Abstract: A method and heating apparatus are provided for selectively depositing metal films, such as tungsten, on the metal and semi-conductor surfaces of a silicon wafer by chemical vapor deposition. The method and heating apparatus serve to isolate the depositing surface of silicon wafers from both infrared radiation and the nucleating species which are vaporized by hot surfaces within the reaction chamber by means of a barrier which reflects or absorbs infrared radiation and condenses vaporized nucleating species before a nucleate metal deposition sites on metal or semiconductor surfaces.

Abstract: A method is provided for removing organic material from an organic film in a patterned manner using ultraviolet light at sufficient power density to effect the patterned ablative photodecomposition of an organic film in the form of a blend of aliphatic and aromatic organic material or a copolymer of chemically combined aliphatic units and aromatic units.

Abstract: A metal oxide varistor with controllable breakdown voltage and capacitance characteristics is fabricated by controlled diffusion of lithium into conventional metal oxide varistor material at elevated temperature. The varistor layer containing lithium exhibits an increased breakdown voltage, lowered capacitance, and low leakage current while maintaining a high coefficient of nonlinearity.

Abstract: In semiconductor imaging apparatus a composite electrode structure which transmits a high percentage of the radiation incident thereon and which also has high electrical conductivity is provided as the first level of a two level electrode structure.

Abstract: A conductive film having low electrical resistance and having a high coefficient of transmission of radiation in the visible portion of the electromagnetic spectrum is described. The film consists of a thin layer of the intermetallic compound of gold and aluminum having the formula AuAl.sub.2.

Abstract: A method for producing varistors exhibiting improved upturn characteristics comprises controllably heating a pressed varistor powder mix to a temperature, and for a time, sufficient to form a ceramic material, and then quenching the ceramic material at a rate in excess of approximately 500.degree. C. per hour. The method is particularly advantageous when dopants such as aluminum, antimony, indium, and gallium are employed. Additionally, a surge arrester is disclosed comprising a varistor connected in series with a spark gap, the varistor being produced in accordance with the aforementioned quenching method.

Abstract: A metal oxide varistor structure having a reduced voltage overshoot is disclosed. In accordance with one embodiment of the invention, the varistor disk, for example, is provided with a relatively small region of reduced thickness, the amount of said thickness reduction being dependent upon the original thickness of the varistor substrate. The area of region of reduced thickness is selected to control conduction duration in the region of reduced thickness.