Patents by Inventor Herbert M. Cox

Herbert M. Cox has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a macroscopic stepped structure on a vicinally cut crystal
    Patent number: 4987094
    Abstract: A semiconductor structure having a face with macroscopic parallel steps and its method of making. The structure is formed by cutting a face on a crystal at a vicinal angle, that is, being misoriented from a major crystal face by a few degrees. Atomic sized microsteps are formed in the vicinal face. Parallel grooves or other regular irregularities are etched in the vicinal face. Subsequent epitaxial growth causes the microsteps to coalesce into macroscopic steps. Alternatively, etching or annealing can accomplish the same coalescing. Novel electronic structures can be fabricated on the stepped structure.
    Type: Grant
    Filed: June 2, 1989
    Date of Patent: January 22, 1991
    Assignee: Bell Communications Research, Inc.
    Inventors: Etienne G. Colas, Herbert M. Cox
  • Deposition technique
    Patent number: 4645689
    Abstract: Devices such as photodiodes based on III-V semiconductor materials have been made utilizing a CVD epitaxial procedure. This procedure includes, for example, the use of a combination of liquid and solid chloride transport sources.
    Type: Grant
    Filed: September 3, 1985
    Date of Patent: February 24, 1987
    Assignee: AT&T Bell Laboratories
    Inventor: Herbert M. Cox
  • Deposition technique
    Patent number: 4574093
    Abstract: Deposited layers are advantageously obtained by utilizing a specific vapor deposition procedure. In this procedure, a substrate is positioned a relatively short distance from the source of a gas flow capable of producing the desired deposition. This gas flow is directed so that it contacts an interior region of the substrate and moves from the initial contact point to a point on the periphery of the substrate. Exemplary of such gas flow configurations is the positioning of a substrate at a small distance above a fused quartz frit through which the deposition gas flow is directed.
    Type: Grant
    Filed: December 30, 1983
    Date of Patent: March 4, 1986
    Assignee: AT&T Bell Laboratories
    Inventor: Herbert M. Cox
  • Process for depositing chrome doped epitaxial layers of gallium arsenide utilizing a preliminary formed chemical vapor-deposited chromium oxide dopant source
    Patent number: 4204893
    Abstract: A method for reliably producing epitaxial layers of chrome doped gallium arsenide having excellent physical and electrical characteristics is disclosed. The process relies on the use of a specific dopant source for supplying chromium containing entities through the composition used in chemical vapor deposition (CVD) of gallium arsenide. The dopant source is obtained by chemical vapor deposition of a chromium oxide. This dopant is then utilized in a CVD process by flowing a reactive gas such as AsCl.sub.3 over the precipitate to form volatile chromium containing compounds which are combined with a GaAs CVD composition. The insulating gallium arsenide layers thus obtained have excellent electrical properties, resistivities greater than 10.sup.3 ohm-cm and exhibit no discernible particle induced surface irregularities.
    Type: Grant
    Filed: February 16, 1979
    Date of Patent: May 27, 1980
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Herbert M. Cox