished wafer. The film does not interfere with e.g., the subsequent oxidation processes. The protective film protects the wafer surface from the many effects arising in subsequent processes which may unfavorably influence the quality of the surface.

Abstract: A process for the chemical vapor deposition of oxidic particles by oxidat of halides or halide mixtures wherein dinitrogen monoxide is used as the oxidizing agent. The reaction is carried out at comparatively low temperatures of between 900.degree. and 1150.degree. C., but results in high yields.

Abstract: A process for producing gallium arsenide or phosphide at temperatures below he sublimation point of arsenic and red phosphorus, respectively, which consists of grinding and tempering a mixture of the constituent elements of the compound to be obtained in substantially stoichiometric amounts.

Abstract: Process for polishing semiconductor surfaces, especially gallium phosphide urfaces, with an aqueous suspension of aluminum and/or gallium hydroxide precipitated from the elements by an alkaline compound at the pH value between 7.5 and 8, the suspension further containing an alkali hypochlorite in such an amount that in addition to 0.05-0.6 mol hydroxide per liter, the molar content of hypochlorite will be three to ten times that of the hydroxide; the surfaces are subjected to a buffing action with said suspension. The invention also relates to the polishing agent used in the process.