Abstract: A semiconductor structure comprises a first wafer and a second wafer, between which a glue layer can be used for combination. The first wafer comprises a first semiconductor cell structure, and a surface of the first wafer comprises conductive pads electrically connected to the first semiconductor cell structure. The second wafer comprises a second semiconductor cell structure and is bonded to the surface of the first wafer having the conductive pads. The first and second semiconductor cell structures are electrically connected through the conductive pads, and the conductive pads are formed around each die of the first wafer. The density of the first semiconductor cell structure in the first wafer is larger than the density of the second semiconductor cell structure in the second wafer.

Abstract: A method for manufacturing a multi-layer semiconductor structure is disclosed. First, a first wafer comprising a first semiconductor device structure and a second wafer comprising a substrate and a single crystal silicon layer are provided, and the first and second wafers are combined in which a surface of the first wafer having the first semiconductor device structure is in contact with a surface of the second wafer having the single crystal silicon layer. A glue layer and a dielectric layer can be employed to combine the first and second wafers. Afterwards, a process for manufacturing a second semiconductor device structure is performed on the single crystal silicon layer.