Abstract: Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.

Abstract: Embodiments of a parallel system for epitaxial deposition are disclosed herein. In some embodiments, a parallel system for epitaxial deposition includes a first body having a first process chamber and a second process chamber disposed within the first body; a shared gas injection system coupled to each of the first and the second process chambers; and a shared exhaust system coupled to each of the first and second process chambers, the exhaust system having independent control of an exhaust pressure from each chamber. In some embodiments, the gas injection system provides independent control of flow rate of a gas entering each chamber.

Abstract: A method implemented by one or more processors, including receiving first information relating a plurality of flow rates of a species to corresponding concentrations of the species within films generated using the flow rates; receiving a desired concentration profile of the species within a desired film; and generating a plurality of process steps that, when performed, would form the desired film with the desired concentration profile by controlling the flow rate of the species based, in part, on the first information and the desired concentration profile, wherein a first concentration of the species at a first point in the desired concentration profile differs from a second concentration of the species at a second point in the desired concentration profile. A computer-readable medium, system and apparatus are also disclosed.

Abstract: A method implemented by one or more processors, including receiving first information relating a plurality of flow rates of a species to corresponding concentrations of the species within films generated using the flow rates; receiving a desired concentration profile of the species within a desired film; and generating a plurality of process steps that, when performed, would form the desired film with the desired concentration profile by controlling the flow rate of the species based, in part, on the first information and the desired concentration profile, wherein a first concentration of the species at a first point in the desired concentration profile differs from a second concentration of the species at a second point in the desired concentration profile. A computer-readable medium, system and apparatus are also disclosed.

Abstract: A method and system for controlling the introduction of a species according to a determined concentration profile of a film comprising the species introduced on a substrate. In one aspect, the method comprises controlling the flow rate of a species according to a determined concentration profile of a film introduced on a substrate, and introducing a film on a substrate, the film comprising the species at a first concentration at a first point in the film and a second concentration different than the first concentration at a second point in the film. Also, a bipolar transistor including a collector layer of a first conductivity type, a base layer of a second conductivity type forming a first junction with the collector layer, and an emitter layer of the first conductivity type forming a second junction with the base layer. An electrode configured to direct carriers through the emitter layer to the base layer and into the collector layer is also included.

Abstract: A method and system for controlling the introduction of a species according to a determined concentration profile of a film comprising the species introduced on a substrate. In one aspect, the method comprises controlling the flow rate of a species according to a determined concentration profile of a film introduced on a substrate, and introducing a film on a substrate, the film comprising the species at a first concentration at a first point in the film and a second concentration different than the first concentration at a second point in the film. Also, a bipolar transistor including a collector layer of a first conductivity type, a base layer of a second conductivity type forming a first junction with the collector layer, and an emitter layer of the first conductivity type forming a second junction with the base layer. An electrode configured to direct carriers through the emitter layer to the base layer and into the collector layer is also included.