Patents by Inventor Hermann Hammel

Hermann Hammel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7129788
    Abstract: A d.c. signal controlled oscillator includes a frequency-determining network having a control input and a modulation input. A phase regulating loop includes the oscillator and components that provide a control signal to the control input. A circuit apparatus for driving the oscillator includes a modulation generator that provides a modulation signal to the modulation input, and a circuit arrangement that autonomously generates a signal depending on and representing a slope of the modulation and provides this slope signal to the modulation generator, which generates the modulation signal dependent on the slope signal.
    Type: Grant
    Filed: April 27, 2004
    Date of Patent: October 31, 2006
    Assignee: Atmel Germany GmbH
    Inventors: Juergen Eckert, Thorsten Fahlbusch, Burkhard Gehring, Hans-Werner Groh, Horst Haefner, Hermann Hammel, Michael Hecker, Gerald Krimmer, Reinhard Reimann, Wolfgang Roeper, Friedemann Schmidt, Juergen Schnabel, Wolfgang Schneider, Michael Vogt, Hans-Peter Waible
  • Publication number: 20040233009
    Abstract: A d.c. signal controlled oscillator includes a frequency-determining network having a control input and a modulation input. A phase regulating loop includes the oscillator and components that provide a control signal to the control input. A circuit apparatus for driving the oscillator includes a modulation generator that provides a modulation signal to the modulation input, and a circuit arrangement that autonomously generates a signal depending on and representing a slope of the modulation and provides this slope signal to the modulation generator, which generates the modulation signal dependent on the slope signal.
    Type: Application
    Filed: April 27, 2004
    Publication date: November 25, 2004
    Applicant: ATMEL Germany GmbH
    Inventors: Juergen Eckert, Thorsten Fahlbusch, Burkhard Gehring, Hans-Werner Groh, Horst Haefner, Hermann Hammel, Michael Hecker, Gerald Krimmer, Reinhard Reimann, Wolfgang Roeper, Friedemann Schmidt, Juergen Schnabel, Wolfgang Schneider, Michael Vogt, Hans-Peter Waible
  • Patent number: 5748425
    Abstract: In order to protect against any damage caused by electrostatic discharges, an integrated circuit layout is provided with at least one circuit connection which is connected via one of two diodes, respectively, to a first supply line and a second supply line. The diodes are reverse biased, i.e., one of them becomes conductive if a potential exists at the circuit connection that is either higher or lower than the supply potentials applying to the supply lines. The circuit layout is provided with an overvoltage suppression device connecting the two supply lines. The overvoltage suppression device is switched into a low impedance state by a steep rate increase or rise in a supply voltage applied between the supply lines such that a discharge current counteracting the increase in the supply voltage will flow via the overvoltage suppression device from the one supply line to the other supply line, and the discharge energy is converted into heat in the overvoltage suppression device.
    Type: Grant
    Filed: October 16, 1996
    Date of Patent: May 5, 1998
    Assignee: Temic Telefunken microelectronic GmbH
    Inventors: Henrik Gutsch, Horst Hafner, Hermann Hammel, Friedemann Schmidt, Jurgen Schnabel
  • Patent number: 5565810
    Abstract: A switch is described with a bipolar transistor as first switching element having a high breakdown voltage when operated in the reverse direction. This can be accomplished by a second switching element provided in the switch, a switching transistor, e.g. an MOS transistor, through which the base and the collector of the bipolar transistor are joined together, is activated in the reverse mode of the switch, i.e. when the bipolar transistor is in inverse mode, in such a way that the second switching element becomes conductive. The collector-emitter breakdown voltage of the bipolar transistor, i.e. its maximum permissible collector-emitter voltage, is thus brought closer to its higher base-emitter breakdown voltage.
    Type: Grant
    Filed: April 7, 1995
    Date of Patent: October 15, 1996
    Assignee: TEMIC TELEFUNKEN microelectronic GmbH
    Inventors: Hermann Hammel, Horst Hafner, Jurgen Schnabel, Henrik Gutsch