Abstract: The invention relates to a device, such as an electro-luminescent display device, comprising a substrate, first electrodes which are arranged over the substrate, second electrodes which are arranged over the first electrodes and at least one electrically insulating structure which separates two of the second electrodes and is arranged over at least one of the first electrodes. The insulating structure comprises an opening which extends from the top surface of the structure to the first electrode beneath the structure. The invention further relates to a method of manufacturing such a device. In one preferred embodiment, this method involves the use of sacrificial structures with which openings are obtained the upper parts of which extend along the entire length of the respective insulating structures.

Abstract: An electroluminescent device (51) comprises a partitioning relief pattern having overhanging sections (13) for partitioning an electrode layer of the electroluminescent device (51) into a plurality of independently addressable electrode segments (11a, 11b, 11d). The overhanging section (13) is bent at predetermined positions (13b, 13c, 13d, 13e). The bends thus formed are rounded and/or beveled in order to reduce the risk that electrode segments (11a, 11b, 11d) are inadvertently connected via a second electrode layer segment present on top of the overhanging section (13).

Abstract: ICs (20) are nearly separated from the semiconductor substrate (10) on/in which they are formed. Subsequently, the substrate is positioned upside down on a substrate (carrier) (3) which is provided with glue (21) at the location of a crystal. After attachment of the crystal to the carrier, the semiconductor substrate is removed and the crystal remains attached to the carrier e.g. at the crossing of rows and columns. The separate crystals may contain TFTs (simple AM addressing) but also more complicated electronics (address of pixel in memory+identification).

Abstract: ICs (20) are nearly separated from the semiconductor substrate (10) on/in which they are formed. Subsequently, the substrate is positioned upside down on a substrate (carrier) (3) which is provided with glue (21) at the location of a crystal. After attachment of the crystal to the carrier, the semiconductor substrate is removed and the crystal remains attached to the carrier e.g. at the crossing of rows and columns. The separate crystals may contain TFTs (simple AM addressing) but also more complicated electronics (address of pixel in memory+identification).

Abstract: The invention relates to a transponder provided with an integrated circuit, an antenna, and a first capacitor provided with a dielectric and a first and a second capacitor electrode, which transponder comprises a stack of layers, i.e.: a first layer of a dielectric material, a first patterned electrically conductive layer of which the antenna forms part, a second layer of a dielectric material, and a second patterned electrically conductive layer. The invention further relates to an appliance provided with a transponder which comprises an integrated circuit, an antenna, and a first capacitor.

Abstract: An electroluminescent device (51) comprises a partitioning relief pattern having overhanging sections (13) for partitioning an electrode layer of the electroluminescent device (51) into a plurality of independently addressable electrode segments (11a, 11b, 11d). The overhanging section (13) is bent at predetermined positions (13b, 13c, 13d, 13e). The bends thus formed are rounded and/or beveled in order to reduce the risk that electrode segments (11a, 11b, 11d) are inadvertently connected via a second electrode layer segment present on top of the overhanging section (13).

Abstract: The invention relates to a transponder provided with an integrated circuit, an antenna, and a first capacitor provided with a dielectric and a first and a second capacitor electrode, which transponder comprises a stack of layers, i.e.

Abstract: An electroluminescent device (21) comprises a first (23) and a second (26) electrode layer, at least the second electrode layer (26) being provided in accordance with a desired pattern and one or more functional layers (24, 25R, 25G, 25B), the one or at least one of said functional layers being an electroluminescent layer. In order to pattern the second electrode layer (26) the EL device (21) comprises a relief pattern (27) having one or more overhanging sections (29). The EL device has means for hindering the transport of fluid along a capillary channel (33) formed by an overhanging section (29) and the surface (28a) supporting that section, an example of such means being protrusions (35) which block and/or reroute the capillary channel (33). Thus the transport of fluid by the channels (33) during manufacture of the EL device is hindered and color bleeding between pixels of the EL device and/or leakage current among electrodes of the first electrode layer is prevented.

Abstract: ICs are attached to a carrier e.g. in a bus structure or at the crossing of rows and columns. The separate crystals may contain complicated electronics (address of pixel in memory+identification).

Abstract: ICs (20) are nearly separated from the semiconductor substrate (10) on/in which they are formed. Subsequently, the substrate is positioned upside down on a substrate (carrier) (3) which is provided with glue (21) at the location of a crystal. After attachment of the crystal to the carrier, the semiconductor substrate is removed and the crystal remains attached to the carrier e.g. at the crossing of rows and columns. The separate crystals may contain TFTs (simple AM addressing) but also more complicated electronics (address of pixel in memory+identification).

Abstract: Spacing between electrode segments is minimized, e.g. by CAD design to obtain the lowest electrical resistance of said electrodes.

Abstract: A method for manufacturing an electronic device comprising an organic-containing material (3) comprises the steps of:

Abstract: A method of manufacturing mask alignment marks on an active surface of a semiconductor substrate (12) is disclosed, in which first, at least one layer (13) of a material resistant to oxidation is formed on the active surface, after which by a local etching of this layer, zones (15') for isolation by a field oxide, are defined simultaneously with the alignment marks (17'). There are formed, after the local etching of the layer (13) of anti-oxidation material while using the remaining parts of the anti-oxidation layer as a mask, depressions (26) at the substrate surface of a given depth at least at locations containing the alignment marks, which locations are designated as alignment windows (18) and the surface of the substrate is then exposed within the windows, and finally a thermal oxidation step is effected to obtain the field oxide (19'), during which the alignment marks (18) are simultaneously covered by oxide (24).