Abstract: A wafer clamp assembly for holding a wafer during a deposition process comprises an outer annular member defining a central recess that has a diameter slightly greater than the diameter of the wafer. A plurality of finger members are carried by the outer annular member and extend radially inwardly from the outer annular member into the central recess, wherein each of the finger members has a free end for contacting the wafer during the deposition process.

Abstract: A wafer clamp assembly for holding a wafer during a deposition process comprises an outer annular member defining a central recess that has a diameter slightly greater than the diameter of the wafer. A plurality of finger members are carried by the outer annular member and extend radially inwardly from the outer annular member into the central recess, wherein each of the finger members has a free end for contacting the wafer during the deposition process.

Abstract: A wafer clamp assembly for holding a wafer during a deposition process comprises an outer annular member defining a central recess that has a diameter slightly greater than the diameter of the wafer. A plurality of finger members are carried by the outer annular member and extend radially inwardly from the outer annular member into the central recess, wherein each of the finger members has a free end for contacting the wafer during the deposition process.

Abstract: A chamber (10) for applying material to the surface of a semiconductor wafer (18) located in the chamber by means of cathodic sputtering a target (26), located on a target mount (24), of the material to be applied or a component thereof, contains a wafer mount (14) on which the semiconductor wafer (18) to be coated is located. The wafer mount (14) is provided movable in the chamber (10) between a charging position for application of the semiconductor wafer and a sputtering position in which semiconductor wafer is located at a predefined distance away from and opposite to the target. Provided in the chamber is a shielding support (30) which is supported by the edge of the semiconductor wafer in the sputtering position in maintaining it in contact with the wafer mount, the shielding support extending between the edge of the semiconductor wafer and a portion adjoining the edge of the target on the target mount and thus defining a sputtering space between the target and the semiconductor wafer.

Abstract: A chamber (10) for applying material to the surface of a semiconductor wafer (18) located in the chamber by means of cathodic sputtering a target (26), located on a target mount (24), of the material to be applied or a component thereof, contains a wafer mount (14) on which the semiconductor wafer (18) to be coated is located. The wafer mount (14) is provided movable in the chamber (10) between a charging position for application of the semiconductor wafer and a sputtering position in which semiconductor wafer is located at a predefined distance away from and opposite to the target. Provided in the chamber is a shielding support (30) which is supported by the edge of the semiconductor wafer in the sputtering position in maintaining it in contact with the wafer mount, the shielding support extending between the edge of the semiconductor wafer and a portion adjoining the edge of the target on the target mount and thus defining a sputtering space between the target and the semiconductor wafer.