Abstract: An x-ray examination apparatus comprises an x-ray source and an x-ray detector. The x-ray detector includes a photoconductor to derive electric charges from incident x-radiation and read-out elements which derive electrical pixel-signals from the electric charges from the photoconductor. A central group of the read-out elements is located in a central region of the x-ray detector and a peripheral group of the read-out elements is located in a peripheral region which surrounds the central region. The x-ray examination apparatus being provided with a selection system to select the central group of read-out elements so as to supply pixel-signals from the central group of read-elements to the output circuit. The selection system may include an encompassing electrode to drain electric charges from the peripheral group. Or the selection system shields the peripheral group from x-rays.

Abstract: The invention relates to a device for generating images and/or projections, which device includes a device for the detection of input radiation. The device for the detection of input radiation comprises a sensor with a Pr3+-activated scintillator for converting the input radiation into UV radiation. The Pr3+-activated scintillators have short excitation and decay times.

Abstract: A radiation detector comprises a plurality of detector units and x-ray absorption members placed between the respective detector units. An individual detector unit includes a sensor element and read-out circuitry. The x-ray absorption members have a wider portion and a narrower portion and the read-out circuitry is accommodated at the narrower portion of the x-ray absorption member. Hence, the read-out circuitry is shielded from incident x-rays by the wider portion.

Abstract: An x-ray detector comprises a conversion layer for converting x-radiation into optical radiation. Photosensitive elements notably photodiodes to derive electronic signals from the optical radiation received by the photosensitive elements. The conversion layer contains Caesium-iodide doped with Thallium (CsI:Tl); the Caesium-iodide doped with Thallium is ultrapure and the Tl-doping level is in the range of 0.25-1.00 at %.

Abstract: The invention relates to a grid (3) for the absorption of X-rays (11). An anti-scatter grid for reducing the scattered radiation is readily manufactured by arranging a plurality of layers containing wire elements (10) that are spaced apart and an appropriate ruggedness is achieved also for large-area X-ray detectors.

Abstract: The invention relates to a detector for the detection of electromagnetic radiation (6, 9), including scintillators (S1-S5), a photosensor device (F1-F5) and an intermediate layer (10). The optical crosstalk due to multiple reflection in the intermediate layer is prevented in that at least parts of the intermediate layer (10) contain substances absorbing electromagnetic radiation (9).

Abstract: In a method of and an arrangement for producing a fluorescent layer on a substrate (12), being supported by a substrate holder (11), the temperature of the substrate (12) and of the substrate holder (11) is controlled by introducing a gas into a cavity (14) between the substrate and the substrate holder in order to realize a thermal coupling between the substrate and the substrate holder.

Abstract: A computer tomograph detector for the detection of electromagnetic radiation transmitted by an object, which detector includes at least one detector row which consists of a plurality of detector elements, each detector element including a scintillator for converting radiation of a first energy level into radiation of a second energy level, as well as a photosensor for converting the radiation into an electrical current, each photosensor being associated with an amplifier element, is extended in such a manner that it can include a plurality of detector rows while the electronic noise is nevertheless reduced and at the same time a higher DQE is obtained; this is achieved by arranging a plurality of photosensors and the associated amplifier elements on the same substrate in integrated semiconductor technique.

Abstract: The invention relates to a grid (3) for the absorption of X-rays (11). An anti-scatter grid for reducing the scattered radiation is readily manufactured by arranging a plurality of layers containing wire elements (10) that are spaced apart and an appropriate ruggedness is achieved also for large-area X-ray detectors.

Abstract: An x-ray examination apparatus includes an x-ray source for emitting x-rays and an x-ray detector for deriving an image signal from an x-ray image. The x-ray detector has a semiconductor element including one or several sensor elements. Further the x-ray examination apparatus is provided with a bias radiation source for irradiating the x-ray detector with electromagnetic radiation. In particular, the x-ray detector is an x-ray sensor matrix having a multitude of semiconductor sensor elements. Preferably the bias radiation source is arranged to emit infrared radiation.

Abstract: In an arrangement of light-sensitive or X-ray sensitive sensors (S.sub.1,1, . . . , S.sub.2048,2048) arranged in a matrix in rows and columns, which sensors produce charge states in dependence upon the amount of incident radiation and each have an electrical switch, for each sensor row a switching line (33.sub.1, . . . , 33.sub.2048) via which the switches (3) can be activated so that the charge states of the sensors of the activated sensor row are read or reset simultaneously via associated read lines (8, 9, 10), there is provided a reset device (30a, 30b) for resetting the charge states of previously read sensor rows, which device activates at least one of the previously read sensor rows, which activates another of the previously read sensor rows after a predetermined number of clock pulses of a reset clock signal (T.sub.32), and which deactivates each activated sensor row a predetermined number of clock pulses after its activation.

Abstract: The invention relates to an X-ray image detector, comprising a plurality of X-ray-sensitive sensors and having the following features:each sensor comprises a collecting electrode and a switching element which connects the collecting electrode to an output lead;a photoconductor layer is provided between the individual collecting electrodes and a bias electrode;the collecting electrodes form, in conjuction with reference electrodes, capacitances which can be charged by charge carriers generated in the photoconductor. The invention improves the effectiveness of such an X-ray image detector in that either the surface area of the collecting electrodes is increased or the electric field is distorted by a semiconductor layer so that the majority of the charge carriers generated in the photoconductor flow to the collecting electrodes.

Abstract: An X-ray examination apparatus includes a sensor matrix (41) with sensors (1) which are arranged in rows and columns and each of which comprises an X-ray sensitive photosensor element (11) and a storage capacitance (12) which is connected parallel thereto. First electrodes of the sensors are connected to a counter-electrode (2) which receives a direct voltage, second electrodes being connected to an electric switch (13) provided for each sensor. For exposure measurement the currents flowing through the counter-electrode (electrodes) (2) and/or the electric switches (13) after the brief closing of the electric switches (13) and before the reading of the charges are used to measure and/or correct the exposure of groups of the sensors during the execution of an X-ray exposure.

Abstract: A matrix of light-sensitive or x-ray sensitive sensors (S.sub.1,1, . . . S.sub.2000,200) are arranged in rows and columns and generate charges in dependence on the amount of incident radiation. The sensors comprise a respective electric switch (3) and are constructed, like the electric switches (3), of thin-film technology. Each sensor row has a switching line (5, 6, . . . , 7) via which the switches can be activated so that the charges of the relevant activated sensor row are simultaneously output via read lines (8, 9, . . . , 10, . . . ). Transfer means convert the signals read in parallel into a serial output signal; in order to achieve an as favorable as possible noise behavior. An amplifier (11, 12, . . . , 13) is in each read line and is constructed as a silicon crystal and precedes the transfer means. During the read operations, the amplifiers simplify the signals read from the sensors (S.sub.1.1, . . . S.sub.2000,2000) connected to the relevant read line (8, 9, . . . , 10, . . . ).

Abstract: A photodiode radiation sensor sensitive to luminous or x-ray radiation, has an inherent capacitance which is charged by the radiation. The charge is read out by a switching diode. The diode is placed in its conductive state by an auxiliary voltage and is switched off after the read-out process. The quantity of charge flowing during the read-out process is measured and used to determine the quantity of incident radiation. To measure relatively small quantities of charge, a voltage is coupled in when the auxiliary voltage is switched on to place the switching diode in a more strongly conducting state so that during the read-out process a larger quantity of charge flows away.

Abstract: A sensor matrix includes light-sensitive and/or X-ray sensitive thin-film sensors (1) comprising two electrodes (2, 6) and a semiconductor layer (5) therebetween. In each sensor (1) there is a separate electrode which serves as the first electrode (2), the semiconductor layer (5) being constructed as a continuous layer which is common to all sensors (1), and which covers all first electrodes (1), the second electrodes (6) being formed, at least for groups of sensors (1), as a continuous layer (6) which covers the semiconductor layer (5) at the area of all first electrodes (2) of the sensors (1) of the relevant group and acts as a second electrode for all sensors of the relevant group.

Abstract: A device for reading the charges of several sensor elements (12, 13, 22, . . . ) which are arranged in a matrix, for each column of sensors there being provided a common read line (82, 83) while for each row of sensors there is provided a common switching line (19, 29, . . . , 79). In order to achieve a reduction of the read capacitances for each column of sensors there are also provided several segmented read lines (91, 92, . . . ) which are connectable to only a few sensor elements (12, 13, 22, . . . ) of a column, via the switches (2) thereof, and which are individually connectable, via further electric switches (4, 5), to the common read line (82, 83) of the column; for a read operation of a row of sensors, those segmented read lines (91, 92, . . . ) of each column, which are connected to the activated row of sensors, via the switches (2) thereof are connectable to the common read lines (82, 83).