Abstract: A Si--SiC ceramic layer is bonded to a non-porous SiC substrate with the Si etched from the layer to form a relatively porous surface on the otherwise non-porous high strength SiC substrate. A quartz layer is softened by heating and forced into the pores of the porous layer to form a mechanical bond to the SiC substrate. A refractory metal layer is bonded to the quartz layer to complete the joint. A refractory metal support component is then bonded to the refractory layer whereby the quartz serves as a high strength, high temperature reaction barrier between the metal of the refractory layer and the silicon of the SiC substrate.

Abstract: A method and apparatus for thermoforming 3-dimensional articles of chosen wall thickness dimensions from a polar polymer sheet. The polymer sheet is dielectrically heated, the heating being controlled to impress a predetermined thermal pattern on the sheet. The thermal pattern is selected in accordance with the amount of stretching to which each area of the sheet is subjected during the subsequent work-forming step, the areas subjected to greater stretching being heated to a lower temperature and vice versa. Thus, the stretching action is balanced and results in accurate control of the wall thickness of the final article.

Abstract: A varistor with a body including an outer perimeter and substantially parallel opposed ends is surrounded on its outer perimeter by a collar formed from a high temperature polymer. Electrodes are fixed to the parallel opposed ends of the varistor such that they extend at least to the interior edge of the collar. A method of making the varistor is also described.

Abstract: A Si--SiC ceramic layer is bonded to a non-porous SiC substrate with the Si etched from the layer to form a relatively porous surface on the otherwise non-porous high strength SiC substrate. A quartz layer is softened by heating and forced into the pores of the porous layer to form a mechanical bond to the SiC substrate. A refractory metal layer is bonded to the quartz layer to complete the joint. A refractory metal support component is then bonded to the refractory layer whereby the quartz serves as a high strength, high temperature reaction barrier between the metal of the refractory layer and the silicon of the SiC substrate.

Abstract: An upper contoured die which mates with a lower contoured die is rotated relative to and against the lower die to progressively squeeze and deform a softened thermoplastic sheet. The two dies create sharp detail on both surfaces of the deformed sheet without tearing the sheet.

Abstract: An apparatus for roll forming of thermoplastic material is provided which employs a pair of rollers having forming surfaces thereon, the pair of rollers defining a gap through which the thermoplastic material is to be passed during the forming operation, the thermoplastic material being dielectrically heated to a softening temperature as it passes between the rollers by a radio frequency electromagnetic field produced between the rollers by activating a radio frequency generator or oscillator which is electrically connected to one of the rollers, the rollers each having conductive portions between which the electromagnetic field is produced.

Abstract: Thermoplastic panels are formed and laminated together simultaneously by using a roller to provide vertical pressure to two heated thermoplastic sheets, one a composite thermoplastic sheet, the other a monolithic thermoplastic sheet. The monolithic thermoplastic sheet allows laminating protective layers to structural panels for improving scratch resistance, improving appearance or reducing chemical permeability.

Abstract: A method of roller forming thermoplastic sheet material to form large parts includes providing a form having a surface of predetermined curvature. A sheet of thermoplastic material is overlain on the form surface and heated until pliable. Pressure is provided on the thermoplastic sheet using a roller so that the sheet conforms to the shape of the form.

Abstract: Apparatus for performing a plasma enhanced chemical vapor deposition on an edge of a polycarbonate sheet includes a conduit having an axially disposed slit therethrough for engaging the sheet so as to position the edge in the conduit. Axially disposed electrodes are attached to the conduit and positioned to be on generally opposite sides of the edge. Means are provided for applying a separate electrical potential to each of the electrodes, and at least one aperture is provided in the conduit for introducing and removing a gas therefrom.

Abstract: A substrate for a semiconductor chip package comprises a metal layer characterized by a high coefficient of thermal conductivity and girded by a restraining wrapper characterized by both a low coefficient of thermal expansion and a high ultimate tensile strength.

Abstract: A substrate for a semiconductor chip package comprises a metal layer characterized by a high coefficient of thermal conductivity and girded by a restraining wrapper characterized by both a low coefficient of thermal expansion and a high ultimate tensile strength.