Abstract: An embodiment of the invention is an electron multiplier including a first plate having an electron emissive first interior surface. A second plate has an electron emissive second interior surface. A voltage source is connected across the first plate and the second plate. A collector generates a signal responsive to electron multiplication by the first plate and the second plate. The first interior surface and the second interior surface are parallel and are non-planar.

Abstract: A process of forming chlorine-doped silicon dioxide films on a silicon substrate comprising oxidizing said silicon substrate in the presence of a chlorine source, thereby forming said chlorine-doped silicon dioxide film on said silicon substrate, said chlorine source being oxalyl chloride.

Abstract: Liquid chemical supply ampules, commonly called "bubblers", which are used in semiconductor and fiber optic component production lines are automatically refilled without the need to interrupt operation of the production lines. The bubbler ampules utilize a supply of the liquid chemicals from which the ampules produce a gas stream which is saturated with the chemicals. An individual ampule will be connected by means of a selectively operable series of transfer valves to two separate chemical bulk supply tanks. The bulk supply tanks can include one fixed and one replaceable tank; or two replaceable tanks.

Abstract: A plasma CVD process for forming silicon carbide-type films onto a substrate comprising the steps of:(a) introducing a di-tert-butylsilane vapor into a CVD reaction zone containing said substrate on which a silcion carbide film is to be formed;(b) maintaining the temperature of said zone and said substrate at about 100.degree. C. to about 400.degree. C.;(c) maintaining the pressure in said zone at about 0.01 to about 10 torr; and(d) passing said gas into contact with said substrate while exciting said gas with a plasma for a period of time sufficient to form a silicon carbide-type film thereon, wherein said plasma is excited by DC or RF power of about 10 to about 500 watts.

Abstract: A thermal CVD process for forming silicon carbide-type films onto a substrate comprising the steps of:(a) introducing di-tert-butylsilane vapor into a CVD reaction zone containing said substrate on which a silicon carbide film is to be formed;(b) maintaining the temperature of said zone and said substrate at about 400.degree. C. to about 1,100.degree. C.;(c) maintaining the pressure in said zone at about 0.1 to about 10 torr; and(d) passing said vapor into contact with said substrate for a period of time sufficient to form a silicon carbide-type film thereon.

Abstract: New arsenate compounds, compositions and solid diffusion sources for the arsenic doping of semiconductors are disclosed which comprise substances composed of a sintered arsenate that decomposes upon heating at temperatures between 500.degree.-1400.degree. C. to release As.sub.2 O.sub.5, As.sub.2 O.sub.3 and/or elemental arsenic vapors for transport to semiconductor elements as a controlled dopant.