Abstract: An unreleased thermopile IR sensor and method of fabrication is provided which includes a new thermally isolating material and an ultra-thin material based sensor which, in combination, provide excellent sensitivity without requiring a released membrane structure. The sensor is fabricated using a wafer transfer technique in which a substrate assembly comprising the substrate and new thermally isolating material is bonded to a carrier substrate assembly comprising a carrier substrate and the ultra-thin material, followed by removal of the carrier substrate. As such, temperature restrictions of the various materials are overcome.

Abstract: An unreleased thermopile IR sensor and method of fabrication is provided which includes a new thermally isolating material and an ultra-thin material based sensor which, in combination, provide excellent sensitivity without requiring a released membrane structure. The sensor is fabricated using a wafer transfer technique in which a substrate assembly comprising the substrate and new thermally isolating material is bonded to a carrier substrate assembly comprising a carrier substrate and the ultra-thin material, followed by removal of the carrier substrate. As such, temperature restrictions of the various materials are overcome.

Abstract: A method for manufacturing an imaging device is presented. The method starts with providing a wafer having a membrane with an opening bonded to a substrate. A photoresist layer is deposited over the membrane and wafer surface. A portion of the substrate back surface under a central part of the membrane is etched anisotropicly. A first region of the photoresist layer is removed, exposing an opening in the membrane, so that a first isotropic etching of the substrate is performed through the membrane opening. A second region of the photoresist layer is stripped, exposing a second membrane opening, providing access for a second isotropic etching of the substrate through the first and/or second membrane opening.

Abstract: A method for manufacturing an imaging device in a semiconductor substrate is disclosed. The substrate includes a first surface, a second surface substantially opposite the first surface, and a thickness defined by a distance between the first surface and the second surface. A trench is fabricated in the semiconductor substrate first surface. A passivation layer is applied over the substrate first surface and the trench, optionally filling the trench by depositing a conformal layer over the substrate first surface. The conformal layer and the passivation layer are planarized from the substrate first surface, and a membrane is fabricated on the substrate first surface. From the substrate second surface, a cavity is formed in the substrate abutting the membrane and at least a portion of the trench via the unmasked region.

Abstract: A method for manufacturing a surface machined infrared sensor package is disclosed. A semiconductor wafer is provided having a front side surface and a back side surface. A transistor is defined on the substrate front side. A thin film reflector is implanted in the substrate front side, and a sensor is formed on the semiconductor substrate front side adjacent to the reflector. A thin-film absorber is deposited upon the sensor, wherein the thin-film absorber is substantially parallel to the reflector.

Abstract: A method of manufacturing a pixel structure having an umbrella absorber is disclosed. The method includes providing a substrate with a membrane on a first surface of the substrate. The membrane has one or more openings that expose one or more portions of the first surface, and includes a thermopile. A sacrificial layer is deposited on the membrane and in the one or more openings. The sacrificial layer is patterned to expose a portion of the membrane associated with one or more hot junctions of the thermopile. A rigid, thermally-conductive layer is formed on the sacrificial layer and on the exposed portion of the membrane associated with the one or more hot junctions of the thermopile. An absorber is deposited on the rigid, thermally-conductive layer. A cavity is formed in the substrate from a second surface of the substrate to the membrane and the sacrificial layer is removed.

Abstract: A method for manufacturing an imaging device in a semiconductor substrate is disclosed. The substrate includes a first surface, a second surface substantially opposite the first surface, and a thickness defined by a distance between the first surface and the second surface. A trench is fabricated in the semiconductor substrate first surface. A passivation layer is applied over the substrate first surface and the trench, optionally filling the trench by depositing a conformal layer over the substrate first surface. The conformal layer and the passivation layer are planarized from the substrate first surface, and a membrane is fabricated on the substrate first surface. From the substrate second surface, a cavity is formed in the substrate abutting the membrane and at least a portion of the trench via the unmasked region.

Abstract: A method for manufacturing an imaging device is presented. The method starts with providing a wafer having a membrane with an opening bonded to a substrate. A photoresist layer is deposited over the membrane and wafer surface. A portion of the substrate back surface under a central part of the membrane is etched anisotropicly. A first region of the photoresist layer is removed, exposing an opening in the membrane, so that a first isotropic etching of the substrate is performed through the membrane opening. A second region of the photoresist layer is stripped, exposing a second membrane opening, providing access for a second isotropic etching of the substrate through the first and/or second membrane opening.

Abstract: A method of manufacturing a pixel structure having an umbrella absorber is disclosed. The method includes providing a substrate with a membrane on a first surface of the substrate. The membrane has one or more openings that expose one or more portions of the first surface, and includes a thermopile. A sacrificial layer is deposited on the membrane and in the one or more openings. The sacrificial layer is patterned to expose a portion of the membrane associated with one or more hot junctions of the thermopile. A rigid, thermally-conductive layer is formed on the sacrificial layer and on the exposed portion of the membrane associated with the one or more hot junctions of the thermopile. An absorber is deposited on the rigid, thermally-conductive layer. A cavity is formed in the substrate from a second surface of the substrate to the membrane and the sacrificial layer is removed.

Abstract: A vertically stacked thermopile and an IR sensor using said stacked thermopiles are provided. The vertically stacked thermopile may include multiple thermocouples stacked vertically on one another. The thermocouples may be connected in series, parallel, or a combination of series and parallel. One or more vertically stacked thermopiles may be included in an IR sensor and the thermopiles may be connected in series, parallel, or a combination of series and parallel.

Abstract: Graphene-based thermopiles are provided. The graphene-based thermopiles may include thermocouples having one or more graphene strips that may be polarized to adjust their Seebeck coefficients. The polarized graphene strips may have larger Seebeck coefficients than the materials conventionally used in thermopile devices. As a result, the graphene-based thermopiles may generate large output voltages using fewer thermocouples than conventional thermopile devices.

Abstract: A thermopile sensor array is provided. The thermopile sensor array may include multiple pixels formed by multiple thermopiles arranged on a single common shared support membrane. A separation between the edge of the shared support membrane and the outermost thermopile(s) may be included to provide additional thermal isolation between the thermopile and an underlying silicon substrate.

Abstract: Graphene-based thermopiles are provided. The graphene-based thermopiles may include thermocouples having one or more graphene strips that may be polarized to adjust their Seebeck coefficients. The polarized graphene strips may have larger Seebeck coefficients than the materials conventionally used in thermopile devices. As a result, the graphene-based thermopiles may generate large output voltages using fewer thermocouples than conventional thermopile devices.

Abstract: A sensor for detecting electromagnetic radiation comprises a sensor element, a housing in which the sensor element is disposed, and a radiation inlet window provided in the housing and closed by a material transmissible for the radiation to be detected. The transmissible material is fixed to the housing by fixation means not disposed in the field of view of the sensor element.

Abstract: A thermopile sensor array is provided. The thermopile sensor array may include multiple pixels formed by multiple thermopiles arranged on a single common shared support membrane. A separation between the edge of the shared support membrane and the outermost thermopile(s) may be included to provide additional thermal isolation between the thermopile and an underlying silicon substrate.

Abstract: A sensor element for detecting electromagnetic radiation, particularly in the infrared range, comprises one or more heat-sensitive portions provided on a substrate and one or more influencing layers for influencing the absorption and/or reflection of the electromagnetic radiation to be detected. The heat-sensitive portion(s) and/or the influencing layers are arranged on the substrate in accordance with the thermal properties of the influencing layers, preferably asymmetrically.