Abstract: There is described an isocyanate-based polymer foam having a V-0 rating according to Underwriters' Laboratories Standard 94 Flammability Test after aging of separate samples of the foam (i) for 168 hours at 150° C., and (ii) for 600 hours at 120° C. The foam may be in the form of a molded foam or a slabstock foam. The foam may be used in vehicular applications, such as an under hood application.

Abstract: The invention relates to a rotationally symmetrical hollow body having a main body (18), and to a method for producing the same, having a cavity (12) which extends along a longitudinal axis (14) of the main body and which is delimited by an inner wall (17) of the main body, wherein at least one filling body (24) is inserted into the cavity, the longitudinal extent of which filling body in an axial direction with respect to the longitudinal axis of the main body is smaller than the length of the main body, and wherein the filling body is fixed in a fixing position relative to the main body by at least one clamping means which acts between the filling body and the main body, and a functional region (21) is formed in the main body by the filling body.

Abstract: What is described is a battery terminal having a pole contact element which is designed to surround a pole of a rechargeable battery on a mounting plane; a first limb and a second limb which are each connected to the pole contact element, the spacing between the first and second limbs being reducible by application of force in order to fasten the pole contact element to the pole, and a tensioning arrangement which couples the two limbs to one another, said tensioning arrangement having a tensioning screw which can be actuated so as to apply force to the two limbs and which is oriented along a tensioning direction which is tilted with respect to the mounting plane.

Abstract: What is described is a battery terminal having a pole contact element which is designed to surround a pole of a rechargeable battery on a mounting plane; a first limb and a second limb which are each connected to the pole contact element, the spacing between the first and second limbs being reducible by application of force in order to fasten the pole contact element to the pole, and a tensioning arrangement which couples the two limbs to one another, said tensioning arrangement having a tensioning screw which can be actuated so as to apply force to the two limbs and which is oriented along a tensioning direction which is tilted with respect to the mounting plane.

Abstract: There is described an isocyanate-based polymer foam having a V-0 rating according to Underwriters' Laboratories Standard 94 Flammability Test after aging of separate samples of the foam (i) for 168 hours at 150° C., and (ii) for 600 hours at 120° C. The foam may be in the form of a molded foam or a slabstock foam. The foam may be used in vehicular applications, such as an under hood application.

Abstract: A dishwasher, in particular a domestic dishwasher, having a dishwashing compartment and apparatuses for washing tableware using washing liquor, wherein it is possible to set the pressure in the apparatuses for washing tableware. A feed apparatus for an additive is provided, and the pressure in the apparatuses for washing tableware can be set as a function of the metering of the additive in the feed apparatus.

Abstract: The invention relates to a vehicular seat system including a seat bottom and a seat back. The headrest is connected to the seat back. The headrest consists of a number of components. These components include: a non-foam frame element, a non-foam insert secured with respect to a portion of the frame element, and a resilient element in which at least a portion of the frame element and the entire insert are embedded. The resilient element consists essentially of a homogeneous foam material. The frame element comprises a pair of post elements for coupling to the vehicular seat back. The post elements are interconnected by a cross-piece element. The headrest is connected to the seat back such that the minimum distance between the outer surface of the headrest for contacting a head of an occupant and the insert is in the range of from about 10 mm to about 30 mm.

Abstract: Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.

Abstract: Silicon wafers having a density of BMDs with sizes between 20 to 40 nm at positions ?20 ?m below the wafer surface in the range of 5×1011/cm3, and a density of BMDs with sizes of ?300 nm?1×107/cm3, exhibit reduced slip dislocation and warpage. The wafers are sliced from a crystal grown under specific conditions and then subjected to both low temperature heat-treatment and high temperature anneal.

Abstract: Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to a center of the growing single crystal at the boundary with the melt during the pulling of the single crystal, a CUSP magnetic field applied such that a neutral surface of the CUSP magnetic field intersects a pulling axis of the single crystal at a distance of at least 50 mm from a surface of the melt. An apparatus suitable therefore contains a CUSP field positioned such that a neutral field intersects the axis of the crystal in the crucible 50 mm or more from the melt surface.

Abstract: Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.

Abstract: Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.

Abstract: A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm?3 to 7.2*1017 cm?3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.

Abstract: The invention relates to a vehicular seat system including a seat bottom and a seat back. The headrest is connected to the seat back. The headrest consists of a number of components. These components include: a non-foam frame element, a non-foam insert secured with respect to a portion of the frame element, and a resilient element in which at least a portion of the frame element and the entire insert are embedded. The resilient element consists essentially of a homogeneous foam material. The frame element comprises a pair of post elements for coupling to the vehicular seat back. The post elements are interconnected by a cross-piece element. The headrest is connected to the seat back such that the minimum distance between the outer surface of the headrest for contacting a head of an occupant and the insert is in the range of from about 10 mm to about 30 mm.

Abstract: A dishwasher, in particular a domestic dishwasher, having a dishwashing compartment and apparatuses for washing tableware using washing liquor, wherein it is possible to set the pressure in the apparatuses for washing tableware. A feed apparatus for an additive is provided, and the pressure in the apparatuses for washing tableware can be set as a function of the metering of the additive in the feed apparatus.

Abstract: For encrypting a string of data elements from a first value range, a respective data element is combined with a key element by a first computing operation. The resulting combination result may lie outside the first value range. From the combination result, an encrypted data element is then derived by a second computing operation that maps onto a second value range, for example printable 1-byte characters. Decryption is accomplished by combining the encrypted data element with the key element using an inverse computing operation to the second computing operation executed iteratively until a result of an iteration step lies within the first value range.

Abstract: The Czochralski method is used for producing p?-doped and epitaxially coated semiconductor wafers from silicon, wherein a silicon single crystal is pulled, and during the pulling is doped with boron, hydrogen and nitrogen, and the single crystal thus obtained is processed to form p?-doped semiconductor wafers which are epitaxially coated.

Abstract: An apparatus for detection of optical systems in a terrain area, has at least: a laser arrangement with a laser light source, a moving mirror for scanning the terrain area and a photoelement for detection of retroreflected laser radiation from the laser light source, a scan position sensor for detection of a scanning direction, and a controller for determination of the position of an optical system to be detected, from a measurement which is carried out by means of the laser arrangement by evaluation of the intensity of retroreflected laser radiation from an optical surface of the optical system, and evaluation of the associated scanning direction detected by the scan position sensor, with the controller having an electronic interface via which information relating at least to the intensity and the elevation of the detected retroreflected laser radiation can be transmitted to at least one display apparatus.

Abstract: Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.