Patents by Inventor Herbert Paul Maruska

Herbert Paul Maruska has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making free-standing AlGaN wafer, wafer produced thereby, and associated methods and devices using the wafer
    Patent number: 7576372
    Abstract: A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlO2 substrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlO2 substrate from the single crystal AlGaN layer to make the free-standing, single crystal AlGaN wafer. Forming the single crystal AlGaN layer may comprise depositing AlGaN by vapor phase epitaxy (VPE) using aluminum and gallium halide reactant gases and a nitrogen-containing reactant gas. The growth of the AlGaN layer using VPE provides commercially acceptable rapid growth rates. In addition, the AlGaN layer can be devoid of carbon throughout. Because the AlGaN layer produced is high quality single crystal, it may have a defect density of less than about 107cm?2.
    Type: Grant
    Filed: January 26, 2007
    Date of Patent: August 18, 2009
    Assignee: Crystal Photonics, Incorporated
    Inventors: Herbert Paul Maruska, John Joseph Gallagher, Mitch M. C. Chou, David W. Hill
  • Method for making free-standing AIGaN wafer, wafer produced thereby, and associated methods and devices using the wafer
    Patent number: 7169227
    Abstract: A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlO2 substrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlO2 substrate from the single crystal AlGaN layer to make the free-standing, single crystal AlGaN wafer. Forming the single crystal AlGaN layer may comprise depositing AlGaN by vapor phase epitaxy (VPE) using aluminum and gallium halide reactant gases and a nitrogen-containing reactant gas. The growth of the AlGaN layer using VPE provides commercially acceptable rapid growth rates. In addition, the AlGaN layer can be devoid of carbon throughout. Because the AlGaN layer produced is high quality single crystal, it may have a defect density of less than about 107 cm?2.
    Type: Grant
    Filed: March 25, 2003
    Date of Patent: January 30, 2007
    Assignee: Crystal Photonics, Incorporated
    Inventors: Herbert Paul Maruska, John Joseph Gallagher, Mitch M. C. Chou, David W. Hill
  • Wafer produced thereby, and associated methods and devices using the wafer
    Patent number: 6648966
    Abstract: A method for making a free-standing, single crystal, gallium nitride (GaN) wafer includes forming a single crystal GaN layer directly on a single crystal LiAlO2 substrate using a gallium halide reactant gas, and removing the single crystal LiAlO2 substrate from the single crystal GaN layer to make the free-standing, single crystal GaN wafer. Forming the single crystal GaN layer may comprise depositing GaN by vapor phase epitaxy (VPE) using the gallium halide reactant gas and a nitrogen-containing reactant gas. Because gallium halide is used as a reactant gas rather than a metal organic reactant such as trimethygallium (TMG), the growth of the GaN layer can be performed using VPE which provides commercially acceptable rapid growth rates. In addition, the GaN layer is also devoid of carbon throughout. Because the GaN layer produced is high quality single crystal, it may have a defect density of less than about 107 cm−2.
    Type: Grant
    Filed: August 1, 2001
    Date of Patent: November 18, 2003
    Assignee: Crystal Photonics, Incorporated
    Inventors: Herbert Paul Maruska, John Joseph Gallagher, Mitch M. C. Chou
  • Method for making free-standing AlGaN wafer, wafer produced thereby, and associated methods and devices using the wafer
    Publication number: 20030183158
    Abstract: A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlO2 substrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlO2 substrate from the single crystal AlGaN layer to make the free-standing, single crystal AlGaN wafer. Forming the single crystal AlGaN layer may comprise depositing AlGaN by vapor phase epitaxy (VPE) using aluminum and gallium halide reactant gases and a nitrogen-containing reactant gas. The growth of the AlGaN layer using VPE provides commercially acceptable rapid growth rates. In addition, the AlGaN layer can be devoid of carbon throughout. Because the AlGaN layer produced is high quality single crystal, it may have a defect density of less than about 107 cm−2.
    Type: Application
    Filed: March 25, 2003
    Publication date: October 2, 2003
    Applicant: Crystal Photonics, Incorporated
    Inventors: Herbert Paul Maruska, John Joseph Gallagher, Mitch M.C. Chou, David W. Hill
  • Wafer produced thereby, and associated methods and devices using the wafer
    Publication number: 20030024472
    Abstract: A method for making a free-standing, single crystal, gallium nitride (GaN) wafer includes forming a single crystal GaN layer directly on a single crystal LiAlO2 substrate using a gallium halide reactant gas, and removing the single crystal LiAlO2 substrate from the single crystal GaN layer to make the free-standing, single crystal GaN wafer. Forming the single crystal GaN layer may comprise depositing GaN by vapor phase epitaxy (VPE) using the gallium halide reactant gas and a nitrogen-containing reactant gas. Because gallium halide is used as a reactant gas rather than a metal organic reactant such as trimethygallium (TMG), the growth of the GaN layer can be performed using VPE which provides commercially acceptable rapid growth rates. In addition, the GaN layer is also devoid of carbon throughout. Because the GaN layer produced is high quality single crystal, it may have a defect density of less than about 107 cm−2.
    Type: Application
    Filed: August 1, 2001
    Publication date: February 6, 2003
    Applicant: CRYSTAL PHOTONICS, INCORPORATED
    Inventors: Herbert Paul Maruska, John Joseph Gallagher, Mitch M.C. Chou