Abstract: A semiconductor component with a pn junction comprises a semiconductor body comprising a front side and an edge region. A pn junction is formed fashion in curved fashion in the edge region of the semiconductor body. An edge structure comprising depressions is also provided in the edge region of the semiconductor body. The depressions may comprise, for example, a number of capillaries which extend into the semiconductor body proceeding from the front side of the semiconductor body.

Abstract: A semiconductor component having a first main terminal, a second main terminal, a gate terminal for controlling the current between the main terminals is provided. A first diode device can be switched between the first main terminal and the gate terminal. The first diode device has a first breakdown voltage such that the first diode device short-circuits the first main terminal with the gate terminal, thereby switching on the semiconductor component, when the voltage that drops off over the first diode device exceeds a certain predetermined value. The first diode device is connected to the control gate in an integrated manner and has an external contacting area for connecting to the first main terminal.

Abstract: A method is provided for fabricating a body region of a first conduction type for a vertical MOS transistor configuration in a semiconductor body such that the body region has a reduced resistivity without a corresponding reduction in the breakdown voltage of the transistor. The method includes, inter alia: performing a first implantation of a doping material of a first conduction type into the semiconductor body such that an implantation maximum of the first implantation lies within the semiconductor body set back from the channel region; and performing a second implantation of a doping material of the first conduction type such that an implantation maximum of the second implantation lies within the semiconductor body below the implantation maximum of the first implantation. The dose of the second implantation is less than the dose of the first implantation.

Abstract: A method is provided for fabricating a body region of a first conduction type for a vertical MOS transistor configuration in a semiconductor body such that the body region has a reduced resistivity without a corresponding reduction in the breakdown voltage of the transistor. The method includes, inter alia: performing a first implantation of a doping material of a first conduction type into the semiconductor body such that an implantation maximum of the first implantation lies within the semiconductor body set back from the channel region; and performing a second implantation of a doping material of the first conduction type such that an implantation maximum of the second implantation lies within the semiconductor body below the implantation maximum of the first implantation. The dose of the second implantation is less than the dose of the first implantation.