Abstract: Methods are disclosed for producing an organic functionalized solid inorganic substrate, a surface of the inorganic substrate comprising a hydroxide and/or an oxide comprising an element M, the element M being a metal or a metalloid. The method includes drying the surface; optionally removing protons from the surface; and contacting the surface with an organometallic reagent comprising at least one organic functional moiety, thereby obtaining the organic functionalized inorganic substrate, the at least one organic functional moiety being attached to the element M of the hydroxide and/or the oxide by means of a direct M-C bond. The drying step includes contacting the surface with a flow comprising an inert gas. The organic functionalized inorganic substrate obtained by the method may be used as a membrane, a catalyst, a sorbent, a sensor or an electronic component, or as a substrate in filtration, adsorption, chromatography and/or separation processes.

Abstract: The invention comprises a butyl acetate-silicone formulation comprising (A) an organopolysiloxane containing an average of at least two silicon-bonded alkenyl groups per molecule, (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule; (C) a hydrosilylation catalyst; and a coating effective amount of (D) butyl acetate. The invention also comprises related silicone formulations made by removing a portion, or all, of (D) butyl acetate therefrom, and related cured products, methods, articles and devices.

Abstract: Methods for fabrication of thermal interposers, using a low stress photopatternable silicone are provided, for use in production of electronic products that feed into packaging of LEDs, logic and memory devices and other such semiconductor products where thermal management is desired. A photopatternable silicone composition, thermally conductive material and a low melting point compliant solder form a complete semiconductor package module. The photopatternable silicone is applied on a surface of a wafer and selectively radiated to form openings which provided user defined bondline thickness control. The openings are then filled with high conductivity pastes to form high conductivity thermal links. A low melting point curable solder is then applied where the solder wets the silicone as well as the thermally conductive path that leads to low thermal contact resistance between the structured z-axis thermal interposer and the heat sink and/or substrate which can be a wafer or PCB.

Abstract: In a method of removal of silicon carbide layers, and in particular amorphous SiC on a substrate, the exposed part of a carbide-silicon layer is at least partly converted into an oxide-silicon layer or a nitride silicon layer by exposing the carbide-silicon layer to an oxygen-containing plasma or a nitrogen-containing plasma. In a separate step, the oxide-silicon or nitride-silicon layer is then removed from the substrate. An oxygen containing plasma can be a reactive ion etch plasma, a chemical vapor deposition plasma, or a plasma afterglow. In certain embodiments, the substrate can be a component of an integrated circuit, or a component of a MEMS device.

Abstract: The present invention is related to an integrated circuit having an SiC etch stop layer fabricated using a method for removal of silicon carbide layers and in particular amorphous SiC of a substrate comprising the steps of: converting at least partly said exposed part of said carbide-silicon layer into an oxide-silicon layer by exposing said carbide-silicon layer to an oxygen containing plasma; and removing said oxide-silicon layer from said substrate.

Abstract: The present invention is related to an integrated circuit having an SiC etch stop layer fabricated using a method for removal of silicon carbide layers and in particular amorphous SiC of a substrate comprising the steps of: converting at least partly said exposed part of said carbide-silicon layer into an oxide-silicon layer by exposing said carbide-silicon layer to an oxygen containing plasma; and removing said oxide-silicon layer from said substrate.

Abstract: The present invention is related to a method for removal of silicon carbide layers and in particular amorphous SiC of a substrate. Initially, the exposed part of a carbide-silicon layer is at least partly converted into an oxide-silicon layer by exposing the carbide-silicon layer to an oxygen containing plasma. The oxide-silicon layer is then removed from the substrate.

Abstract: A sealing dielectric layer is applied between a porous dielectric layer and a metal diffusion barrier layer. The sealing dielectric layer closes the pores on the surface and sidewalls of the porous dielectric layer. This invention allows the use of a thin metal diffusion barrier layer without creating pinholes in the metal diffusion barrier layer. The sealing dielectric layer is a CVD deposited film having the composition SixCy:Hz.

Abstract: A sealing dielectric layer is applied between a porous dielectric layer and a metal diffusion barrier layer. The sealing dielectric layer closes the pores on the surface and sidewalls of the porous dielectric layer. This invention allows the use of a thin metal diffusion barrier layer without creating pinholes in the metal diffusion barrier layer. The sealing dielectric layer is a CVD deposited film having the composition SixCy:Hz.