Abstract: The invention relates to a power semiconductor comprising a substrate (2) whose surfaces are provided with at least one electrically conducting layer (4, 6), at least one semiconductor chip (8) that is connected to an electrically conducting layer (6) of the substrate (2) in an electrically and thermally conducting manner by means of a soldered joint, a film (12) which is made of an electrically isolating material and is in close contact with the surfaces of electrically conducting layer (6) and the semiconductor chip (8), and a planar contact that is applied to the film (12). According to the invention, a soft solder whose melting temperature is lower than a maximum operating temperature of the semiconductor chip (8) is used for the soldered joint such that a semiconductor is obtained that is provided with a semiconductor (8) contact which is resistant to temperature variations, making said power semiconductor substantially more robust in case of load alternations.