Abstract: Systems and methods disclosed herein relate to utility based selection of inquiries in a streaming data pipeline. An indication of user identification data and a data source may be received by a server in communication with a distributed streaming data pipeline. This pipeline may be in communication with asynchronous event processing services. Those event processing services may determine an inquiry rule that includes an inquiry threshold. This rule may be based on the data source and retrieval of information related to that data source from memory in a database server. The rule may prompt a comparison of an inquiry count to an inquiry threshold. If the count is below the threshold, an inquiry may be sent to a user based in part upon expected utility that is itself based upon several indications of expected utility calculated by an event processing service.

Abstract: Systems and methods disclosed herein relate to utility based selection of inquiries in a streaming data pipeline. An indication of user identification data and a data source may be received by a server in communication with a distributed streaming data pipeline. This pipeline may be in communication with asynchronous event processing services. Those event processing services may determine an inquiry rule that includes an inquiry threshold. This rule may be based on the data source and retrieval of information related to that data source from memory in a database server. The rule may prompt a comparison of an inquiry count to an inquiry threshold. If the count is below the threshold, an inquiry may be sent to a user based in part upon expected utility that is itself based upon several indications of expected utility calculated by an event processing service.

Abstract: Apparatuses and methods for a temperature insensitive electro-absorption modulator and laser. The device comprising a laser capable of emitting light. The laser itself includes a laser gain section, a first mirror and a second mirror. Each of the mirrors are coupled to the laser gain section. The laser gain section contains quantum wells. The first mirror and the second mirror have a wavelength bandwidth sufficient for a lasing wavelength range of the laser. A modulator is coupled to the laser to receive the light and is capable of modulating the light to vary the output from the modulator. The modulator contains quantum wells and has a quantum well confinement factor that is greater than 0.1. An output coupler is coupled to the modulator and the output coupler has a back reflection that is less than half of a back reflection of the second mirror. The laser has a lasing wavelength that tracks the absorption spectrum of the modulator.

Abstract: A VCSEL can include: an electro-optic modulator between a lasing active region and a light emitting surface. The electro-optic modulator can include: an electro-optically active region; a modulator mirror region over the electro-optically active region; and at least one electrical insulator region separating the modulator mirror region into at least two separate modulator mirror cavities electrically isolated from each other, wherein each separate modulator mirror cavity and a longitudinally aligned portion of the electro-optically active region form an electro-optic modulator cavity. A method of emitting light from a VCSEL can include: emitting a laser beam from the lasing active region along a longitudinal axis; and changing a refractive index of one electro-optic modulator cavity so as to steer the laser beam from the longitudinal axis.

Abstract: Apparatuses and methods for a temperature insensitive electro-absorption modulator and laser. The device comprising a laser capable of emitting light. The laser itself includes a laser gain section, a first mirror and a second mirror. Each of the mirrors are coupled to the laser gain section. The laser gain section contains quantum wells. The first mirror and the second mirror have a wavelength bandwidth sufficient for a lasing wavelength range of the laser. A modulator is coupled to the laser to receive the light and is capable of modulating the light to vary the output from the modulator. The modulator contains quantum wells and has a quantum well confinement factor that is greater than 0.1. An output coupler is coupled to the modulator and the output coupler has a back reflection that is less than half of a back reflection of the second mirror. The laser has a lasing wavelength that tracks the absorption spectrum of the modulator.

Abstract: A neutron detector includes an anode and a cathode. The cathode circumscribes the anode and has a plurality of planar segments facing the anode. In one embodiment, the neutron detector is part of an array of neutron detectors.

Abstract: A VCSEL can include: an electro-optic modulator between a lasing active region and a light emitting surface. The electro-optic modulator can include: an electro-optically active region; a modulator mirror region over the electro-optically active region; and at least one electrical insulator region separating the modulator mirror region into at least two separate modulator mirror cavities electrically isolated from each other, wherein each separate modulator mirror cavity and a longitudinally aligned portion of the electro-optically active region form an electro-optic modulator cavity. A method of emitting light from a VCSEL can include: emitting a laser beam from the lasing active region along a longitudinal axis; and changing a refractive index of one electro-optic modulator cavity so as to steer the laser beam from the longitudinal axis.

Abstract: A field effect transistor (FET) having fingers with rippled edges is disclosed. The FET includes a semiconductor substrate having a front side with a finger axis. A drain finger is disposed on the front side of the semiconductor substrate such that a greatest dimension of the drain finger lies parallel to the finger axis. A gate finger is disposed on the front side of the semiconductor substrate. The gate finger is spaced from the drain finger such that a greatest dimension of the gate finger lies parallel to the finger axis. A source finger is disposed on the front side of the semiconductor substrate. The source finger is spaced from the gate finger such that a greatest dimension of the source finger lies parallel to the finger axis. The drain finger, the gate finger, and the source finger each have rippled edges with an axis parallel with the finger axis.

Abstract: A field effect transistor (FET) having fingers with rippled edges is disclosed. The FET includes a semiconductor substrate having a front side with a finger axis. A drain finger is disposed on the front side of the semiconductor substrate such that a greatest dimension of the drain finger lies parallel to the finger axis. A gate finger is disposed on the front side of the semiconductor substrate. The gate finger is spaced from the drain finger such that a greatest dimension of the gate finger lies parallel to the finger axis. A source finger is disposed on the front side of the semiconductor substrate. The source finger is spaced from the gate finger such that a greatest dimension of the source finger lies parallel to the finger axis. The drain finger, the gate finger, and the source finger each have rippled edges with an axis parallel with the finger axis.

Abstract: Methods for improving the temperature performance of AlInGaP based light emitters. Nitrogen is added to the quantum wells in small quantities. Nitrogen is added in a range of about 0.5 percent to 2 percent. The addition of nitrogen increases the conduction band offset and increases the separation of the indirect conduction band. To keep the emission wavelength in a particular range, the concentration of In in the quantum wells may be decreased or the concentration of Al in the quantum wells may be increased. The net result is an increase in the conduction band offset and an increase in the separation of the indirect conduction band.

Abstract: A 10B neutron detector and an associated method of detecting neutrons. The detector includes an exterior shell bounding and sealing an interior volume, a neutron-sensitive boron coating located on at least part of the exterior shell at the interior volume. One of the boron coating and the exterior shell serves as a cathode, and a central structure located within the interior volume and serves as an anode. The detector includes gas within the interior volume that conducts an electrical energy pulse between the cathode and the anode in response to a neutron impinging upon the neutron-sensitive boron coating. The gas includes a quantity of 3He gas sensitive to neutron impingement and generating an electrical energy pulse for reception by the anode in response to a neutron impinging upon the 3He gas. The method includes detecting at least one neutron via impingement of the neutron upon the 3He gas.

Abstract: Methods for improving the temperature performance of alInGaP based light emitters. Nitrogen is added to the quantum wells in small quantities. Nitrogen is added in a range of about 0.5 percent to 2 percent. The addition of nitrogen increases the conduction band offset and increases the separation of the indirect conduction band. To keep the emission wavelength in a particular range, the concentration of In in the quantum wells may be decreased or the concentration of Al in the quantum wells may be increased. Because the depth of the quantum wells in the valence band is more than is required although the addition of nitrogen reduces the depth of the quantum wells in the valence band. The net result is an increase in the conduction band offset and an increase in the separation of the indirect conduction band.

Abstract: Systems and methods for improving the temperature performance of AlInGaP based light emitters. Nitrogen is added to the quantum wells in small quantities. Nitrogen is added in a range of about 0.5 percent to 2 percent. The addition of nitrogen increases the conduction band offset and increases the separation of the indirect conduction band. To keep the emission wavelength in a particular range, the concentration of In in the quantum wells may be decreased or the concentration of Al in the quantum wells may be increased. Because the depth of the quantum wells in the valence band is more than is required although the addition of nitrogen reduces the depth of the quantum wells in the valence band. The net result is an increase in the conduction band offset and an increase in the separation of the indirect conduction band.

Abstract: The present disclosure relates to a solution enabling to lead out from the front of the photovoltaic module poles (+, ?) of the electric wiring of the module's circuit by the use of glass applied in photovoltaics, with holes going through (1, 12) through the front (4) and the rear (3), as well as proper connectors (plugs) (8, 13) which enable to mount the wiring (15). Owing to that, it is possible to introduce a facilitated way of connecting modules by using short wires without connectors, which diminishes the losses of power caused by the earlier solution.

Abstract: A neutron detector includes an anode and a cathode. The cathode circumscribes the anode and has a plurality of planar segments facing the anode. In one embodiment, the neutron detector is part of an array of neutron detectors.

Abstract: The gamma-radiation module includes a housing having a box-like container and a cover for hermetically sealing a pair of cylinders within the housing. Each cylinder includes scintillation material and a photomultiplier tube on a common cylindrical axis. The hermetically sealed module may be used singly or in multiple modules in portal applications whereby gamma-radiation from a source may be detected through a gamma-radiation transparent cover on the module.

Abstract: An oxidizable metal silicide or metal aluminide is used as one of the outer layers of an optical coating to provide a corrosion and scratch resistant barrier. This layer is initially deposited in an unoxidized or partially oxidized state. In this chemical state it provides corrosion protection to the layers underneath. The metal compound or intermetallic layer has hardness properties greater than most metals and therefore provides significant scratch protection.

Abstract: A laser structure (10, 60) and method of manufacturing a vertical-cavity surface-emitting laser (VCSEL). The laser structure (10, 60) is adapted to lase at a wavelength lambda and includes a first mirror stack (14), an active region (18) disposed on the first mirror stack (14) and a second mirror stack (22) disposed on the active region (18). The second mirror stack (22) includes a plurality of alternating mirror layer pairs (a, b) with a phase shifting region (24) disposed therein. The phase shifting region (24) is positioned outside the optical aperture (25) and away from the active region (18) by at least one mirror layer pair, with the optical thickness of the phase shifting region (24) being a multiple of one-fourth lambda, the phase shifting region (24) being oxidized reducing the reflectance of the second mirror stack (22) outside the aperture relative to inside the aperture.

Abstract: A laser structure (10, 60) and method of manufacturing a vertical-cavity surface-emitting laser (VCSEL). The laser structure (10, 60) is adapted to lase at a wavelength lambda and includes a first mirror stack (14), an active region (18) disposed on the first mirror stack (14) and a second mirror stack (22) disposed on the active region (18). The second mirror stack (22) includes a plurality of alternating mirror layer pairs (a, b) with a phase shifting region (24) disposed therein. The phase shifting region (24) is positioned outside the optical aperture (25) and away from the active region (18) by at least one mirror layer pair, with the optical thickness of the phase shifting region (24) being a multiple of one-fourth lambda, the phase shifting region (24) being oxidized reducing the reflectance of the second mirror stack (22) outside the aperture relative to inside the aperture.