Patents by Inventor Hermann Holzer

Hermann Holzer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Heat sink for electric and/or electronic devices
    Patent number: 6191944
    Abstract: A heat sink adapted for use with an electrical and/or electronic device, in particular with a semiconductor chip such as an integrated circuits, or with a casing for such a device, is formed from a material including whiskers.
    Type: Grant
    Filed: November 5, 1998
    Date of Patent: February 20, 2001
    Assignee: Electrovac, Fabrikation elektrotechnischer Spezialartikel Gesellschaft m.b.H.
    Inventors: Ernst Hammel, Hermann Holzer
  • Minimal thermal expansion, high thermal conductivity metal-ceramic matrix composite
    Patent number: 6132676
    Abstract: The invention provides techniques for forming composites including XW.sub.2 O.sub.8, where X=Zr, Hf, or a combination, dispersed within a continuous, metal matrix. A low to zero coefficient of thermal expansion material, with high thermal and electrical conductivity, results. One method for forming the composite involves coating particles of XW.sub.2 O.sub.8 with a layer of metal, then isostatically pressing the particles under conditions amenable to formation of a composite. The technique of coating, with a more malleable phase, a phase that undergoes a disadvantageous phase transformation of decomposition upon exposure to a threshold pressure at a set temperature can be applied to a variety of materials.
    Type: Grant
    Filed: June 30, 1997
    Date of Patent: October 17, 2000
    Assignees: Massachusetts Institute of Technology, Electrovac GESMBH
    Inventors: Hermann Holzer, David C. Dunand
  • Method of depositing a polycrystalline diamond layer on a nitride substrate
    Patent number: 5925413
    Abstract: A method of depositing a polycrystalline diamond layer on a nitride substrate is disclosed, which comprises chemically-etching the nitride substrate with a KOH or NaOH solution or melt and depositing the polycrystalline diamond layer on the nitride substrate from a vapor phase, wherein the etching temperature, time and concentration of the etchant are controlled so that at least 75% of the interface between the substrate and the diamond layer is covered by diamond crystals, each diamond crystal having a contact area with the substrate of .gtoreq.20 um.sup.2.
    Type: Grant
    Filed: March 25, 1997
    Date of Patent: July 20, 1999
    Assignee: Electrovac, Fabrikation elektrotechnischer Spezialartikel Gesellschaft m.b.H.
    Inventors: Hermann Holzer, Roland Haubner, Benno Lux, Helmut Nechansky