Abstract: Aspects of the disclosure provide a semiconductor device and method of manufacturing. Embodiments of the disclosure enable placing of protective structures without modifying spacing rules. The device includes a first device region defined above a substrate, the first device region being isolated from the substrate by a buried insulating layer. The first device region includes a first power rail, a first signal line traversing at least a first portion of the first device region, and a first plurality of edge cells positioned in the substrate adjacent the first device region. A first edge cell includes a substrate contact connecting the first power rail to the substrate and a first signal line antenna diode connecting the first signal line to the substrate.

Abstract: A semiconductor device is disclosed including, among other things, a first device region defined above a substrate, wherein the first device region is isolated from the substrate by a buried insulating layer, the first device region including a first power rail, a first signal line traversing at least a first portion of the first device region, and a first plurality of edge cells positioned in the substrate adjacent the first device region, wherein at least a first edge cell of the first plurality of edge cells includes a substrate contact connecting the first power rail to the substrate and a first signal line antenna diode connecting the first signal line to the substrate.

Abstract: Structures for a circuit including field-effect transistors and methods for fabricating and operating such circuits. A plurality of logic cells with a first well and a second well. The first well is directly connected with ground. A tap cell includes an inverter having an output connected with the second well. The inverter is configured to provide a bias voltage having a first state in which a positive voltage is supplied to the second well and a second state in which the second well is connected with ground.

Abstract: The present disclosure provides a placing and routing method for implementing back bias in fully depleted silicon-on-insulator. In accordance with some illustrative embodiments herein, the placing and routing method comprises placing a first plurality of a standard tap well cell along a first direction, the standard tap well cell being formed by: routing a p-BIAS wire VPW and an n-BIAS wire VNW in a first a first metallization layer, and routing a power rail and a ground rail in a second metallization layer, the VPW and the VNW extending across each of the power and ground rail, wherein the VPWs of the first plurality of standard tap well cells are continuously connected and the VNWs of the first plurality of standard tap well cells are continuously connected.

Abstract: The present disclosure provides a placing and routing method for implementing back bias in fully depleted silicon-on-insulator. In accordance with some illustrative embodiments herein, the placing and routing method comprises placing a first plurality of a standard tap well cell along a first direction, the standard tap well cell being formed by: routing a p-BIAS wire VPW and an n-BIAS wire VNW in a first a first metallization layer, and routing a power rail and a ground rail in a second metallization layer, the VPW and the VNW extending across each of the power and ground rail, wherein the VPWs of the first plurality of standard tap well cells are continuously connected and the VNWs of the first plurality of standard tap well cells are continuously connected.

Abstract: A memory cell includes an inverter loop. The inverter loop includes a plurality of inverter pairs, wherein an output of each inverter pair is connected to an input of a next inverter pair in the loop. Each inverter pair includes a first inverter and a second inverter. An input of the first inverter provides the input of the inverter pair. An output of the second inverter provides the output of the inverter pair. An output of the first inverter is connected to an input of the second inverter. The memory cell further includes a plurality of passgate transistor pairs. Each passgate transistor pair includes a first passgate transistor connected to the input of the first inverter of the inverter pair associated with the passgate transistor pair and a second passgate transistor connected to the input of the second inverter of the inverter pair associated with the passgate transistor pair.

Abstract: A storage medium for use in a computer to develop a circuit design. The storage medium recording a software tool that may be readable and executable by the computer. The software tool generally includes the steps of (A) receiving a first user input that identifies a specific cell of a plurality of existing cells in the circuit design, the specific cell having a timing characteristic, (B) generating a replacement display corresponding to the specific cell, the replacement display comprising a plurality of alternate cells suitable to replace the specific cell, each of the alternate cells having a different value associated with the timing characteristic of the specific cell, (C) receiving a second user input that identifies a replacement cell of the alternate cells and (D) automatically generating a first engineering change order to replace the specific cell with the replacement cell.

Abstract: A storage medium for use in a computer to develop a circuit design. The storage medium recording a software tool that may be readable and executable by the computer. The software tool generally includes the steps of (A) receiving a first user input that identifies a specific cell of a plurality of existing cells in the circuit design, the specific cell having a timing characteristic, (B) generating a replacement display corresponding to the specific cell, the replacement display comprising a plurality of alternate cells suitable to replace the specific cell, each of the alternate cells having a different value associated with the timing characteristic of the specific cell, (C) receiving a second user input that identifies a replacement cell of the alternate cells and (D) automatically generating a first engineering change order to replace the specific cell with the replacement cell.

Abstract: A storage medium for use in a computer to develop a circuit design. The storage medium recording a software tool that may be readable and executable by the computer. The software tool generally includes the steps of (A) receiving a first user input that identifies a specific cell of a plurality of existing cells in the circuit design, the specific cell having a timing characteristic, (B) generating a replacement display corresponding to the specific cell, the replacement display comprising a plurality of alternate cells suitable to replace the specific cell, each of the alternate cells having a different value associated with the timing characteristic of the specific cell, (C) receiving a second user input that identifies a replacement cell of the alternate cells and (D) automatically generating a first engineering change order to replace the specific cell with the replacement cell.

Abstract: A method for establishing standard cell power connections is disclosed. The method generally includes the steps of (A) calculating a power consumption of a plurality of logic cells receiving power directly from a power rail, (B) removing at least one excess via from a plurality of vias directly connecting the power rail to a power mesh in response to the power consumption and (C) routing a signal through an area where the at least one excess via was removed.

Abstract: An apparatus comprising a plurality of input cells, two or more local tie up cells, and two or more local tie down cells. The plurality of input cells may be configured to provide (i) one or more gate voltage signals and (ii) one or more supply voltage signals. The two or more local tie up cells may be configured to provide electrostatic discharge (ESD) protection to one or more first standard cells. Each of the local tie up cells may be coupled to (i) the one or more first standard cells and (ii) each of the gate voltage signals. The two or more local tie down cells may be configured to provide ESD protection to one or more second standard cells. Each of the local tie down cells may be coupled to (i) the one or more second standard cells and (ii) each of the supply voltage signals.

Abstract: A method and apparatus for managing a plurality of change orders for a circuit design is disclosed. The method generally includes the steps of (A) receiving the change orders generated manually by a user, (B) analyzing the circuit design with all of the change orders implemented and (C) generating a report suitable for the user to understand based on a result of the analyzing.

Abstract: A method for developing a circuit design is disclosed. The method generally include the steps of (A) generating a violation display based on violation information provided from a place-and-route tool and (B) generating a layout display based on layout information provided from the place-and-route tool. The violation display may include (i) a plurality of performance violations for the circuit design and (ii) a plurality of user inputs each associated with one of the performance violations. The layout display may include a layout view of the circuit design. The layout view may highlight at least one of (i) a plurality of cells and (ii) a plurality of networks each along a path related to a particular one of the performance violations identified by a user through the user inputs.